TO-92 Plastic-Encapsulate Transistors QQ GW 18 2SA1300 TRANSISTOR(PNP) oa Q Oo } TO-92 | 1.EMITTER 4. | l : 2.COLLECTOR | 3.BASE | i 123 FEATURES Pcm; 0.75W (Tamb=25C) i tom: -2 A -20V Vierjceo: Junction temperature range -55C to + 150C Ts: 150 Tata: ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Collector-base breakdown voltage V(BRICBO Ic= -1 mA, le=0 -20 Vv Collector-emitter breakdown voltage V(BRICEO Ic= -10 mA, Is=0 -10 v Emitter-base breakdown voitage V(BR)EBO le= -1mA,Ic=O 6 Vv Collector cut-off current IcBo Vca= -20 V, le=0 0.1 LA Emitter cut-off current leso Ves= -6 V, Ic=0 -0.1 pA DC current gain hee Vce= -1 V, Ic=-0.5A 140 600 Collector-emitter saturation voltage VcEsat Ic= -2 A, Ip= -50 mA -0.5 Vv Base-emitter voltage Vee Vce= -1 V, Ic=-2A -1.5 Vv Vce= -1 V, Ilc= -0.5A Transition frequency fr 100 MHz f =30MHz Rank Y GR BL Range 140-280 200-400 300-600Typical Characteristics Ic - VCE COMMON EMITTER < Ta = 25C 2 4 z fe jar oS ~ o e& Oo oa od a oS oO Ip = -imA 0 0.8 -16 ~24 3.2 4.0 COLLECTOR-EMITTER VOLTAGE Vor (V) hFE - Ic COMMON EMITTER & 1 Veg = -1V Ta = 100C Z 35 < 3 fe _ 5 25 & a 5 1 oO So 5 ~0.01 +003 -01 -03 -1 ~8 10 COLLECTOR CURRENT I (A) SAFE OPERATING AREA -10 1 Tf rT 1 J f T Peypop y Ig MAX. (PULSED) XX 75 CTT x TOTTI N x Z ~1 MAX.cONTINUOUS) TT \ 205 XY NX oO < = NJ 100 msxX \ \ & ~1 - A | I A z, 3 % SINGLE NON: By REPETITIVE DC OPERATION 2p ~08 PULSE Ta = 25C \(Ta = 25C) & _94| <2 PULSE WIDTH 2 = 10 ms(Max.} o DUTY CYCLE = 30% 3 Ta = 25C NY 3 CURVES MUST BE DERATED 01) rINEARLY WITH INCREASE 008 IN TEMPERATURE Veo MAX. ~0.1 -0.3 -1 3 ~10- 30 COLLECTOR-EMITTER VOLTAGE VoRp (V) 2SA1300 Ic ~ VBE COMMON EMITTER VcE=-1V Ta = 100C COLLECTOR CURRENT Ic (A) 0 -0.4 ~0.8 -12 ~1.6 2.0 BASE-EMITTER VOLTAGE VapE (V) , VCEsat Ic COMMON EMITTER - Ic/Ip = 40 (Vv) Zz S 3 ~ a By mw KO _ E> Su Ta = 100C Bo ~ 4 BS 98 8 3 ~0.01 5 -0.01 -003 01 0.3 ~1 3 10 COLLETCOR CURRENT Ic (A) Pc Ta cw) COLLECTOR POWER DISSIPATION Po 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta (C) a 19