BAR43/A/C/S — Schottky Diodes
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAR43/A/C/S Rev. C3 1
October 2009
BAR43/A/C/S
Schottky Diodes
Absolute Maximum Ratings* TA=25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics TA=25°C unless otherwise noted
Symbol Parameter Value Units
VRRM Maximum Repetitive Reverse Voltage 30 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non Repetitive Peak Forward Current
Pulse Width = 1.0 second 750 mA
TJOperating Junct ion Temperature 150 °C
TSTG Storage Temperature Range -55 to +150 °C
Symbol Parameter Value Units
PDPower Dissipation 290 mW
RθJA Thermal Resistance, Junction to Ambient 430 °C/W
Connection Diagram
MARKING
BAR43 D95 BAR43A DB1
BAR43C DB2 BAR43S DA5
SOT-23
BAR43/A/C/S — Schottky Diodes
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAR43/A/C/S Rev. C3 2
Electrical Characteristics TA=25°C unless otherwise noted
Typical Performance Characteristics
Symbol Parameter Test Conditions Min. Max. Units
VRBreakdown Vo ltage IR = 100μA30V
VFForward Voltage IF = 2.0mA
IF = 15mA
IF = 100mA
260 330
450
0.8
mV
mV
V
IRReverse Leakage VR = 25V
VR = 25V, TA=100°C0.5
100 μA
trr Reverse Recovery Time IF = IR = 100mA, IRR = 1.0mA
RL = 100Ω5.0 ns
Minimum Detection Recovery Time IF = IR = 100mA, IRR = 1.0mA, RL = 100Ω80%
Figure 1. Forward Voltage vs Temperature Figure 2. Reverse Leakage Current
vs Temperature
Figure 3. Capacitance vs Reverse Bias Voltage
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
10-6
10-5
10-4
10-3
10-2
10-1
100oC
75oC
25oC
-25oC
IF-Forward Curren t [A ]
VF-Forward Voltage [V]
0 5 10 15 20 25 30
10-5
10-4
10-3
10-2
10-1
100
100oC
75oC
125oC
-25oC
IR-Reverse Leakage Current [A]
VR-Reverse Voltage [V]
10-3
10-4
10-5
10-6
10-7
10-8
012345678910
2
4
6
8
10
12
14
16
Capacitance [pF]
VR-Reverse Voltage [V]
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I41
