UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R206-019,A
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
*This device is for use as a medium power amplifier and
switch requiring collector currents up to 500mA. Sourced
from Process 19.
MARKING
1
2
3
SOT-23
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO 75 V
Collector-emitter voltage VCEO 40 V
Emitter-base voltage VEBO 6 V
Collector current Ic 1 A
Collector dissipation Pc 625 mW
Junction Temperature Tj 150
°C
Storage Temperature TSTG -55 ~ +150 °C
Note: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-base breakdown voltage V(BR)CBO Ic=10µA, IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO Ic=10mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10µA, Ic=0 6 V
Collector cutoff current ICEX VCE=60V,VEB(OFF)=3.0V 10 nA
Collector cutoff current ICBO VCB=60V,IE=0
VCB=60V,IE=0, TA=150°C
0.01
10
µA
µA
Emitter cutoff current IEBO VEB=3.0V,IC=0 10 nA
Base cutoff current IBL VCE=60V, VEB(OFF)=3.0V 20 nA
1P
UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R206-019,A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
ON CHARACTERISTICS
DC current gain hFE
Ic=0.1mA, VCE=10V
Ic=1.0mA, VCE=10V
Ic=10mA, VCE=10V
Ic=10mA, VCE=10V, TA=-55°C
Ic=150mA, VCE=10V*
Ic=150mA, VCE=1.0V*
Ic=500mA, VCE=10V*
35
50
75
35
100
50
40
300
Collector-emitter saturation voltage* VCE(sat) Ic=150mA, IB=15mA
Ic=500mA, IB=50mA
0.3
1.0
V
V
Base-emitter saturation voltage* VBE(sat) Ic=150mA, IB=15mA
Ic=500mA, IB=50mA
0.6 1.2
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
Current gain-Bandwidth product fT Ic=20mA, VCE=20V, f=100MHz 300 MHz
Output capacitance Cobo VCB=10V, IE=0, f=100kHz 8.0 pF
Input capacitance Cibo VEB=0.5V, IC=0, f=100kHz 25 pF
Collector base time constant rb'Cc IC=20mA, VCB=20V, f=31.8MHz 150 pS
Noise figure NF IC=100µA, VCE=10V, Rs=1.0kΩ,
f=1.0kHz
4.0 dB
Real part of common-emitter high
frequency input impedance
Re(hje) IC=20mA, VCB=20V, f=300MHz 60 Ω
SWITCHING CHARACTERISTICS
Delay time td Vcc=30V, VBE(OFF)=0.5V, 10 ns
Rise time tr IC=150mA, IB1=15mA 25 ns
Storage time ts Vcc=30V, IC=150mA, 225 ns
Fall time tf IB1= IB2=15mA 60 ns
THERMAL CHARACTERISTICS (TA=25°
°°
°C, unless otherwise noted)
Total Device Dissipation
Derate above 25°C
PD 350
2.8
mW
mW/°C
Thermal resistance, junction to
Ambient
RθJA 357
°C/W
*Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 3
QW-R206-019,A
TEST CIRCUITS
FIG.1 Saturated Turn-On Switching Time FIG.2 Saturated Turn-Off Switching Time
TYPICAL CHARACTERISTICS
UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 4
QW-R206-019,A
