Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. RFP70N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 70A, 14 m * 70A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440. Ordering Information PART NUMBER RFP70N06 PACKAGE TO-220AB * rDS(on) = 0.014 * Temperature Compensated PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve (Single Pulse) * 175oC Operating Temperature * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol BRAND D RFP70N06 G S NOTE: When ordering use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A. Packaging JEDEC TO-220AB DRAIN (FLANGE) (c)2005 Fairchild Semiconductor Corporation SOURCE DRAIN GATE RFP70N06 Rev. D1 RFP70N06 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg RFP70N06 60 60 70 Refer to Peak Current Curve 20 Refer to UIS Curve 150 1.0 -55 to 175 UNITS V V A 300 260 oC oC V A W W/oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS V Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V (Figure 11) 60 - - Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A (Figure 10) 2 - 4 V VDS = 60V, VGS = 0V - - 1 A VDS = 0.8 x Rated BVDSS, TC = 150oC - - 25 A VGS = 20V - - 100 nA ID = 70A, VGS = 10V (Figure 9) - - 0.014 VDD = 30V, ID 70A, RL = 0.43, VGS = 10V, RGS = 2.5 (Figure 13) - - 190 ns - 10 - ns tr - 137 - ns td(OFF) - 32 - ns tf - 24 - ns t(OFF) - - 73 ns - 120 156 nC - 65 85 nC - 5.0 6.5 nC - 2250 - pF - 792 - pF - 206 - pF Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) rDS(ON) Turn-On Time t(ON) Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Qg(TOT) VGS = 0V to 20V Gate Charge at 10V Qg(10) VGS = 0V to 10V Threshold Gate Charge Qg(TH) VGS = 0V to 2V Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Thermal Resistance, Junction to Case RJC Thermal Resistance, Junction to Ambient RJA VDD = 48V, ID = 70A, RL = 0.68 Ig(REF) = 2.2mA (Figure 13) VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) - - 1.0 oC/W TO-220 - - 62 oC/W - - - - - MIN TYP MAX UNITS ISD = 70A - 1.5 V ISD = 70A, dISD/dt = 100A/s - 52 ns Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage SYMBOL VSD Reverse Recovery Time trr TEST CONDITIONS NOTES: 2. Pulse test: pulse width 300ms, duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current Capability Curve (Figure 5). (c)2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1 RFP70N06 Typical Performance Curves TC = 25oC, Unless Otherwise Specified 80 70 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 60 50 40 30 20 10 0 25 0 0 25 150 50 75 100 125 TC , CASE TEMPERATURE (oC) 175 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 THERMAL IMPEDANCE Z JC, NORMALIZED 0.5 0.2 0.1 PDM 0.1 0.05 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z JC x R JC + TC 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 1000 100s 100 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10 10ms TC = 25oC TJ = MAX RATED SINGLE PULSE 1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA (c)2005 Fairchild Semiconductor Corporation 100 IDM, PEAK CURRENT (A) ID, DRAIN CURRENT (A) 500 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - T C I = I25 ---------------------- 150 VGS = 10V 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 50 10-5 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 FIGURE 5. PEAK CURRENT CAPABILITY RFP70N06 Rev. D1 RFP70N06 IAS, AVALANCHE CURRENT (A) 300 TC = 25oC, Unless Otherwise Specified (Continued) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R)/(1.3*RATED BVDSS-VDD) +1] 100 STARTING TJ = 25oC STARTING TJ = 150oC 200 VGS = 10V VGS = 20V ID, DRAIN CURRENT (A) Typical Performance Curves VGS = 8V VGS = 7V 160 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC 120 80 VGS = 6V 40 VGS = 5V VGS = 4.5V 10 0.01 1 0.1 tAV, TIME IN AVALANCHE (ms) 0 10 4 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 5 NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. 200 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V 160 2.5 -55oC 25oC 175oC 120 80 40 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 1.5 1 0.5 0 -80 10 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.0 0.5 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE (c)2005 Fairchild Semiconductor Corporation 40 80 120 160 200 2.0 1.5 -40 0 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE VGS = VDS, ID = 250A 0 -80 -40 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. TRANSFER CHARACTERISTICS 2.0 PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 70A 2 0 0 NORMALIZED GATE THRESHOLD VOLTAGE FIGURE 7. SATURATION CHARACTERISTICS NORMALIZED DRAIN TO SOURCE ON RESISTANCE IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY ID = 250A 1.5 1.0 0.5 0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE RFP70N06 Rev. D1 RFP70N06 Typical Performance Curves TC = 25oC, Unless Otherwise Specified (Continued) 60 C, CAPACITANCE (pF) 4000 CISS 3000 2000 COSS 1000 CRSS 0 0 10 VDD = BVDSS VDD = BVDSS 45 7.5 RL = 0.86 IG(REF) = 2.2mA VGS = 10V 30 5 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 15 2.5 0 0 I 20 G(REF) IG(ACT) 25 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS VDS, DRAIN TO SOURCE VOLTAGE (V) 5000 t, TIME (s) I 80 G(REF) IG(ACT) NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN REQUIRED PEAK IAS + RG VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) VDS td(OFF) tr VDS tf 90% 90% RL VGS + DUT RGS VGS - VDD 90% VGS 0 FIGURE 16. SWITCHING TIME TEST CIRCUIT (c)2005 Fairchild Semiconductor Corporation 10% 10% 0 10% 50% 50% PULSE WIDTH FIGURE 17. SWITCHING WAVEFORMS RFP70N06 Rev. D1 RFP70N06 Test Circuits and Waveforms (Continued) VDS VDD RL Qg(TOT) VDS VGS = 20V VGS Qg(10) + VDD DUT Ig(REF) VGS = 10V VGS - VGS = 2V 0 Qg(TH) Ig(REF) 0 FIGURE 18. GATE CHARGE TEST CIRCUIT (c)2005 Fairchild Semiconductor Corporation FIGURE 19. GATE CHARGE WAVEFORM RFP70N06 Rev. D1 RFP70N06 PSPICE Electrical Model .SUBCKT RFG70N06 2 1 3 ; rev 3/20/92 CA 12 8 5.56e-9 CB 15 14 5.30e-9 CIN 6 8 2.63e-9 RLDRAIN DPLCAP 10 LDRAIN DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD RSCL2 5 51 RLGATE 9 20 + LDRAIN 2 5 1e-9 LGATE 1 9 3.10e-9 LSOURCE 3 7 1.82e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 4.66e-3 RLDRAIN 2 5 10 RGATE 9 20 1.21 RLGATE 1 9 31 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 3.92e-3 RLSOURCE 3 7 18.2 RVTO 18 19 RVTOMOD 1 18 8 ESCL 16 - LGATE 11 RDRAIN EVTO RGATE S1A S1B S2A S2B 6 8 + GATE 1 VTO + 21 6 DBODY + EBREAK 17 18 - MOS2 MOS1 RIN CIN RLSOURCE 8 S1A 12 DBREAK 50 ESG 2 DRAIN RSCL1 + 51 EBREAK 11 7 17 18 65.18 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 5 RSOURCE 7 3 SOURCE LSOURCE S2A 13 8 S1B RBREAK 15 14 13 17 18 S2B 13 CA RVTO CB + 6 8 EGS - 14 + EDS - 5 8 IT 19 VBAT + 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.605 .MODEL DBDMOD D (IS = 7.91e-12 RS = 3.87e-3 TRS1 = 2.71e-3 TRS2 = 2.50e-7 CJO = 4.84e-9 TT = 4.51e-8) .MODEL DBKMOD D (RS = 3.9e-2 TRS1 =1.05e-4 TRS2 = 3.11e-5) .MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 3.46 KP = 47 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 8.46e-4 TC2 = -8.48e-7) .MODEL RDSMOD RES (TC1 = 2.23e-3 TC2 = 6.56e-6) .MODEL RVTOMOD RES (TC1 = -3.29e-3 TC2 = 3.49e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8.35 VOFF= -6.35) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.35 VOFF= -8.35) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 3.0) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.0 VOFF= -2.0) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. (c)2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1 RFP70N06 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-LockTM F-PFSTM AccuPowerTM (R) FRFET(R) AX-CAP(R)* (R)* (R) SM BitSiCTM Global Power Resource PowerTrench GreenBridgeTM PowerXSTM Build it NowTM TinyBoost(R) Green FPSTM Programmable Active DroopTM CorePLUSTM TinyBuck(R) (R) Green FPSTM e-SeriesTM QFET CorePOWERTM TinyCalcTM QSTM GmaxTM CROSSVOLTTM TinyLogic(R) GTOTM Quiet SeriesTM CTLTM TINYOPTOTM IntelliMAXTM RapidConfigureTM Current Transfer LogicTM TinyPowerTM ISOPLANARTM DEUXPEED(R) TM TinyPWMTM Dual CoolTM Marking Small Speakers Sound Louder TinyWireTM EcoSPARK(R) Saving our world, 1mW/W/kW at a timeTM and BetterTM TranSiCTM EfficentMaxTM SignalWiseTM MegaBuckTM TriFault DetectTM ESBCTM SmartMaxTM MICROCOUPLERTM TRUECURRENT(R)* SMART STARTTM MicroFETTM (R) SerDesTM Solutions for Your SuccessTM MicroPakTM SPM(R) MicroPak2TM Fairchild(R) (R) STEALTHTM MillerDriveTM Fairchild Semiconductor UHC(R) SuperFET(R) MotionMaxTM FACT Quiet SeriesTM (R) Ultra FRFETTM (R) SuperSOTTM-3 mWSaver FACT UniFETTM SuperSOTTM-6 OptoHiTTM FAST(R) (R) VCXTM SuperSOTTM-8 OPTOLOGIC FastvCoreTM (R) (R) VisualMaxTM OPTOPLANAR SupreMOS FETBenchTM VoltagePlusTM SyncFETTM FPSTM XSTM tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com (c) Semiconductor Components Industries, LLC N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com