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GBPC35005(W) thru 3510(W)
FEATURES
Rating to 1000V PRV
High efficiency
Glass passivated chip junction
Electrically isolated metal case for maximum heat
dissipation
The plastic material has UL flammability classification
94V-0
UL Recognition File # E95060
MECHANICAL DATA
Case : Molded plastic with Heatsink internally mounted
in the bridge encapsulation
Polarity : As marked on Body
Mounting : Hole for # 10 screw
Weight : 0.63 ounces , 18.0 grams (terminal)
: 0.51 ounces , 14.5 grams (wire)
GBPC
3510/W
1000
700
1000
GBPC
3508/W
800
560
800
GBPC
3506/W
600
420
600
GBPC
3504/W
400
280
400
GBPC
3502/W
200
140
200
GBPC
35005/W
50
35
50
GBPC
3501/W
100
70
100
NOTES : 1.Measured at non-repetitive, for greater than 1ms and less than 8.3ms
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Device mounted on 300mm x 300mm x 1.6mm Cu Plate Heatsink.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 17.5A DC
35.0
400
1.1
T
J
Operating Temperature Range
-55 to +150
C
T
STG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 3, see Fig.1)
R
0JC
5.0
C/W
C
J
Typical Junction Capacitance
per element (Note 2)
150
pF
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C 5.0
500
uA
V
A
A
V
UNIT
V
V
660
A S
2
I t
2
I t Rating for fusing (t < 8.3ms), (Note 1)
2
CHARACTERISTICS SYMBOL
@T
C
= Ta
GLASS PASSIVATED BRIDGE RECTIFIERS
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 35
Amperes
(Wire)
GBPC-W
D
A
D
E
F
B
C
D
D
N
GBPC/GBPC-W
All Dimensions in millimeter
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
31.80
8.00
7.40
28.30 28.80
18.6017.60
10.90 11.90
17.60 18.60
16.10
14.80
M
L
K
J
I17.10
13.80
17.1016.10
0.76 0.86
6.30
0.97 1.07
5.59 5.08
HOLE FOR NO. 10 SCREW
N
21.3018.80
6.50
C
G
H
B
L
K
J
I
M
N
GBPC
(Terminal)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
SEMICONDUCTOR
LITE-ON
REV. 4, Sep-2010, KBDH03
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