© Semiconductor Components Industries, LLC, 2012
March, 2017 − Rev. 5 1Publication Order Number:
DTC123J/D
MUN2235, MMUN2235L,
MUN5235, DTC123JE,
DTC123JM3, NSBC123JF3
Digital Transistors (BRT)
R1 = 2.2 kW, R2 = 47 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components b y integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector−Base Voltage VCBO 50 Vdc
Collector−Emitter Voltage VCEO 50 Vdc
Collector Current − Continuous IC100 mAdc
Input Forward Voltage VIN(fwd) 12 Vdc
Input Reverse Voltage VIN(rev) 6 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
PIN CONNECTIONS
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet
.
ORDERING INFORMATION
SC−75
CASE 463
STYLE 1
MARKING DIAGRAMS
XXX = Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SC−59
CASE 318D
STYLE 1
SOT−23
CASE 318
STYLE 6
SC−70/SOT−323
CASE 419
STYLE 3
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
XX MG
G
1
1
XXX MG
G
XX MG
G
1
XX M
1
X M
XX M
1
1
www.onsemi.com
MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3
www.onsemi.com
2
Table 1. ORDERING INFORMATION
Device Part Marking Package Shipping†
MUN2235T1G 6M SC−59
(Pb−Free) 3000 / Tape & Reel
MMUN2235LT1G, NSVMMUN2235LT1G* AA2 SOT−23
(Pb−Free) 3000 / Tape & Reel
MUN5235T1G, SMUN5235T1G* 8M SC−70/SOT−323
(Pb−Free) 3000 / Tape & Reel
DTC123JET1G, NSVDTC123JET1G* 8M SC−75
(Pb−Free) 3000 / Tape & Reel
DTC123JM3T5G, NSVDTC123JM3T5G* 8M SOT−723
(Pb−Free) 8000 / Tape & Reel
NSBC123JF3T5G V SOT−1123
(Pb−Free) 8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
1251007550250−25−50
0
50
100
150
200
250
300
PD, POWER DISSIPATION (mW)
150
(1) (2) (3) (4) (5)
(1) SC−75 and SC−70/SOT323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm2, 1 oz. copper trace
(5) SOT−723; Minimum Pad
MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3
www.onsemi.com
3
Table 2. THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
THERMAL CHARACTERISTICS (SC−59) (MUN2235)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD230
338
1.8
2.7
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 540
370 °C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2) RqJL 264
287 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SOT−23) (MMUN2235L)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD246
400
2.0
3.2
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 508
311 °C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2) RqJL 174
208 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5235)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD202
310
1.6
2.5
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 618
403 °C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2) RqJL 280
332 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SC−75) (DTC123JE)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD200
300
1.6
2.4
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 600
400 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SOT−723) (DTC123JM3)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD260
600
2.0
4.8
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 480
205 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3
www.onsemi.com
4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBC123JF3)
Total Device Dissipation
TA = 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
PD254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4) RqJA 493
421 °C/W
Thermal Resistance, Junction to Lead (Note 3) RqJL 193 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0) IEBO − − 0.2 mAdc
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V) hFE 80 140 −
Collector *Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 1.0 mA) VCE(sat) − − 0.25 Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA) Vi(off) − 0.6 0.5 Vdc
Input Voltage (on)
(VCE = 0.3 V, IC = 5.0 mA) Vi(on) 1.1 0.8 − Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)VOL − − 0.2 Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)VOH 4.9 − − Vdc
Input Resistor R1 1.5 2.2 2.9 kW
Resistor Ratio R1/R20.038 0.047 0.056
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3
www.onsemi.com
5
TYPICAL CHARACTERISTICS
MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3
f = 10 kHz
IE = 0 A
TA = 25°C
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0010 20304050
75°C
25°C
−25°C
Figure 2. VCE(sat) vs. ICFigure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
Vin, INPUT VOLTAGE (V)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 6. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100 IC, COLLECTOR CURRENT (mA) 10
0
101
1000
10
1
0.001
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
C
ob
, CAPACITANCE (pF)
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (V)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°CTA = −25°C
0.01
0.01
0.1
30
100
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3
www.onsemi.com
6
TYPICAL CHARACTERISTICS
NSBC123JF3
150°C
25°C
−55°C
Figure 7. VCE(sat) vs. ICFigure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
Vin, INPUT VOLTAGE (V)VR, REVERSE BIAS VOLTAGE (V)
Figure 11. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100 IC, COLLECTOR CURRENT (mA) 10
0
101
1000
10
1
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
50403020100
C
ob
, CAPACITANCE (pF)
100
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (V)
0.01
0.01
0.1
30
100
f = 10 kHz
IE = 0 A
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
−55°C
25°C150°C
2.4
2
1.6
1.2
0.8
0.4
0
25°C
−55°C
150°C
0 0.5 1 1.5 2 2.5
3
100
25°C
150°C
−55°C
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42226B
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SOT−23 (TO−236)
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
SC−59
CASE 318D−04
ISSUE H
DATE 28 JUN 2012
SCALE 2:1
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. N.C.
3. ANODE
STYLE 5:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE/CATHODE
e
A1
b
A
E
D
2
3
1
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031 ǒmm
inchesǓ
SCALE 10:1
XXX MG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package*
GENERIC
MARKING DIAGRAM
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b0.35 0.43 0.50 0.014
c0.09 0.14 0.18 0.003
D2.70 2.90 3.10 0.106
E1.30 1.50 1.70 0.051
e1.70 1.90 2.10 0.067
L0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
HE
(*Note: Microdot may be in either location)
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42664B
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SC−59
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
SC−70 (SOT−323)
CASE 419−04
ISSUE N
DATE 11 NOV 2008
SCALE 4:1
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 1:
CANCELLED
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 6:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
XX MG
G
XX = Specific Device Code
M = Date Code
G= Pb−Free Package
GENERIC
MARKING DIAGRAM
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42819B
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SC−70 (SOT−323)
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
SC−75/SOT−416
CASE 463−01
ISSUE G
DATE 07 AUG 2015
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
−E−
−D−
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
3
2
1
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
XX M
G
XX = Specific Device Code
M = Date Code
G= Pb−Free Package
1
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.061 0.063 0.065
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
HE
L0.10 0.15 0.20
1.50 1.60 1.70
0.004 0.006 0.008
0.060 0.063 0.067
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
12
3
1.803
0.071
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB15184C
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SC−75/SOT−416
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
SOT−1123
CASE 524AA
ISSUE C
DATE 29 NOV 2011
SCALE 8:1 NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
GENERIC
MARKING DIAGRAM*
X = Specific Device Code
M = Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DIM MIN MAX
MILLIMETERS
A0.34 0.40
b0.15 0.28
c0.07 0.17
D0.75 0.85
E0.55 0.65
0.95 1.05
L0.185 REF
HE
D
E
c
A
−Y−
−X−
HE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
X M
e
b1 0.10 0.20
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
1
2
3
0.35 0.40
TOP VIEW
SIDE VIEW
3X
BOTTOM VIEW
L2
L
3X
DIMENSIONS: MILLIMETERS
1.20
2X
0.26
3X 0.34
PACKAGE
OUTLINE
b
2X b1
e
0.08 XY
L2 0.05 0.15
0.20
0.38
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON23134D
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SOT−1123, 3−LEAD, 1.0X0.6X0.37, 0.35P
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
SOT−723
CASE 631AA−01
ISSUE D
DATE 10 AUG 2009
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
−Y−
−X−
X0.08 Y
2X
E
12
3
XX = Specific Device Code
M = Date Code
GENERIC
MARKING DIAGRAM*
SCALE 4:1
XX M
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
1
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
L2 0.15 0.20 0.25
0.29 REF
3X
L2
3X
1
2X
TOP VIEW
BOTTOM VIEW
SIDE VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
0.40
1.50
2X
PACKAGE
OUTLINE
0.27
2X
0.52
3X 0.36
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON12989D
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SOT−723
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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