PAGE . 1STAD-JUL.26.2007
2N7002W
60V N-Channel Enhancement Mode MOSFET
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
RETEMARAPlobmyStimiLstinU
egatloVecruoS-niarD V
SD
06V
egatloVecruoS-etaG V
SG
+ 02V
tnerruCniarDsuounitnoC I
D
511Am
tnerruCniarDdesluP
)1
I
MD
008Am
noitapissiDrewoPmumixaM T
A
52=
O
C
T
A
57=
O
CP
D
002
021 Wm
egnaRerutarepmeTegarotSdnanoitcnuJgnitarepO T
J
T,
GTS
051+ot55-
O
C
)detnuomBCP(ecnatsiseRlamrehTtneibmAot-noitcnuJ
2
R
θAJ
526
O
W/C
MECHANICAL DATA
• Case: SOT -323 Pack age
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight: 0.0002 ounces, 0.005 grams
• Marking : 72W
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=5Ω
• RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
SOT-323
Unit inch(mm)：
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.004(0.10)MAX.
0.004(0.10)MIN.
0.087(2.20)
0.078(2.00)
0.006(0.15)
0.002(0.05)
0.016(0.40)
0.008(0.20)
0.044(1.10)
0.035(0.90)
Gate
Drain
Source
PAGE . 2STAD-JUL.26.2007
2N7002W
ELECTRICAL CHARACTERISTICS
V
DD
V
OUT
V
IN
R
G
R
L
Switching
Test Circuit
Gate Charge
Test Circuit
V
DD
V
GS
R
G
R
L
1mA
retemaraPlobmySnoitidnoCtseT.niM.pyT.xaMstinU
citatS
egatloVnwodkaerBecruoS-niarDVB
SSD
V
SG
I,V0=
D
Au01=06--V
egatloVdlohserhTetaGV
)ht(SG
V
SD
V=
SG
I,
D
Au052=1-5.2V
ecnatsiseRetatS-nOecruoS-niarDR
)no(SD
V
SG
I,V5.4=
D
Am57=--5.7
Ω
ecnatsiseRetatS-nOecruoS-niarDR
)no(SD
V
SG
I,V01=
D
Am005=--5
tnerruCniarDegatloVetaGoreZI
SSD
V
SD
V,V06=
SG
V0=--1Au
egakaeLydoBetaGI
SSG
V
SG
=+ V,V02
SD
V0=--+001An
ecnatcudnocsnarTdrawroFg
Sf
V
SD
I,V51=
D
Am052=002--Sm
cimanyD
egrahCetaGlatoTQ
g
V
SD
I,V51=
D
Am005=
V
SG
V5.4=
-6.07.0
CnegrahCecruoS-etaGQ
sg
-1.0-
egrahCniarD-etaGQ
dg
-80.0-
emiTyaleDnO-nruTt
no
V
DD
R,V01=
L
02= Ω
I
D
V,Am005=
NEG
V01=
R
G
01= Ω
-951
sn
emiTyaleDffO-nruTt
ffo
-1262
ecnaticapaCtupnIC
ssi
V
SD
V,V52=
SG
V0=
HM0.1=f
Z
--05
FpecnaticapaCtuptuOC
sso
--52
ecnaticapaCrefsnarTesreveRC
ssr
--5
edoiDniarD-ecruoS
tnerruCdrawroFedoiD.xaMI
s
---052Am
egatloVdrawroFedoiDV
DS
I
S
V,Am052=
SG
V0=-39.02.1V
PAGE . 3STAD-JUL.26.2007
2N7002W
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
FIG.2- Transfer Characteristic
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
012345
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain-to-Source Current (A)
V = 10V ~ 6.0VGS
4.0V
3.0V
5.0V
0
0.2
0.4
0.6
0.8
1
1.2
0123456
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Source Current (A)
V =10V
DS
V =10V
DS
V =10V
DS
T =25 C
JO
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
R
DS(ON)
- On-Resistance(Normalized)
V =10V
I =500mA
GS
D
0
2
4
6
8
10
2345678910
V
GS
- Gate-to-Source Voltage (V)
I =500mAD
T =125 C
JO
T =25 C
JO
R - On-Resistance ( )
DS(ON)
W
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2
I
D
- Drain Current (A)
V =10V
GS
V =4.5V
GS
R - On-Resistance ( )
DS(ON)
W
PAGE . 4STAD-JUL.26.2007
2N7002W
Fig.6 - Gate Charge Waveform
Fig.8 - Threshold Voltage vs Temperature
Fig.7 - Gate Charge
Fig.9 - Breakdown Voltage vs Junction Temperature
Fig.10 - Source-Drain Diode Forward Voltage
QgdQgs Qg
Qsw
Vgs(th)
Vgs
Qg
Qg(th)
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
V =0V
GS
T =125 C
J
O
T =25 C
J
O
T =-55 C
J
O
0.6
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
V
th
- G-S Threshold Voltage (NORMALIZED)
I =250uA
D
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
Q
g
-GateCharge(nC)
V
GS
- Gate-to-Source Voltage (V)
V =15V
I =500mA
DS
D
64
65
66
67
68
69
70
71
72
73
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
BV
DSS
- Breakdown Voltage (V)
I =250uA
D
MOUNTING P AD LA YOUT
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMA TION
LEGAL ST ATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
2N7002W
STAD-JUL.26.2007 PAGE . 5
SOT-323
0.026
(0.66)
0.073
(1.85)
0.034
(0.86)
0.026
(0.65)
0.026
(0.65)
Unit inch(mm)：
PAGE . 6
For example :
RB500V-40_R2_00001
Part No. Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing C od e XX Ver si on Code XXXXX
Packing
type 1
st
Code Packing
size cod e 2
nd
Code HF or RoHS 1
st
Code 2
nd
~5
th
Code
T/B AN/A 0HF 0 s e r ial n umber
T/R R7" 1RoHS 1 s e r ial n umber
B/P B13" 2
T/P T26mm X
TRR S52mm Y
TRL LPBCU U
FORMING FPBCD D
Part No_pa cking code _Version
2N7002W_R1_00001
2N7002W_R2_00001
2N7002W
STAD-JUL.26.2007
