SPP07N60C3 - Infineon Technologies

2009-11-27Rev. 3.2 Page 1

SPP07N60C3

SPI07N60C3, SPA07N60C3

Cool MOS™ Power Transistor VDS @ Tjmax 650 V

RDS(on) 0.6 Ω

ID7.3 A

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dtrated

• High peak current capability

• Improved transconductance

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

PG-TO220PG-TO220FP PG-TO262

P-TO220-3-1

P-TO220-3-31

123

Marking

07N60C3

Type Package Ordering Code

SPP07N60C3 PG-TO220-3

Q67040-S4400

SPI07N60C3 PG-TO262

Q67040-S4424

SPA07N60C3 PG-TO220FP

SP000216303

Maximum Ratings

Parameter Symbol Value Unit

SPP_I SPA

Continuous drain current

= 25 °C

= 100 °C

7.3

4.6

7.3

4.6

Pulsed drain current,

limited by

jmax

Dpuls 21.9 21.9

Avalanche energy, single pulse

=5.5A,

=50V

230 230

Avalanche energy, repetitive t

limited by T

jmax

=7.3A,

=50V

0.5 0.5

Avalanche current, repetitive

AR limited by

jmax

AR 7.3 7.3

Gate source voltage static

GS ±20

±20

Gate source voltage AC (f >1Hz)

±30

Power dissipation,

= 25°C

tot

83 32

Operating and storage temperature T

stg

-55...+150 °C

Reverse diode dv/dt dv/dt 15 V/ns

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2009-11-27Rev. 3.2 Page 2

SPP07N60C3

SPI07N60C3, SPA07N60C3

Maximum Ratings

Parameter Symbol Value Unit

Drain Source voltage slope

VDS = 480 V, ID = 7.3 A, Tj = 125 °C

dv/dt50 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case RthJC - - 1.5 K/W

Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9

Thermal resistance, junction - ambient, leaded RthJA - - 62

Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

RthJA

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s

Tsold - - 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=7.3A - 700 -

Gate threshold voltage VGS(th) ID=350µA, VGS=VDS 2.1 3 3.9

Zero gate voltage drain current IDSS VDS=600V, VGS=0V,

Tj=25°C

Tj=150°C

0.5

100

µA

Gate-source leakage current IGSS VGS=30V, VDS=0V - - 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A

Tj=25°C

Tj=150°C

0.54

1.46

0.6

Ω

Gate input resistance RGf=1MHz, open drain - 0.8 -

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2009-11-27Rev. 3.2 Page 3

SPP07N60C3

SPI07N60C3, SPA07N60C3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Characteristics

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=4.6A

- 6 - S

Input capacitance Ciss VGS=0V, VDS=25V,

f=1MHz

- 790 - pF

Output capacitance Coss - 260 -

Reverse transfer capacitance Crss - 16 -

Effective output capacitance,4)

energy related

Co(er) VGS=0V,

VDS=0V to 480V

- 30 -

Effective output capacitance,5)

time related

Co(tr) - 55 -

Turn-on delay time td(on) VDD=380V, VGS=0/13V,

ID=7.3A, RG=12Ω,

Tj=125°C

- 6 - ns

Rise time tr- 3.5 -

Turn-off delay time td(off) - 60 100

Fall time tf- 7 15

Gate Charge Characteristics

Gate to source charge Qgs VDD=480V, ID=7.3A - 3 - nC

Gate to drain charge Qgd - 9.2 -

Gate charge total QgVDD=480V, ID=7.3A,

VGS=0 to 10V

- 21 27

Gate plateau voltage V(plateau) VDD=480V, ID=7.3A - 5.5 - V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

6ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.

Identical low-side and high-side switch.

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2009-11-27Rev. 3.2 Page 4

SPP07N60C3

SPI07N60C3, SPA07N60C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Inverse diode continuous

forward current

ISTC=25°C - - 7.3 A

Inverse diode direct current,

pulsed

ISM - - 21.9

Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V

Reverse recovery time trr VR=480V, IF=IS ,

diF/dt=100A/µs

- 400 600 ns

Reverse recovery charge Qrr - 4 - µC

Peak reverse recovery current Irrm - 28 - A

Peak rate of fall of reverse

recovery current

dirr/dt Tj=25°C - 800 - A/µs

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

SPP_I SPA SPP_I SPA

Rth1 0.024 0.024 K/W Cth1 0.00012 0.00012 Ws/K

Rth2 0.046 0.046 Cth2 0.0004578 0.0004578

Rth3 0.085 0.085 Cth3 0.000645 0.000645

Rth4 0.308 0.195 Cth4 0.001867 0.001867

Rth5 0.317 0.45 Cth5 0.004795 0.007558

Rth6 0.112 2.511 Cth6 0.045 0.412

External Heatsink

TjTcase

Tamb

Cth1 Cth2

Rth1 Rth,n

Cth,n

Ptot (t)

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2009-11-27Rev. 3.2 Page 5

SPP07N60C3

SPI07N60C3, SPA07N60C3

1 Power dissipation

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

100 SPP07N60C3

Ptot

2 Power dissipation FullPAK

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

Ptot

3 Safe operating area

ID= f ( VDS )

parameter : D = 0 , TC=25°C

10 010 110 210 3

VDS

-2

-1

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

4 Safe operating area FullPAK

ID = f (VDS)

parameter: D = 0, TC = 25°C

10 010 110 210 3

VDS

-2

-1

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

tp = 10 ms

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2009-11-27Rev. 3.2 Page 6

SPP07N60C3

SPI07N60C3, SPA07N60C3

5 Transient thermal impedance

ZthJC = f(tp)

parameter: D=tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -1

-3

-2

-1

K/W

ZthJC

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

single pulse

6 Transient thermal impedance FullPAK

ZthJC = f(tp)

parameter: D = tp/t

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1

-3

-2

-1

K/W

ZthJC

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

single pulse

7 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp= 10 µs, VGS

0 5 10 15 VDS 25

4,5V

5,5V

6,5V

20V

10V

8 Typ. output characteristic

ID = f (VDS); Tj=150°C

parameter: tp= 10 µs, VGS

0 2 4 6 8 10 12 14 16 18 20 22 V 25

VDS

4.5V

5.5V

20V

6.5V

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2009-11-27Rev. 3.2 Page 7

SPP07N60C3

SPI07N60C3, SPA07N60C3

9 Typ. drain-source on resistance

RDS(on)=f(ID)

parameter: Tj=150°C, VGS

0 2 4 6 8 10 12 A 15

Ω

RDS(on)

4.5V

5.5V

6.5V

20V

10 Drain-source on-state resistance

RDS(on) = f(Tj)

parameter : ID = 4.6 A, VGS = 10 V

-60 -20 20 60 100 °C 180

0.4

0.8

1.2

1.6

2.4

2.8

Ω

3.4 SPP07N60C3

RDS(on)

typ

98%

11 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0 2 4 6 8 10 12 14 16 V 20

VGS

25°C

150°C

12 Typ. gate charge

VGS =f (QGate)

parameter: ID = 7.3 A pulsed

0 4 8 12 16 20 24 28 nC 34

QGate

16 SPP07N60C3

VGS

0,8 VDS max

DS max

0,2

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2009-11-27Rev. 3.2 Page 8

SPP07N60C3

SPI07N60C3, SPA07N60C3

13 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp= 10 µs

0 0.4 0.8 1.2 1.6 2 2.4 V3

VSD

-1

SPP07N60C3

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

14 Typ. switching time

t = f(ID), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, RG=12Ω

0 1 2 3 4 5 6 A 8

td(off)

td(on)

15 Typ. switching time

t = f (RG), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, ID=7.3 A

0 20 40 60 80 100 Ω130

100

150

200

250

300

350

400

500

td(off)

td(on)

16 Typ. drain current slope

di/dt = f(RG), inductive load, Tj = 125°C

par.: VDS=380V, VGS=0/+13V, ID=7.3A

0 20 40 60 80 100 Ω130

500

1000

1500

2000

A/µs

3000

di/dt

di/dt(on)

di/dt(off)

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2009-11-27Rev. 3.2 Page 9

SPP07N60C3

SPI07N60C3, SPA07N60C3

17 Typ. drain source voltage slope

dv/dt = f(RG), inductive load, Tj = 125°C

par.: VDS=380V, VGS=0/+13V, ID=7.3A

0 20 40 60 80 Ω120

V/ns

100

dv/dt

dv/dt(on)

dv/dt(off)

18 Typ. switching losses

E = f (ID), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, RG=12Ω

0 1 2 3 4 5 6 A 8

0.005

0.01

0.015

mWs

0.025

Eon*

Eoff

*) Eon includes SDP06S60

diode commutation losses.

19 Typ. switching losses

E = f(RG), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, ID=7.3A

0 20 40 60 80 100 Ω130

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

mWs

0.2

Eon*

Eoff

*) Eon includes SDP06S60

diode commutation losses.

20 Avalanche SOA

IAR = f (tAR)

par.: Tj≤ 150 °C

10 -3 10 -2 10 -1 10 010 110 210 4

µs

tAR

IAR

Tj(START)=25°C

Tj(START)=125°C

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2009-11-27Rev. 3.2 Page 10

SPP07N60C3

SPI07N60C3, SPA07N60C3

21 Avalanche energy

EAS = f(Tj)

par.: ID = 5.5 A, VDD = 50 V

20 40 60 80 100 120 °C 160

100

120

140

160

180

200

220

260

EAS

23 Avalanche power losses

PAR = f (f )

parameter: EAR=0.5mJ

10 410 510 6

MHz

100

200

300

500

PAR

22 Drain-source breakdown voltage

V(BR)DSS = f(Tj)

-60 -20 20 60 100 °C 180

540

560

580

600

620

640

660

680

720

SPP07N60C3

V(BR)DSS

24 Typ. capacitances

C = f(VDS)

parameter: VGS=0V, f=1 MHz

0 100 200 300 400 V 600

VDS

Ciss

Coss

Crss

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2009-11-27Rev. 3.2 Page 11

SPP07N60C3

SPI07N60C3, SPA07N60C3

25 Typ. Coss stored energy

Eoss=f(VDS)

0 100 200 300 400 V 600

VDS

0.5

1.5

2.5

3.5

4.5

µJ

5.5

Eoss

Definition of diodes switching characteristics

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2009-11-27Rev. 3.2 Page 12

SPP07N60C3

SPI07N60C3, SPA07N60C3

PG-TO220-3-1, PG-TO220-3-21 : Outline

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2009-11-27Rev. 3.2 Page 13

SPP07N60C3

SPI07N60C3, SPA07N60C3

PG-TO220-3-31/3-111 Fully isolated package (2500VAC; 1 minute)

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2009-11-27 Rev. 3.2 Page 14

SPP07N60C3

SPI07N60C3, SPA07N60C3

PG-TO-262-3-1/PG-TO262-3-21 (I²-PAK)

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2009-11-27Rev. 3.2 Page 15

SPP07N60C3

SPI07N60C3, SPA07N60C

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