MITSUBISHI <MOSFET MODULE>
FM200TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
Mar. 2013
FM200TU-2A
APPLICATION
AC motor control of forklift (battery power source), UPS
●ID(rms) ..........................................................100A
● VDSS .............................................................100V
● Insulated Type
●6-elements in a pack
●Thermistor inside
●UL Recognized
File No.E323585
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
7
12
1
6
13
14
25
4
W
UV
NP
14
(SCREWING DEPTH)
Tc measured point
P
N
(7)G
U
P
(1)S
U
P
(10)G
U
N
UVW
(13)
(14)
(4)S
U
N
(8)G
V
P
(1)S
U
P
(7)G
U
P
(13)TH1
(2)S
V
P
(8)G
V
P
(3)S
W
P
(9)G
W
P
(4)S
U
N
(10)G
U
N
(5)S
V
N
(11)G
V
N
(6)S
W
N
A
B
(12)G
W
N
(14)TH2
(2)S
V
P
(11)G
V
N
(5)S
V
N
(9)G
W
P
(3)S
W
P
(12)G
W
N
(6)S
W
N
CIRCUIT DIAGRAM
6.5
(15.8)
3
9.2
(8.7)
7 7
30
36
10
70.9
15.2
30
36
10
3.96
3
38
5-6.5
202020
AB
14
110
97
±0.25
35
±1.0
＋1.0
−0.5
16.5 16 1632
6.5
(6)(6) 22.75
(17.5)
(14.5)
9.1
(6)
(14.5)
4
6.5
22.57
90
LABEL
80
75
67
±0.25
11.5
26
32 3216.5
1414
4-φ6.5
7-M6NUTS
MOUNTINGHOLES
Housing Type of A and B
(Tyco Electronics P/N:)
A: 917353-1
B: 179838-1
Mar. 2013
100
±20
100
200
100
100
200
410
560
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600
MITSUBISHI <MOSFET MODULE>
FM200TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
V
V
A
A
A
A
A
W
W
°C
°C
V
N • m
N • m
g
*1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).
*2: Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj max rating.
*3: TC’ measured point is just under the chips. If use this value, Rth(s-a) should be measured just under the chips.
*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5: TTH is thermistor temperature.
*6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K)
*7: TC measured point is shown in page OUTLINE DRAWING.
*8: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
G-S Short
D-S Short
TC’ = 137°C*3
Pulse*2
L = 10µH Pulse*2
Pulse*2
TC = 25°C
TC’ = 25°C*3
Main terminal to base plate, AC 1 min, f=60Hz, RMS
Main Terminal M6
Mounting to heat sink M6
Typical value
Unit
Rating
VDSS
VGSS
ID
IDM
IDA
IS*1
ISM*1
PD*4
PD*4
Tch
Tstg
Visol
—
—
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified.)
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise specified.)
ConditionsItem
Symbol
Min.
—
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mA
V
µA
mΩ
V
mΩ
nF
nC
ns
ns
µC
V
K/W
Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage
Internal lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance
VDS = VDSS, VGS = 0V
ID = 10mA, VDS = 10V
VGS = VGSS, VDS = 0V
ID = 100A
VGS = 15V
ID = 100A
VGS = 15V
ID = 100A
terminal-chip
VDS = 10V
VGS = 0V
VDD = 48V, ID = 100A, VGS = 15V
VDD = 48V, ID = 100A, VGS1 = VGS2 = 15V
RG = 13Ω, Inductive load switching operation
IS = 100A
IS = 100A, VGS = 0V
MOSFET part (1/6 module)*7
MOSFET part (1/6 module)*3
Case to fin, Thermal grease Applied*8 (1/6 module)
Case to fin, Thermal grease Applied*3, *8 (1/6 module)
Unit
Limits
IDSS
VGS(th)
IGSS
rDS(on)
(chip)
VDS(on)
(chip)
RDD'-SS'
Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf
trr*1
Qrr*1
VSD*1
Rth(j-c)
Rth(j-c’)
Rth(c-s)
Rth(c’-s’)
ConditionsItemSymbol Typ.
—
6
—
2.4
4.1
0.24
0.41
1.2
1.68
—
—
—
760
—
—
—
—
—
3.6
—
—
—
0.1
0.09
Max.
1
7.3
1.5
3.3
—
0.33
—
—
—
50
7
4
—
400
300
450
300
250
—
1.3
0.30
0.22
—
—
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj= 125°C
Tj = 25°C
Tj = 125°C
NTC THERMISTOR PART
Min.
—
—
Unit
Limits
ConditionsParameter
Symbol Typ.
100
4000
Max.
—
—
kΩ
K
Resistance
B Constant
TTH = 25°C*5
Resistance at TTH = 25°C, 50°C*5
R25*6
B*6
Mar. 2013
PERFORMANCE CURVES
MITSUBISHI <MOSFET MODULE>
FM200TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
00 0.2 0.4 0.6 0.8 1.0 0
150
100
50
200
5791113 15
0
0.4
0.8
1.2
1.6
2.0
048121620
0
2
1
3
4
5
6
0
3
4
1
2
5
6
7
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
–1
2
10
0
357 2
10
1
357 2
10
2
357
40
80
120
160
200 V
GS
= 20V
Tj = 25°C
Tj = 25°C
V
GS
= 12V
V
GS
= 15V
15V 12V
10V
9V
I
D
= 100A
I
D
= 100A
I
D
= 50A
I
D
= 200A
V
DS
= 10V
V
DS
= 10V
I
D
= 10mA
C
iss
C
oss
C
rss
V
GS
= 0V
TRANSFER CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE V
GS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. TEMPERATURE
(TYPICAL)
DRAIN-SOURCE
ON-STATE RESISTANCE r
DS(on)
(mΩ)
GATE THRESHOLD
VOLTAGE VS. TEMPERATURE
(TYPICAL)
GATE THRESHOLD VOLTAGE V
GS(th)
(V)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. GATE BIAS
(TYPICAL)
DRAIN-SOURCE
ON-STATE VOLTAGE V
DS(on)
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
CAPACITANCE (nF)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ChipChip
Chip
Chip
Tj = 25°C
T
j
= 125°C
JUNCTION TEMPERATURE T
j
(°C)
20
040 60 80 100 120 140 160
JUNCTION TEMPERATURE T
j
(°C)
20
040 60 80 100 120 140 160
Mar. 2013
MITSUBISHI <MOSFET MODULE>
FM200TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
0
4
8
12
16
20
0 200 400 600 800 12001000 0.5 0.6 0.7 0.8 0.9 1.0
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
23 57 10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
0
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
1
10
2
23 57 10
3
23 57
40 80 12020 60 100 140
0408012020 60 100 140
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
V
GS = 0V
VDD = 24V VDD = 48V
ID = 100A
Conditions:
VDD = 48V
VGS = ±15V
RG = 13Ω
Tj = 125°C
Inductive load
t
d(off)
Conditions:
VDD = 48V
VGS = ±15V
RG = 13Ω
Tj = 125°C
Inductive load
Eoff
Eon
E
rr
Conditions:
VDD = 48V
VGS = ±15V
ID = 100A
Tj = 125°C
Inductive load
Eoff
Eon
E
rr
td(on)
tf
tr
Conditions:
VDD = 48V
VGS = ±15V
ID = 100A
Tj = 125°C
Inductive load
t
d(off)
td(on)
tf
tr
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
GATE CHARGE Q
G
(nC)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE CURRENT I
S
(A)
SOURCE-DRAIN VOLTAGE V
SD
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME
(ns)
DRAIN CURRENT I
D
(A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME
(ns)
GATE RESISTANCE R
G
(Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING ENERGY
(mJ/pulse)
DRAIN CURRENT I
D
(A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING ENERGY
(mJ/pulse)
GATE RESISTANCE R
G
(Ω)
Chip
Tj = 25°C
T
j
= 125°C
Mar. 2013
MITSUBISHI <MOSFET MODULE>
FM200TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
100
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
101102
23 57 103
23 57 10–3
10–5 10–4
100
10–2
10–1
7
5
3
2
7
5
3
2
7
5
3
2
10–3
23 57 23 57 23 57 23 57
101
10–2 10–1 100
10–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
23 57 23 57
Conditions:
V
DD
= 48V
V
GS
= ±15V
R
G
= 13Ω
Tj = 25°C
Inductive load
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
I
rr
(A), t
rr
(ns)
SOURCE CURRENT IS (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j-c)
TIME (s)
Single pulse
Tj = 25°C
Per unit base = Rth(j-c) = 0.30K/W
13
71
12 6
14
W
UV
NP
(110)
(97)
90.6
57.6
24.6
91.6
58.6
25.6
48.4
29.6
(90)
(80)
(67)
TrUP
TrUN
TrVP
TrVN
Tr W P
TrWN
LABEL SIDE
CHIP LAYOUT
The company name and product names herein are the trademarks and registered trademarks of the respective companies.
<MOSFET MODULES >
HIGH POWER SWITCHING
USE INSULATED TYPE
© 2013 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
March-2013
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