LP8550TLE/NOPB - NATIONAL SEMICONDUCTOR

1.35V DDR3L SDRAM UDIMM

MT9KSF12872AZ – 1GB

MT9KSF25672AZ – 2GB

Features

• DDR3L functionality and operations supported as

defined in the component data sheet

• 240-pin, unbuffered dual in-line memory module

(UDIMM)

• Fast data transfer rates: PC3-12800, PC3-10600,

PC3-8500, or PC3-6400

• 1GB (128 Meg x72), 2GB (256 Meg x 72)

• VDD = 1.35V (1.283–1.45V)

• VDD = 1.5V (1.425–1.575V)

• Backward compatible to VDD = 1.5V ±0.075V

• VDDSPD = 3.0–3.6V

• Supports ECC error detection and correction

• Nominal and dynamic on-die termination (ODT) for

data, strobe, and mask signals

• Single-rank

• On-board I2C temperature sensor with integrated

serial presence-detect (SPD) EEPROM

• Fixed burst chop (BC) of 4 and burst length (BL) of 8

via the mode register set (MRS)

• Selectable BC4 or BL8 on-the-fly (OTF)

• Gold edge contacts

• Halogen-free

• Fly-by topology

• Terminated control, command, and address bus

Figure 1: 240-Pin UDIMM (MO-269 R/C D)

Module height: 30.0mm (1.181in)

Options Marking

• Operating temperature

– Commercial (0°C ≤ TA ≤ +70°C) None

• Package

– 240-pin DIMM (halogen-free) Z

• Frequency/CAS latency

– 1.25ns @ CL = 11 (DDR3-1600) -1G6

– 1.5ns @ CL = 9 (DDR3-1333) -1G4

– 1.87ns @ CL = 7 (DDR3-1066) -1G1

Table 1: Key Timing Parameters

Speed

Grade

Industry

Nomenclature

Data Rate (MT/s) tRCD

(ns)

tRP

(ns)

tRC

(ns)CL = 11 CL = 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5

-1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125

-1G4 PC3-10600 – 1333 1333 1066 1066 800 667 13.125 13.125 49.125

-1G1 PC3-8500 – – – 1066 1066 800 667 13.125 13.125 50.625

-1G0 PC3-8500 – – – 1066 – 800 667 15 15 52.5

-80B PC3-6400 – – – – – 800 667 15 15 52.5

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

Features

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Products and specifications discussed herein are subject to change by Micron without notice.

Table 2: Addressing

Parameter 1GB 2GB

Refresh count 8K 8K

Row address 16K A[13:0] 32K A[14:0]

Device bank address 8 BA[2:0] 8 BA[2:0]

Device configuration 1Gb (128 Meg x 8) 2Gb (256 Meg x 8)

Column address 1K A[9:0] 1K A[9:0]

Module rank address 1 S#0 1 S#0

Table 3: Part Numbers and Timing Parameters – 1GB Modules

Base device: MT41K128M8,1 1Gb 1.35V DDR3L SDRAM

Part Number2

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Clock Cycles

(CL-tRCD-tRP)

MT9KSF12872AZ-1G6__ 1GB 128 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11

MT9KSF12872AZ-1G4__ 1GB 128 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9

MT9KSF12872AZ-1G1__ 1GB 128 Meg x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7

Table 4: Part Numbers and Timing Parameters – 2GB Modules

Base device: MT41K256M8,1 2Gb 1.35V DDR3L SDRAM

Part Number2

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Clock Cycles

(CL-tRCD-tRP)

MT9KSF25672AZ-1G6__ 2GB 256 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11

MT9KSF25672AZ-1G4__ 2GB 256 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9

MT9KSF25672AZ-1G1__ 2GB 256 Meg x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7

Notes: 1. The data sheet for the base device can be found on Micron’s Web site.

2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-

sult factory for current revision codes. Example: MT9KSF25672AZ-1G4K1.

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

Features

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Pin Assignments

Table 5: Pin Assignments

240-Pin DDR3 UDIMM Front 240-Pin DDR3 UDIMM Back

Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol

1 VREFDQ 31 DQ25 61 A2 91 DQ41 121 VSS 151 VSS 181 A1 211 VSS

2 VSS 32 VSS 62 VDD 92 VSS 122 DQ4 152 DM3 182 VDD 212 DM5

3 DQ0 33 DQS3# 63 NF 93 DQS5# 123 DQ5 153 NC 183 VDD 213 NC

4 DQ1 34 DQS3 64 NF 94 DQS5 124 VSS 154 VSS 184 CK0 214 VSS

5 VSS 35 VSS 65 VDD 95 VSS 125 DM0 155 DQ30 185 CK0# 215 DQ46

6 DQS0# 36 DQ26 66 VDD 96 DQ42 126 NC 156 DQ31 186 VDD 216 DQ47

7 DQS0 37 DQ27 67 VREFCA 97 DQ43 127 VSS 157 VSS 187 EVENT# 217 VSS

8 VSS 38 VSS 68 NC 98 VSS 128 DQ6 158 CB4 188 A0 218 DQ52

9 DQ2 39 CB0 69 VDD 99 DQ48 129 DQ7 159 CB5 189 VDD 219 DQ53

10 DQ3 40 CB1 70 A10 100 DQ49 130 VSS 160 VSS 190 BA1 220 VSS

11 VSS 41 VSS 71 BA0 101 VSS 131 DQ12 161 DM8 191 VDD 221 DM6

12 DQ8 42 DQS8# 72 VDD 102 DQS6# 132 DQ13 162 NC 192 RAS# 222 NC

13 DQ9 43 DQS8 73 WE# 103 DQS6 133 VSS 163 VSS 193 S0# 223 VSS

14 VSS 44 VSS 74 CAS# 104 VSS 134 DM1 164 CB6 194 VDD 224 DQ54

15 DQS1# 45 CB2 75 VDD 105 DQ50 135 NC 165 CB7 195 ODT0 225 DQ55

16 DQS1 46 CB3 76 NC 106 DQ51 136 VSS 166 VSS 196 A13 226 VSS

17 VSS 47 VSS 77 NC 107 VSS 137 DQ14 167 NU 197 VDD 227 DQ60

18 DQ10 48 NC 78 VDD 108 DQ56 138 DQ15 168 RESET# 198 NC 228 DQ61

19 DQ11 49 NC 79 NC 109 DQ57 139 VSS 169 NC 199 VSS 229 VSS

20 VSS 50 CKE0 80 VSS 110 VSS 140 DQ20 170 VDD 200 DQ36 230 DM7

21 DQ16 51 VDD 81 DQ32 111 DQS7# 141 DQ21 171 NF 201 DQ37 231 NC

22 DQ17 52 BA2 82 DQ33 112 DQS7 142 VSS 172 NF/A141202 VSS 232 VSS

23 VSS 53 NC 83 VSS 113 VSS 143 DM2 173 VDD 203 DM4 233 DQ62

24 DQS2# 54 VDD 84 DQS4# 114 DQ58 144 NC 174 A12 204 NC 234 DQ63

25 DQS2 55 A11 85 DQS4 115 DQ59 145 VSS 175 A9 205 VSS 235 VSS

26 VSS 56 A7 86 VSS 116 VSS 146 DQ22 176 VDD 206 DQ38 236 VDDSPD

27 DQ18 57 VDD 87 DQ34 117 SA0 147 DQ23 177 A8 207 DQ39 237 SA1

28 DQ19 58 A5 88 DQ35 118 SCL 148 VSS 178 A6 208 VSS 238 SDA

29 VSS 59 A4 89 VSS 119 SA2 149 DQ28 179 VDD 209 DQ44 239 VSS

30 DQ24 60 VDD 90 DQ40 120 VTT 150 DQ29 180 A3 210 DQ45 240 VTT

Note: 1. Pin 172 is NF for 1GB; A14 for 2GB.

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

Pin Assignments

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Pin Descriptions

The pin description table below is a comprehensive list of all possible pins for all DDR3

modules. All pins listed may not be supported on this module. See Pin Assignments for

information specific to this module.

Table 6: Pin Descriptions

Symbol Type Description

Ax Input Address inputs: Provide the row address for ACTIVE commands, and the column ad-

dress and auto precharge bit (A10) for READ/WRITE commands, to select one location

out of the memory array in the respective bank. A10 sampled during a PRECHARGE

command determines whether the PRECHARGE applies to one bank (A10 LOW, bank

selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code

during a LOAD MODE command. See the Pin Assignments table for density-specific ad-

dressing information.

BAx Input Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or

PRECHARGE command is being applied. BA define which mode register (MR0, MR1,

MR2, or MR3) is loaded during the LOAD MODE command.

CKx,

CKx#

Input Clock: Differential clock inputs. All control, command, and address input signals are

sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx Input Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circui-

try and clocks on the DRAM.

DMx Input Data mask (x8 devices only): DM is an input mask signal for write data. Input data

is masked when DM is sampled HIGH, along with that input data, during a write ac-

cess. Although DM pins are input-only, DM loading is designed to match that of the

DQ and DQS pins.

ODTx Input On-die termination: Enables (registered HIGH) and disables (registered LOW) termi-

nation resistance internal to the DDR3 SDRAM. When enabled in normal operation,

ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input

will be ignored if disabled via the LOAD MODE command.

Par_In Input Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being

entered.

RESET# Input

(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM

and the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitial-

ized as though a normal power-up was executed.

Sx# Input Chip select: Enables (registered LOW) and disables (registered HIGH) the command

decoder.

SAx Input Serial address inputs: Used to configure the temperature sensor/SPD EEPROM ad-

dress range on the I2C bus.

SCL Input Serial clock for temperature sensor/SPD EEPROM: Used to synchronize communi-

cation to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx I/O Check bits: Used for system error detection and correction.

DQx I/O Data input/output: Bidirectional data bus.

DQSx,

DQSx#

I/O Data strobe: Differential data strobes. Output with read data; edge-aligned with

read data; input with write data; center-aligned with write data.

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

Pin Descriptions

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Table 6: Pin Descriptions (Continued)

Symbol Type Description

SDA I/O Serial data: Used to transfer addresses and data into and out of the temperature sen-

sor/SPD EEPROM on the I2C bus.

TDQSx,

TDQSx#

Output Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD

MODE command to the extended mode register (EMR). When TDQS is enabled, DM is

disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are

no function.

Err_Out# Output

(open drain)

Parity error output: Parity error found on the command and address bus.

EVENT# Output

(open drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when crit-

ical temperature thresholds have been exceeded.

VDD Supply Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The

component VDD and VDDQ are connected to the module VDD.

VDDSPD Supply Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA Supply Reference voltage: Control, command, and address VDD/2.

VREFDQ Supply Reference voltage: DQ, DM VDD/2.

VSS Supply Ground.

VTT Supply Termination voltage: Used for control, command, and address VDD/2.

NC – No connect: These pins are not connected on the module.

NF – No function: These pins are connected within the module, but provide no functional-

ity.

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

Pin Descriptions

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DQ Map

Table 7: Component-to-Module DQ Map

Component

Reference

Number

Component

DQ Module DQ

Module Pin

Number

Component

Reference

Number

Component

DQ Module DQ

Module Pin

Number

U1 0 2 9 U2 0 10 18

1 5 123 1 13 132

2 7 129 2 15 138

3 0 3 3 8 12

4 6 128 4 14 137

5 4 122 5 12 131

6 3 10 6 11 19

7 1 4 7 9 13

U3 0 18 27 U4 0 26 36

1 21 141 1 29 150

2 23 147 2 31 156

3 16 21 3 24 30

4 22 146 4 30 155

5 20 140 5 28 149

6 19 28 6 27 37

7 17 22 7 25 31

U5 0 CB2 45 U6 0 34 87

1 CB5 159 1 37 201

2 CB7 165 2 39 207

3 CB0 39 3 32 81

4 CB6 164 4 38 206

5 CB4 158 5 36 200

6 CB3 46 6 35 88

7 CB1 40 7 33 82

U7 0 42 96 U8 0 50 105

1 45 210 1 53 219

2 47 216 2 55 225

3 40 90 3 48 99

4 46 215 4 54 224

5 44 209 5 52 218

6 43 97 6 51 106

7 41 91 7 49 100

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

DQ Map

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Table 7: Component-to-Module DQ Map (Continued)

Component

Reference

Number

Component

DQ Module DQ

Module Pin

Number

Component

Reference

Number

Component

DQ Module DQ

Module Pin

Number

U9 0 58 114

1 61 228

2 63 234

3 56 108

4 62 233

5 60 227

6 59 115

7 57 109

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

DQ Map

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Functional Block Diagram

Figure 2: Functional Block Diagram

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DM CS# DQ DQS#

DQ32

DQ33

DQ34

DQ35

DQ36

DQ37

DQ38

DQ39

DM CS# DQ DQS#

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

DM CS# DQ DQS#

DQ16

DQ17

DQ18

DQ19

DQ20

DQ21

DQ22

DQ23

DM CS# DQ DQS#

DQ24

DQ25

DQ26

DQ27

DQ28

DQ29

DQ30

DQ31

DM CS# DQ DQS#

DQ40

DQ41

DQ42

DQ43

DQ44

DQ45

DQ46

DQ47

DM CS# DQ DQS#

DQ48

DQ49

DQ50

DQ51

DQ52

DQ53

DQ54

DQ55

DM CS# DQ DQS#

DQ56

DQ57

DQ58

DQ59

DQ60

DQ61

DQ62

DQ63

DM CS# DQ DQS#

DQS0#

DQS0

DM0

S0#

DQS1#

DQS1

DM1

DQS2#

DQS2

DM2

DQS3#

DQS3

DM3

DQS4#

DQS4

DM4

DQS5#

DQS5

DM5

DQS6#

DQS6

DM6

DQS7#

DQS7

DM7

CB0

CB1

CB2

CB3

CB4

CB5

CB6

CB7

DM CS# DQ DQS#

DQS8#

DQS8

DM8

BA[2:0]

A[14/13:0]

RAS#

CAS#

WE#

CKE0

ODT0

RESET#

BA[2:0]: DDR3 SDRAM

A[14/13:0]: DDR3 SDRAM

RAS#: DDR3 SDRAM

CAS#: DDR3 SDRAM

WE#: DDR3 SDRAM

CKE0: DDR3 SDRAM

ODT0: DDR3 SDRAM

RESET#: DDR3 SDRAM

DDR3 SDRAM x 9

CK0

CK0#

CK1

CK1#

Temperature

sensor/

SPD EEPROM

A1 A2

SA0 SA1

SDA

SCL

EVT

U10

VREFCA

VSS

DDR3 SDRAM

VDD

VDDSPD Temperature sensor/SPD EEPROM

VTT

DDR3 SDRAM

VREFDQ

EVENT#

Clock, control, command, and address line terminations:

SA2

VSS

CKE0, A[14/13:0],

RAS#, CAS#, WE#,

ODT0, BA[2:0], S0#

DDR3

SDRAM

VTT

CK#

DDR3

SDRAM

VDD

Control, command, and address termination

Note: 1. The ZQ ball on each DDR3 component is connected to an external 240Ω ±1% resistor

that is tied to ground. It is used for the calibration of the component’s ODT and output

driver.

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

Functional Block Diagram

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General Description

DDR3 SDRAM modules are high-speed, CMOS dynamic random access memory mod-

ules that use internally configured 8-bank DDR3 SDRAM devices. DDR3 SDRAM mod-

ules use DDR architecture to achieve high-speed operation. DDR3 architecture is essen-

tially an 8n-prefetch architecture with an interface designed to transfer two data words

per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM mod-

ule effectively consists of a single 8n-bit-wide, one-clock-cycle data transfer at the inter-

nal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers

at the I/O pins.

DDR3 modules use two sets of differential signals: DQS, DQS# to capture data and CK

and CK# to capture commands, addresses, and control signals. Differential clocks and

data strobes ensure exceptional noise immunity for these signals and provide precise

crossing points to capture input signals.

Fly-By Topology

DDR3 modules use faster clock speeds than earlier DDR technologies, making signal

quality more important than ever. For improved signal quality, the clock, control, com-

mand, and address buses have been routed in a fly-by topology, where each clock, con-

trol, command, and address pin on each DRAM is connected to a single trace and ter-

minated (rather than a tree structure, where the termination is off the module near the

connector). Inherent to fly-by topology, the timing skew between the clock and DQS sig-

nals can be easily accounted for by using the write-leveling feature of DDR3.

Temperature Sensor with Serial Presence-Detect EEPROM

Thermal Sensor Operations

The temperature from the integrated thermal sensor is monitored and converts into a

digital word via the I2C bus. System designers can use the user-programmable registers

to create a custom temperature-sensing solution based on system requirements. Pro-

gramming and configuration details comply with JEDEC standard No. 21-C page 4.7-1,

"Definition of the TSE2002av, Serial Presence Detect with Temperature Sensor."

Serial Presence-Detect EEPROM Operation

DDR3 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a

256-byte EEPROM. The first 128 bytes are programmed by Micron to comply with JE-

DEC standard JC-45, "Appendix X: Serial Presence Detect (SPD) for DDR3 SDRAM Mod-

ules." These bytes identify module-specific timing parameters, configuration informa-

tion, and physical attributes. The remaining 128 bytes of storage are available for use by

the customer. System READ/WRITE operations between the master (system logic) and

the slave EEPROM device occur via a standard I2C bus using the DIMM’s SCL (clock)

SDA (data), and SA (address) pins. Write protect (WP) is connected to VSS, permanently

disabling hardware write protection. For further information refer to Micron technical

note TN-04-42, "Memory Module Serial Presence-Detect."

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

General Description

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Electrical Specifications

Stresses greater than those listed may cause permanent damage to the module. This is a

stress rating only, and functional operation of the module at these or any other condi-

tions outside those indicated in each device's data sheet is not implied. Exposure to ab-

solute maximum rating conditions for extended periods may adversely affect reliability.

Table 8: Absolute Maximum Ratings

Symbol Parameter Min Max Units

VDD VDD supply voltage relative to VSS –0.4 1.975 V

VIN, VOUT Voltage on any pin relative to VSS –0.4 1.975 V

Table 9: Operating Conditions

Symbol Parameter Min Nom Max Units Notes

VDD VDD supply voltage 1.283 1.35 1.45 V

1.425 1.5 1.575 V 1

IVTT Termination reference current from VTT –600 – 600 mA

VTT Termination reference voltage (DC) – com-

mand/address bus

0.49 × VDD - 20mV 0.5 × VDD 0.51 × VDD + 20mV V 2

IIInput leakage current; Any in-

put 0V ≤ VIN ≤ VDD; VREF input

0V ≤ VIN ≤ 0.95V (All other pins

not under test = 0V)

Address in-

puts, RAS#,

CAS#, WE#,

BA, S#, CKE,

ODT, CK, CK#

–18 0 18 µA

DM –2 0 2

IOZ Output leakage current; 0V ≤

VOUT ≤ VDDQ; DQ and ODT are

disabled; ODT is HIGH

DQ, DQS,

DQS#

–5 0 5 µA

IVREF VREF supply leakage current; VREFDQ = VDD/2

or VREFCA = VDD/2 (All other pins not under

test = 0V)

–9 0 9 µA

TAModule ambient operating

temperature

Commercial 0 – 70 °C 3, 4

TCDDR3 SDRAM component case

operating temperature

Commercial 0 – 95 °C 3, 4, 5

Notes: 1. Module is backward-compatible with 1.5V operation. Refer to device specification for

details and operation guidance.

2. VTT termination voltage in excess of the stated limit will adversely affect the command

and address signals’ voltage margin and will reduce timing margins.

3. TA and TC are simultaneous requirements.

4. For further information, refer to technical note TN-00-08: "Thermal Applications,” avail-

able on Micron’s Web site.

5. The refresh rate is required to double when 85°C < TC ≤ 95°C.

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

Electrical Specifications

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DRAM Operating Conditions

Recommended AC operating conditions are given in the DDR3 component data sheets.

Component specifications are available on Micron’s Web site. Module speed grades cor-

relate with component speed grades, as shown below.

Table 10: Module and Component Speed Grades

DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades

Module Speed Grade Component Speed Grade

-1G9 -107

-1G6 -125

-1G4 -15E

-1G1 -187E

-1G0 -187

-80C -25E

-80B -25

Design Considerations

Simulations

Micron memory modules are designed to optimize signal integrity through carefully de-

signed terminations, controlled board impedances, routing topologies, trace length

matching, and decoupling. However, good signal integrity starts at the system level.

Micron encourages designers to simulate the signal characteristics of the system's

memory bus to ensure adequate signal integrity of the entire memory system.

Power

Operating voltages are specified at the DRAM, not at the edge connector of the module.

Designers must account for any system voltage drops at anticipated power levels to en-

sure the required supply voltage is maintained.

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

DRAM Operating Conditions

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IDD Specifications

Table 11: DDR3 IDD Specifications and Conditions – 1GB (Die Revision G)

Values are for the MT41K128M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 1Gb (128 Meg x

8) component data sheet

Parameter Symbol 1600 1333 1066 Units

Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 675 630 585 mA

Operating current 1: One bank ACTIVATE-to-READ-to-PRE-

CHARGE

IDD1 810 765 720 mA

Precharge power-down current: Slow exit IDD2P0 108 108 108 mA

Precharge power-down current: Fast exit IDD2P1 315 270 225 mA

Precharge quiet standby current IDD2Q 405 405 360 mA

Precharge standby current IDD2N 405 405 360 mA

Precharge standby ODT current IDD2NT 495 450 450 mA

Active power-down current IDD3P 315 315 270 mA

Active standby current IDD3N 405 405 360 mA

Burst read operating current IDD4R 1305 1170 900 mA

Burst write operating current IDD4W 1350 1215 1035 mA

Refresh current IDD5B 1575 1530 1485 mA

Self refresh temperature current: MAX TC = 85°C IDD6 72 72 72 mA

Self refresh temperature current (SRT-enabled): MAX TC = 95°C IDD6ET 90 90 90 mA

All banks interleaved read current IDD7 2250 2205 1800 mA

Reset current IDD8 126 126 126 mA

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

IDD Specifications

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Table 12: DDR3 IDD Specifications and Conditions – 2GB (Die Revision D)

Values are for the MT41K256M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 2Gb (256 Meg x

8) component data sheet

Parameter Symbol 1333 1066 Units

Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 765 675 mA

Operating current 1: One bank ACTIVATE-to-READ-to-PRE-

CHARGE

IDD1 900 855 mA

Precharge power-down current: Slow exit IDD2P0 108 108 mA

Precharge power-down current: Fast exit IDD2P1 270 225 mA

Precharge quiet standby current IDD2Q 315 270 mA

Precharge standby current IDD2N 333 288 mA

Precharge standby ODT current IDD2NT 405 360 mA

Active power-down current IDD3P 315 270 mA

Active standby current IDD3N 360 315 mA

Burst read operating current IDD4R 1440 1260 mA

Burst write operating current IDD4W 1485 1305 mA

Refresh current IDD5B 1800 1710 mA

Self refresh temperature current: MAX TC = 85°C IDD6 108 108 mA

Self refresh temperature current (SRT-enabled): MAX TC = 95°C IDD6ET 135 135 mA

All banks interleaved read current IDD7 3465 3015 mA

Reset current IDD8 126 126 mA

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

IDD Specifications

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Table 13: DDR3 IDD Specifications and Conditions – 2GB (Die Revision M)

Values are for the MT41K256M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 2Gb (256 Meg x

8) component data sheet

Parameter Symbol 1600 1333 1066 Units

Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 540 495 450 mA

Operating current 1: One bank ACTIVATE-to-READ-to-PRE-

CHARGE

IDD1 675 630 585 mA

Precharge power-down current: Slow exit IDD2P0 108 108 108 mA

Precharge power-down current: Fast exit IDD2P1 297 252 207 mA

Precharge quiet standby current IDD2Q 297 252 207 mA

Precharge standby current IDD2N 315 270 225 mA

Precharge standby ODT current IDD2NT 360 315 270 mA

Active power-down current IDD3P 423 378 333 mA

Active standby current IDD3N 468 423 378 mA

Burst read operating current IDD4R 1260 1125 990 mA

Burst write operating current IDD4W 1125 990 855 mA

Refresh current IDD5B 1710 1665 1620 mA

Self refresh temperature current: MAX TC = 85°C IDD6 108 108 108 mA

Self refresh temperature current (SRT-enabled): MAX TC = 95°C IDD6ET 135 135 135 mA

All banks interleaved read current IDD7 1980 1845 1710 mA

Reset current IDD8 126 126 126 mA

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

IDD Specifications

PDF: 09005aef83b2f5c3

ksf9c128_256x72az.pdf - Rev. D 04/12 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 14: DDR3 IDD Specifications and Conditions – 2GB (Die Revision K)

Values are for the MT41K256M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 2Gb (256 Meg x

8) component data sheet

Parameter Symbol 1600 1333 1066 Units

Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 351 342 324 mA

Operating current 1: One bank ACTIVATE-to-READ-to-PRE-

CHARGE

IDD1 468 450 414 mA

Precharge power-down current: Slow exit IDD2P0 108 108 108 mA

Precharge power-down current: Fast exit IDD2P1 126 126 126 mA

Precharge quiet standby current IDD2Q 180 180 180 mA

Precharge standby current IDD2N 189 189 189 mA

Precharge standby ODT current IDD2NT 279 261 234 mA

Active power-down current IDD3P 189 189 189 mA

Active standby current IDD3N 288 270 252 mA

Burst read operating current IDD4R 846 738 612 mA

Burst write operating current IDD4W 873 765 657 mA

Refresh current IDD5B 990 981 963 mA

Self refresh temperature current: MAX TC = 85°C IDD6 108 108 108 mA

Self refresh temperature current (SRT-enabled): MAX TC = 95°C IDD6ET 135 135 135 mA

All banks interleaved read current IDD7 1404 1350 1089 mA

Reset current IDD8 126 126 126 mA

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

IDD Specifications

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Temperature Sensor with Serial Presence-Detect EEPROM

The temperature sensor continuously monitors the module's temperature and can be

read back at any time over the I2C bus shared with the SPD EEPROM. Refer to JEDEC

standard No. 21-C page 4.7-1, "Definition of the TSE2002av, Serial Presence Detect with

Temperature Sensor."

Serial Presence-Detect

For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.

Table 15: Temperature Sensor with SPD EEPROM Operating Conditions

Parameter/Condition Symbol Min Max Units

Supply voltage VDDSPD 3.0 3.6 V

Supply current: VDD = 3.3V IDD – 2.0 mA

Input high voltage: Logic 1; SCL, SDA VIH 1.45 VDDSPD + 1 V

Input low voltage: Logic 0; SCL, SDA VIL – 0.55 V

Output low voltage: IOUT = 2.1mA VOL – 0.4 V

Input current IIN –5.0 5.0 µA

Temperature sensing range – –40 125 °C

Temperature sensor accuracy (class B) – –1.0 1.0 °C

Table 16: Temperature Sensor and EEPROM Serial Interface Timing

Parameter/Condition Symbol Min Max Units

Time bus must be free before a new transition can

start

tBUF 4.7 – µs

SDA fall time tF 20 300 ns

SDA rise time tR – 1000 ns

Data hold time tHD:DAT 200 900 ns

Start condition hold time tH:STA 4.0 – µs

Clock HIGH period tHIGH 4.0 50 µs

Clock LOW period tLOW 4.7 – µs

SCL clock frequency tSCL 10 100 kHz

Data setup time tSU:DAT 250 – ns

Start condition setup time tSU:STA 4.7 – µs

Stop condition setup time tSU:STO 4.0 – µs

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

Temperature Sensor with Serial Presence-Detect EEPROM

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EVENT# Pin

The temperature sensor also adds the EVENT# pin (open-drain). Not used by the SPD

EEPROM, EVENT# is a temperature sensor output used to flag critical events that can be

set up in the sensor’s configuration register.

EVENT# has three defined modes of operation: interrupt mode, compare mode, and

critical temperature mode. Event thresholds are programmed in the 0x01 register using

a hysteresis. The alarm window provides a comparison window, with upper and lower

limits set in the alarm upper boundary register and the alarm lower boundary register,

respectively. When the alarm window is enabled, EVENT# will trigger whenever the

temperature is outside the MIN or MAX values set by the user.

The interrupt mode enables software to reset EVENT# after a critical temperature

threshold has been detected. Threshold points are set in the configuration register by

the user. This mode triggers the critical temperature limit and both the MIN and MAX of

the temperature window.

The compare mode is similar to the interrupt mode, except EVENT# cannot be reset by

the user and returns to the logic HIGH state only when the temperature falls below the

programmed thresholds.

Critical temperature mode triggers EVENT# only when the temperature has exceeded

the programmed critical trip point. When the critical trip point has been reached, the

temperature sensor goes into comparator mode, and the critical EVENT# cannot be

cleared through software.

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

Temperature Sensor with Serial Presence-Detect EEPROM

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Module Dimensions

Figure 3: 240-Pin DDR3 UDIMM

30.50 (1.20)

29.85 (1.175)

PIN 1

17.3 (0.68)

TYP

2.50 (0.098) D

(2X)

2.30 (0.091) TYP

5.0 (0.197) TYP

123.0 (4.84)

TYP

1.0 (0.039)

TYP

0.80 (0.031)

TYP

0.75 (0.03) R

(8X)

0.76 (0.030) R

PIN 120

Front view

133.50 (5.256)

133.20 (5.244)

47.0 (1.85)

TYP

71.0 (2.79)

TYP

9.5 (0.374)

TYP

Back view

PIN 240 PIN 121

1.37 (0.054)

1.17 (0.046)

2.7 (0.106)

MAX

2.20 (0.087) TYP

1.45 (0.057) TYP

3.05 (0.12) TYP

54.68 (2.15)

TYP

3.0 (0.118) 4X TYP

23.3 (0.92)

TYP

0.50 (0.02) R

(4X)

0.9 (0.035) TYP

1.0 (0.039) R (8X)

15.0 (0.59)

TYP

(4X)

3.1 (0.122) 2X TYP

5.1 (0.2) TYP

45°, 4X

U1 U2 U3 U4 U5

U10

U6 U7 U8 U9

No components this side of module

Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.

2. The dimensional diagram is for reference only.

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900

www.micron.com/productsupport Customer Comment Line: 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc.

All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.

Although considered final, these specifications are subject to change, as further product development and data characterization some-

times occur.

1GB, 2GB (x72, ECC, SR) 240-Pin 1.35V DDR3L UDIMM

Module Dimensions

PDF: 09005aef83b2f5c3

ksf9c128_256x72az.pdf - Rev. D 04/12 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice.