CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1993 9-82
SEMICONDUCTOR
HI-201HS
High Speed Quad SPST
CMOS Analog Switch
File Number 3123
December 1993
Pinouts
HI-201HS (CDIP, PDIP, SOIC)
TOP VIEW HI201HS (LCC)
TOP VIEW HI201HS (PLCC)
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
A1
OUT1
IN1
V-
GND
IN4
A4
OUT4
A2
IN2
V+
NC
IN3
OUT3
A3
OUT2
5
6
7
8
9101112
13
3212019
15
14
18
17
16
OUT 1
OUT 2
A1
A2
IN 1
V-
GND
IN 4
IN 2
V+
IN 3
A4
A3
OUT 4
OUT 3
4
12
43
32119
20
4
5
6
7
814
15
16
17
18
910 11 12 13
A1
OUT 1
A2
OUT 2
IN 1
V-
GND
IN 4
IN 2
V+
IN 3
OUT 4
OUT 3
A4
A3
Features
• Fast Switching Times, tON = 30ns, tOFF = 40ns
• Low “ON” Resistance of 30Ω
• Pin Compatible with Standard HI-201
• Wide Analog Voltage Range (±15V Supplies) of ±15V
• Low Charge Injection (±15V Supplies) 10pC
• TTL Compatible
• Symmetrical Switching Analog Current Range of 80mA
Applications
• High Speed Multiplexing
• High Frequency Analog Switching
• Sample and Hold Circuits
• Digital Filters
• Operational Amplifier Gain Switching Networks
• Integrator Reset Circuits
Functional Diagram
LOGIC SWITCH
0
1ON
OFF
TTL
LOGIC
INPUT
SWITCH
CELL
LEVEL
SHIFTER
AND
DRIVER GATE
SOURCE
DRAIN
GATE
INPUT
OUTPUT
V-
V+
Description
The HI-201HS is a monolithic CMOS Analog Switch featur-
ing very fast switching speeds and low ON resistance. The
integrated circuit consists of four independently selectable
SPST switches and is pin compatible with the industry stan-
dard HI-201 switch.
Fabricated using silicon-gate technology and the Harris Dielectric
Isolation process, this TTL compatible device offers improved
performance over previously available CMOS analog switches.
Featuring maximum switching times of 50ns, low ON resistance of
50Ω maximum, and a wide analog signal range, the HI-201HS is
designed for any application where improved switching perfor-
mance, particularly switching speed, is required. (A more
detailed discussion on the design and application of the
HI-201HS can be found in Application Note 543.)
Ordering Information
PART NUMBER TEMP. RANGE PACKAGE
HI1-0201HS-5 0oC to +75oC 16 Lead Ceramic DIP
HI3-0201HS-4 -25oC to +85oC 16 Lead Plastic DIP
HI1-0201HS-2 -55oC to +125oC 16 Lead Ceramic DIP
HI1-0201HS-4 -25oC to +85oC 16 Lead Ceramic DIP
HI4P0201HS-5 0oC to +75oC 20 Lead PLCC
HI3-0201HS-5 0oC to +75oC 16 Lead Plastic DIP
HI1-0201HS-7 0oC to +75oC 16 Lead Ceramic DIP
HI4-0201HS/883 -55oC to +125oC 20 Lead LCC
HI9P0201HS-5 0oC to +75oC 16 Lead SOIC (W)
HI9P0201HS-9 -40oC to +85oC 16 Lead SOIC (W)
HI1-0201HS/883 -55oC to +125oC 16 Lead Ceramic DIP
HI1-0201HS -8 -55oC to +125oC 16 Lead Ceramic DIP
9-83
HI-201HS
Schematic Diagrams
TTL/CMOS REFERENCE CIRCUIT SWITCH CELL
DIGITAL INPUT BUFFER AND LEVEL SHIFTER
P41
VCC MP42 MP43 MP44
QP44 QN44
QN45
C49
C48
VR1
QN43
R42
R41
QN41
QN42
D41
5V
D42
5.6V
QP42
QP41
VEE
MN42 MN44 MN45
MP45
MP31
MN32
MP33
MN33
MN31
MP32
ANALOG
IN ANALOG
OUT
Q
Q
V-
V+
MN46 MP51
IQIX3 IX4 IX1
QN6
QN7
VR1 IX2
IX3
QP7
QP6
MN52
MN51
IX1 IX2
REPEAT FOR EACH
LEVEL SHIFTER
QN1
C1 R1
QP1
IQ
QN4
QN8
QN9 MP3
MP4
QP9
QP8
MP5
MP7
CFF
C2
QN2
QN5
QP2
R3
R2
QP5
QP4
VR1
MP9
MP6 MP10
MN3 MN4
MN5 MN6
MP8
MN7 MN8
MN10MN9
MP11
MN11
VEE
MP12
MN12 Q
MP13
MN13
VCC
MP14
MN14
Q
MP52
VA
9-84
Specifications HI-201HS
Absolute Maximum Ratings Thermal Information
Supply Voltage (Between Pins 4 and 13). . . . . . . . . . . . . . . . . . 36V
Digital Input Voltage (Pins 1, 8, 9, 16) . . . . . . . . . (V+) +4V, (V-) -4V
Analog Input Voltage (One Switch). . . . . . . . . . . . . . . . . .(V+) +2.0V
Pins 2, 3, 6, 7, 10, 11, 14, 15 . . . . . . . . . . . . . . . . . . . . . . .(V-) -2.0V
Peak Current (S or D)
(Pulse at 1ms, 10% Duty Cycle Max.) . . . . . . . . . . . . . . . . .50mA
Continuous Current Any Terminal (Except S or D). . . . . . . . . .25mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance θJA θJC
Ceramic DIP . . . . . . . . . . . . . . . . . . . . . . 80oC/W 24oC/W
Plastic DIP. . . . . . . . . . . . . . . . . . . . . . . . 100oC/W -
PLCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . 80oC/W -
SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100oC/W -
Operating Temperature
HI-201HS-2,-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC
HI-201HS-4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-25oC to +85oC
HI-201HS-5,-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +75oC
HI-201HS-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40oC to +85oC
Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Plastic Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications Supplies = +15V, -15V; VAH (Logic Level High) = 2.4V, VAL (Logic Level Low) = +0.8V, GND = 0V, Unless
Otherwise Specified
PARAMETER TEST
CONDITIONS TEMP
HI-201HS-2/-8 HI-201HS-5/-4/-9/-7
UNITSMIN TYP MAX MIN TYP MAX
SWITCHING CHARACTERISTICS
tON, Switch On Time (Note 3) +25oC - 30 50 - 30 50 ns
tOFF1, Switch Off Time (Note 3) +25oC - 40 50 - 40 50 ns
tOFF2, Switch Off Time (Note 3) +25oC - 150 - - 150 - ns
Output Settling Time 0.1% +25oC - 180 - - 180 - ns
“Off Isolation” (Note 4) +25oC - 72 - - 72 - dB
Crosstalk (Note 5) +25oC - 86 - - 86 - dB
Charge Injection (Note 6) +25oC - 10 - - 10 - pC
CS(OFF), Input Switch Capacitance +25oC - 10 - - 10 - pF
CD(OFF),Output Switch Capacitance +25oC - 10 - - 10 - pF
CD(ON), +25oC - 30 - - 30 - pF
CA, Digital Input Capacitance +25oC - 18 - - 18 - pF
CDS(OFF), Drain-To-Source Capacitance +25oC - 0.5 - - 0.5 - pF
DIGITAL INPUT CHARACTERISTICS
VAL, Input Low Threshold Full - - 0.8 - - 0.8 V
VAH, Input High Threshold +25oC 2.0 - - 2.0 - - V
Full 2.4 - - 2.4 - - V
IAL, Input Leakage Current (Low) +25oC - -200 - - -200 - µA
Full - - -500 - - -500 µA
IAH, Input Leakage Current (High) VAH = 4.0V +25oC - 20 - - 20 - µA
Full - - +40 - - +40 µA
ANALOG SWITCH CHARACTERISTICS
VS, Analog Signal Range Full -15 - +15 -15 - +15 V
RON, On Resistance (Note 2) +25oC - 30 50 - 30 50 Ω
Full - - 75 - - 75 Ω
RON Match +25oC- 3 - - 3 - %
9-85
Specifications HI-201HS
IS(OFF), Off Input Leakage Current +25oC - 0.3 10 - 0.3 10 nA
Full - - 100 - - 50 nA
ID(OFF), Off Output Leakage Current +25oC - 0.3 10 - 0.3 10 nA
Full - - 100 - - 50 nA
ID(ON), On Leakage Current +25oC - 0.1 10 - 0.1 10 nA
Full - - 100 - - 50 nA
POWER SUPPLY CHARACTERISTICS (Note 7)
PD, Power Dissipation +25oC - 120 - - 120 - mW
Full - - 240 - - 240 mW
I+, Current (Pin 13) +25oC - 4.5 - - 4.5 - mA
Full - - 10.0 - - 10.0 mA
I-, Current (Pin 4) +25oC - 3.5 - - 3.5 - mA
Full - - 6 - - 6 mA
NOTES:
1. Absolute maximum ratings are limiting values, applied individually, beyond which the serviceability of the circuit may be impaired. Func-
tional operability under any of these conditions is not necessarily implied.
2. VOUT = ±10V, IOUT = 1mA.
3. RL = 1kΩ, CL = 35pF, VIN = +10V, VA = +3V. (See Switching Waveforms).
4. VA = 3V, RL = 1kΩ, CL = 10pF, VIN = 3VRMS, f = 100kHz.
5. VA = 3V, RL = 1kΩ, VIN = 3VRMS, f = 100kHz.
6. CL = 1000pF, VIN = 0V, RIN = 0V, ∆Q = CL x ∆VO.
7. VA = 3V or VA = 0 for all switches.
Switching Waveforms
FIGURE 1A. FIGURE 1B.
FIGURE 1. SWITCH tON AND tOFF TIMES
Electrical Specifications Supplies = +15V, -15V; VAH (Logic Level High) = 2.4V, VAL (Logic Level Low) = +0.8V, GND = 0V, Unless
Otherwise Specified (Continued)
PARAMETER TEST
CONDITIONS TEMP
HI-201HS-2/-8 HI-201HS-5/-4/-9/-7
UNITSMIN TYP MAX MIN TYP MAX
DIGITAL
INPUT
SWITCH
OUTPUT
VAH = 3.0V
50% VAL = 0V
90%
10%
tON
50%
0V
90%
tOFF2
tOFF1
TOP: TTL Input (2V/Div.) BOTTOM: Output (5V/Div.)
HORIZONTAL: 100ns/Div.
9-86
HI-201HS
Typical Performance Curves
FIGURE 2. “ON” RESISTANCE vs ANALOG SIGNAL LEVEL
AND TEMPERATURE FIGURE 3. “ON” RESISTANCE vs ANALOG SIGNAL LEVEL
AND POWER SUPPLY VOLTAGE
FIGURE 4. IS(OFF) OR ID(OFF) vs TEMPERATURE† FIGURE 5. ID(ON) vs TEMPERATURE†
FIGURE 6. SUPPLY CURRENT vs TEMPERATURE FIGURE 7. LEAKAGE CURRENT vs ANALOG INPUT VOLTAGE
† Theoretically, leakage current will continue to decrease below +25oC. But due to environmental conditions, leakage measurements below
this temperature are not representative of actual switch performance.
-15 -10 -5 0 +5 +10 +15
80
70
60
50
40
30
20
10
0
+125oC
V+ = +15V, V- = -15V
+25oC
-55oC
ANALOG INPUT (V)
ON RESISTANCE (Ω)
-15 -10 -5 0 +5 +10 +15
80
70
60
50
40
30
20
10
0
V+ = +12V, V- = -12V
TA = +25oC
ANALOG INPUT (V)
ON RESISTANCE (Ω)
V+ = +15V, V- = -15V
V+ = +8V, V- = -8V
V+ = +10V, V- = -10V
25 75 125
TEMPERATURE (oC)
0.01
0.10
1.0
10.0
100.0
LEAKAGE CURRENT (nA)
25 75 125
TEMPERATURE (oC)
0.01
0.10
1.0
10.0
100.0
LEAKAGE CURRENT (nA)
TEMPERATURE (oC)
125105856545255-15-35-55
7
6
5
4
3
2
1
0
SUPPLY CURRENT (mA)
V+ = +15V, V- = -15V
I+
I-
14121086420-2-4-6-8-10-12-14 ANALOG INPUT (V)
LEAKAGE CURRENT (pA)
100
80
60
40
20
0
-20
-40
-60
-80
-100
-120
-140
-160
-180
-200
IDON
V+ = +15V, V- = -15V
ISOFF → VD = 0V
IDOFF → VS = 0V
ISOFF/IDOFF
9-87
HI-201HS
FIGURE 8. DIGITAL INPUT LEAKAGE CURRENT vs
TEMPERATURE† FIGURE 9. LEAKAGE CURRENT vs ANALOG INPUT VOLTAGE
FIGURE 10. SWITCHING TIME vs TEMPERATURE FIGURE 11. SWITCHING TIME vs POSITIVE AND NEGATIVE
SUPPLY VOLTAGE
FIGURE 12. SWITCHING TIME vs POSITIVE SUPPLY VOLTAGE FIGURE 13. SWITCHING TIME vs NEGATIVE SUPPLY VOLTAGE
† Theoretically, leakage current will continue to decrease below +25oC. But due to environmental conditions, leakage measurements below
this temperature are not representative of actual switch performance.
Typical Performance Curves
(Continued)
TEMPERATURE (oC)
12511510595857565554525
VAL = 0V, VAH2 = 3V, VAH1 = 5V
35
60
40
20
0
-20
-40
-60
-80
-100
-120
-140
-160
-180
-200
-220
-240
-260
-280
LEAKAGE CURRENT (µA)
IAH1
IAH2
IAL
+16.0+15.5+15.0+14.5-14.0-14.5-15.0-15.5-16.0 +14.0
ANALOG INPUT (V)
10
9
8
7
6
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
V+ = +15V, V- = -15V, TA = +25oC
ISOFF → VD = 0V
IDOFF → VS = 0V
LEAKAGE CURRENT (nA)
TEMPERATURE (oC)
125105856545255-15-35-55
180
160
140
120
100
80
60
40
20
0
SWITCHING TIME (ns)
tOFF2
tOFF1
tON
V+ = +15V
V- = -15V
RL = 1kΩ
CL = 35pF
POSITIVE AND NEGATIVE SUPPLY (V)
RL = 1K, CL = 35pF, TA = +25oC
tOFF2
tOFF1
tON
±5±6±7±8±9±10 ±11 ±12 ±13 ±14 ±15
350
300
250
200
150
100
50
0
SWITCHING TIME (ns)
POSITIVE SUPPLY (V)
V- = -15V, RL = 1kΩ
tOFF2
tOFF1
tON
56789101112131415
350
300
250
200
150
100
50
SWITCHING TIME (ns)
CL = 35pF, TA = +25oC
175
NEGATIVE SUPPLY (V)
tOFF2
tOFF1
tON
-5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15
350
300
250
200
150
100
50
0
SWITCHING TIME (ns)
V+ = +15V, RL = 1kΩ
CL = 35pF, TA = +25oC
9-88
HI-201HS
FIGURE 14. SWITCHING TIME vs INPUT LOGIC AMPLITUDE FIGURE 15. INPUT SWITCHING THRESHOLD vs POSITIVE AND
NEGATIVE SUPPLY VOLTAGES
FIGURE 16. CHARGE INJECTION vs ANALOG INPUT FIGURE 17. CAPACITANCE vs ANALOG INPUT
FIGURE 18. OFF ISOLATION vs FREQUENCY FIGURE 19. CROSSTALK vs FREQUENCY
Typical Performance Curves
(Continued)
DIGITAL INPUT AMPLITUDE (V)
tOFF2
tOFF1
tON
012345
350
300
250
200
150
100
50
0
SWITCHING TIME (ns)
V + = +15V, V - = -15V, RL = 1kΩ
CL = 35pF, V AL = 0V, TA = +25oC
POWER SUPPLY VOLTAGE (V)
±10 ±11 ±12 ±13 ±14 ±15
±9±8±7±6±5
0
3.0
2.5
2.0
1.8
1.5
1.0
0.5
INPUT LOGIC THRESHOLD (V)
ANALOG INPUT (V)
-10 -5 0 +5 +10
-10
-20
-30
-40
-50
50
40
30
20
10
0
V+ = +15V, V- = -15V
CL = 1000pF, RIN = 0Ω
QOUT
VA
CL
IN OUT ∆VO
∆QO = CL x ∆VO
CHARGE INJECTION (pC)
ANALOG INPUT (V)
-15 -5 0 +5 +15
40
CDON
+10-10
CDOFF OR CSOFF
CDSOFF
35
30
25
20
15
10
5
0
CAPACITANCE (pF)
V+ = +15V, V- = -15V
VIN = 3VRMS, VA = 3V
RL = 100Ω
RL = 1kΩ
RL =
IN OUT
VIN 1kΩ
VO
OFF ISOLATION = 20LOG VIN
VO
FREQUENCY (Hz) 10M1M100K10K
140
120
100
80
60
40
20
0
OFF ISOLATION (dB)
FREQUENCY (Hz) 10M1M100K10K
140
120
100
80
60
40
20
0
CROSSTALK (dB)
V+ = +15V, V- = -15V
VIN = 3VRMS, VA = 3V
RL = 1kΩ
IN OUT
VIN
VO1
CROSSTALK = 20LOG VO2
VO1
VO2
RL = 1kΩ
9-89
HI-201HS
Test Circuit
FIGURE 20. SWITCHING TEST CIRCUIT (tON, tOFF1, tOFF2)
Switching Characteristics
Typical delay, tON, tOFF, settling time and switching transients in this circuit. If RL or CL is increased, there will be correspond-
ing increases in rise and/or fall RC times..
FIGURE 21A.
FIGURE 21B.
FIGURE 21. SWITCHING CHARACTERISTICS vs INPUT VOLTAGE
VO
3
1
LOGIC
INPUT
VIN = +10V
RL
1kΩCL
35pF
SWITCH
OUTPUT
V+ = +15V
13
V- = -15V
4
SWITCH
INPUT
GND
VO = VIN RL
RL + RON
2
5
VA
HI-201HS
CL INCLUDES CFIXTURE + CPROBE
VO
LOGIC
INPUT
NRL
1kΩCL
35pF
V+ = +15V
V- = -15V
GND
VA
HI-201HS
OUT
3
2
1
0
tO
LOGIC INPUT (V)
LOGIC INPUT
9-90
HI-201HS
22A. VIN = +10V 22B. VIN = +5V
22C. VIN = 0V 22D. VIN = -5V
22E. VIN = -10V
FIGURE 22. VO - OUTPUT SWITCHING WAVEFORMS
Switching Characteristics
(Continued)
+10
+5
0
tO
+5
0
tO
+5
0
+5
tO
0
-5
tO
-10
-5
0
tO
9-91
HI-201HS
Application Information
Logic Compatibility
The HI-201HS is TTL compatible. Its logic inputs (Pins 1, 8,
9, 16) are designed to react to digital inputs which exceed a
fixed, internally generated TTL switching threshold. The
HI-201HS can also be driven with CMOS logic (0V-15V),
although the switch performance with CMOS logic will be
inferior to that with TTL logic (0V-5V).
The logic input design of the HI-201HS is largely responsible
for its fast switching speed. It is a design which features a
unique input stage consisting of complementary vertical
PNP and NPN bipolar transistors. This design differs from
that of the standard HI-201 product where the logic inputs
are MOS transistors.
Although the new logic design enhances the switching
speed performance, it also increases the logic input leakage
currents. Therefore, the HI-201HS will exhibit larger digital
input leakage currents in comparison to the standard HI-201
product.
Charge Injection
Charge injection is the charge transferred, through the inter-
nal gate-to-channel capacitances, from the digital logic input
to the analog output. To optimize charge injection perfor-
mance for the HI-201HS, it is advisable to provide a TTL
logic input with fast rise and fall times.
If the power supplies are reduced from ±15V, charge injec-
tion will become increasingly dependent upon the digital
input frequency. Increased logic input frequency will result in
larger output error due to charge injection.
Power Supply Considerations
The electrical characteristics specified in this data sheet are
guaranteed for power supplies ±VS = ±15V. Power supply volt-
ages less than ±15V will result in reduced switch performance.
The following information is intended as a design aid only.
Single Supply
The switch operation of the HI-201HS is dependent upon an
internally generated switching threshold voltage optimized for
±15V power supplies. The HI-201HS does not provide the
necessary internal switching threshold in a single supply sys-
tem. Therefore, if single supply operation is required, the
HI-300 series of switches is recommended. The HI-300 series
will remain operational to a minimum +5V single supply.
Switch performance will degrade as power supply voltage is
reduced from optimum levels (±15V). So it is recommended
that a single supply design be thoroughly evaluated to
ensure that the switch will meet the requirements of the
application.
For Further Information See Application Notes 520, 521,
531, 532, 543 and 557.
POWER SUPPLY
VOLTAGES SWITCH PERFORMANCE
±12 < ±VS±15V Minimal Variation
±VS < ±12V Parametric variation becomes increas-
ingly large (increased ON resistance,
longer switching times).
±VS < ±10V Not Recommended.
±VS > ±16V Not Recommended.
9-92
HI-201HS
Die Characteristics
DIE DIMENSIONS:
2440µm x 2860µm x 485µm± 25µm
METALLIZATION:
Type: CuAl
Thickness: 16kű2kÅ
GLASSIVATION:
Type: Nitride Over Silox
Nitride Thickness: 3.5kű 1kÅ
Silox Thickness: 12kű 2kÅ
WORST CASE CURRENT DENSITY:
9.5 x 104A/cm2
Metallization Mask Layout
HI-201HS
A1 A2
OUT2
IN2
V+
IN3
OUT3
A3A4
OUT4
IN4
GND
V-
IN1
OUT1
