UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 75 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current Ic 1 A Collector dissipation Pc 625 mW C Junction Temperature Tj 150 C Storage Temperature TSTG -55 ~ +150 Note: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector cutoff current V(BR)CBO V(BR)CEO V(BR)EBO ICEX ICBO 75 40 6 Emitter cutoff current Base cutoff current IEBO IBL Ic=10A, IE=0 Ic=10mA, IB=0 IE=10A, Ic=0 VCE=60V,VEB(OFF)=3.0V VCB=60V,IE=0 VCB=60V,IE=0, TA=150C VEB=3.0V,IC=0 VCE=60V, VEB(OFF)=3.0V UTC UNISONIC TECHNOLOGIES TYP MAX UNIT 10 0.01 10 10 20 V V V nA A A nA nA CO., LTD. 1 QW-R206-019,A UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR PARAMETER ON CHARACTERISTICS DC current gain SYMBOL TEST CONDITIONS MIN hFE Ic=0.1mA, VCE=10V Ic=1.0mA, VCE=10V Ic=10mA, VCE=10V Ic=10mA, VCE=10V, TA=-55C Ic=150mA, VCE=10V* Ic=150mA, VCE=1.0V* Ic=500mA, VCE=10V* Ic=150mA, IB=15mA Ic=500mA, IB=50mA Ic=150mA, IB=15mA Ic=500mA, IB=50mA 35 50 75 35 100 50 40 Ic=20mA, VCE=20V, f=100MHz VCB=10V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz IC=20mA, VCB=20V, f=31.8MHz IC=100A, VCE=10V, Rs=1.0k, f=1.0kHz IC=20mA, VCB=20V, f=300MHz 300 Collector-emitter saturation voltage* VCE(sat) Base-emitter saturation voltage* VBE(sat) SMALL SIGNAL CHARACTERISTICS Current gain-Bandwidth product Output capacitance Input capacitance Collector base time constant Noise figure fT Cobo Cibo rb'Cc NF Real part of common-emitter high Re(hje) frequency input impedance SWITCHING CHARACTERISTICS Delay time td Vcc=30V, VBE(OFF)=0.5V, Rise time tr IC=150mA, IB1=15mA Storage time ts Vcc=30V, IC=150mA, Fall time tf IB1= IB2=15mA THERMAL CHARACTERISTICS (TA=25C, unless otherwise noted) Total Device Dissipation PD Derate above 25C Thermal resistance, junction to RJA Ambient *Pulse test: Pulse Width 300s, Duty Cycle 2.0% UTC UNISONIC TECHNOLOGIES 0.6 TYP MAX UNIT 300 0.3 1.0 1.2 2.0 V V V V 8.0 25 150 4.0 MHz pF pF pS dB 60 10 25 225 60 ns ns ns ns 350 2.8 357 mW mW/C C/W CO., LTD. 2 QW-R206-019,A UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR TEST CIRCUITS FIG.1 Saturated Turn-On Switching Time FIG.2 Saturated Turn-Off Switching Time TYPICAL CHARACTERISTICS UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R206-019,A UTC MMBT2222A UTC NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R206-019,A