2N7002W 60V N-Channel Enhancement Mode MOSFET SOT-323 Unitinch(mm) 0.004(0.10)MIN. * RDS(ON), VGS@10V,IDS@500mA=5 * RDS(ON), VGS@4.5V,IDS@75mA=7.5 0.087(2.20) 0.070(1.80) * Advanced Trench Process Technology 0.087(2.20) 0.078(2.00) FEATURES * High Density Cell Design For Ultra Low On-Resistance * Specially Designed for Battery Operated Systems, Solid-State Relays 0.054(1.35) 0.045(1.15) Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.006(0.15) 0.002(0.05) 0.056(1.40) 0.047(1.20) * Lead free in comply with EU RoHS 2002/95/EC directives. * Green molding compound as per IEC61249 Std. . (Halogen Free) 0.044(1.10) 0.035(0.90) 0.004(0.10)MAX. MECHANICALDATA * Case: SOT-323 Package 0.016(0.40) 0.008(0.20) * Terminals : Solderable per MIL-STD-750,Method 2026 Drain * Apporx. Weight: 0.0002 ounces, 0.005 grams * Marking : 72W Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e VD S 60 V G a t e - S o ur c e Vo l t a g e VGS +20 V ID 11 5 mA ID M 800 mA PD 200 120 mW TJ , TS T G -5 5 to + 1 5 0 RJ A 625 C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Juncti on-to Ambi ent Thermal Resi stance(PC B mounted)2 TA = 2 5 C TA = 7 5 O C O O O C C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec STAD-JUL.26.2007 PAGE . 1 2N7002W ELECTRICALCHARACTERISTICS P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo l t a g e BVD SS V G S = 0 V , ID = 1 0 u A 60 - - V G a t e Thr e s ho l d Vo l t a g e V G S (th) V D S = V G S , ID = 2 5 0 u A 1 - 2 .5 V D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e RD S (o n) VG S =4.5V, I D =75mA - - 7 .5 D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e RD S (o n) VG S =10V, I D =500mA - - 5 Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S VD S =60V, VG S =0V - - 1 uA Gate Body Leakage IG S S V G S =+ 2 0 V , V D S = 0 V - - +100 nA Forward Transconductance g fS V D S = 1 5 V , ID = 2 5 0 m A 200 - - mS - 0 .6 0 .7 - 0 .1 - - 0 .0 8 - - 9 15 - 21 26 - - 50 - - 25 - - 5 S ta ti c Dynamic To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e Qg s G a t e - D r a i n C ha r g e Qg d Tu r n - O n D e l a y Ti m e to n Tu r n - O f f D e l a y Ti m e to ff In p u t C a p a c i t a n c e Ciss O ut p ut C a p a c i t a nc e Coss R e v e r s e Tr a n s f e r C a p a c i t a n c e C rs s V D S = 1 5 V , ID = 5 0 0 m A VG S =4.5V VD D =10V , RL =20 ID =500mA , VG E N =10V RG =10 V D S =2 5 V, V G S =0 V f=1 .0 MHZ nC ns pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is - - - 250 mA VSD IS = 2 5 0 m A , V G S = 0 V - 0 .9 3 1 .2 V V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG STAD-JUL.26.2007 PAGE . 2 2N7002W O 1.2 5.0V V GS = 10V ~ 6.0V ID - Drain-to-Source Current (A) I D - Drain Source Current (A) Typical Characteristics Curves (TA=25 C,unless otherwise noted) 1 4.0V 0.8 0.6 0.4 3.0V 0.2 0 0 1 2 3 4 1.2 V DS=10V 1 0.8 0.6 0.4 T J=25 OC 0.2 0 5 0 1 VDS - Drain-to-Source Voltage (V) 10 R DS(ON) - On-Resistance ( W ) R DS(ON) - On-Resistance ( W ) 4 3 V GS=4.5V 2 V GS=10V 1 0 5 6 I D=500mA 8 6 T J=125 OC 4 2 T J=25 OC 0 0 0.2 0.4 0.6 0.8 1 1.2 2 3 4 5 6 7 8 9 10 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) FIG.3- On Resistance vs Drain Current RDS(ON) - On-Resistance(Normalized) 4 FIG.2- Transfer Characteristic 5 1.8 3 VGS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic 2 2 FIG.4- On Resistance vs Gate to Source Voltage V GS=10V I D=500mA 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature STAD-JUL.26.2007 PAGE . 3 Vgs V GS - Gate-to-Source Voltage (V) 2N7002W Qg Qsw Vgs(th) 10 V DS=15V I D=500mA 8 6 4 2 0 0 Qg(th) Qgs Qg Qgd I D=250uA 1.1 1 0.9 0.8 0.7 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) IS - Source Current (A) 0.8 1 73 72 I D=250uA 71 70 69 68 67 66 65 64 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) Fig.8 - Threshold Voltage vs Temperature 10 0.6 Fig.7 - Gate Charge BVDSS - Breakdown Voltage (V) Vth - G-S Threshold Voltage (NORMALIZED) 1.2 0.4 Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform 0.6 -50 0.2 Fig.9 - Breakdown Voltage vs Junction Temperature V GS=0V 1 T J=25 OC T J=125 OC 0.1 T J=-55 OC 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage STAD-JUL.26.2007 PAGE . 4 2N7002W MOUNTING PAD LAYOUT SOT-323 Unitinch(mm) 0.073 (1.85) 0.034 (0.86) 0.026 (0.66) 0.026 (0.65) 0.026 (0.65) ORDER INFORMATION * Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2012 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUL.26.2007 PAGE . 5 2N7002W For example : RB500V-40_R2_00001 Serial number Part No. Version code means HF Packing size code means 13" Packing type means T/R Packing Code XX Version Code XXXXX Packing type 1st Code Packing 2nd Code size code T/B A N/A 0 HF 0 serial number T/R R 7" 1 RoHS 1 serial number B/P B 13" 2 T/P T 26mm X TRR S 52mm Y TRL L PBCU U FORMING F PBCD D HF or RoHS 1st Code 2nd~5th Code Part No_packing code_Version 2N7002W_R1_00001 2N7002W_R2_00001 STAD-JUL.26.2007 PAGE . 6