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BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138K Rev. 1.3.0 1

May 2013

BSS138K

N-Channel Logic Level Enhancement Mode Field Effect

Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching S peed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Pb Free / RoHS Compliant

• Green Compound

• ESD HBM = 2000 V as per JEDEC A114A; ESD CDM = 2000 V as per JEDEC C101C

Absolute Maximum Ratings(1)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Note:

1. These ratings are limiting values above which the serviceability of any semiconductor device ma ybe impaired.

Thermal Characteristics

Note:

2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

Package Marking and Ordering Information

Symbol Parameter Value Units

VDSS Drain-Source Voltage 50 V

VGSS Gate-Source Voltage ±12 V

ID Drain Current Continuous 0.22 A

Pulsed 0.88

TJOperating Junction Temperature Range -55 to +150 °C

TSTG Storage Temperature Range -55 to +150 °C

Symbol Parameter Value Units

PDTotal Device Dissipation 350 mW

Derating above TA = 25°C 2.8 mW/°C

RθJA Thermal Resistance, Junction to Ambient(2) 350 °C/W

Device Marking Device Reel Size Tape Width Quantity

SK BSS138K 7” 8 mm 3000 units

SOT - 23

Marking : SK

BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138K Rev. 1.3.0 2

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units

Off Characteristic s

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 μA50 V

BVDSS

Breakdown Voltage

Temperature Coefficient ID = 250 μA, Referenced to 25°C0.11 V/°C

IDSS Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0 V 0.1 μA

IGSS Gate-Body Leakage VGS = ±12 V, VDS = 0 V ±1

μAVGS = ±10 V, VDS = 0 V ±0.5

VGS = ±5 V, VDS = 0 V ±0.05

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA0.6 1.2V

VGS(th)

Gate Threshold Voltage

Temperature Coefficient ID = 1 mA, Referenced to 25°C-1.4mV/°C

RDS(ON) Static Drain-Source

On-Resistance

VGS = 1.8V, ID = 50 mA, 2.5

ΩVGS = 2.5 V, ID = 50 mA 2.0

VGS = 5V, ID = 50 mA 1.6

ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 0.2 A

gFS Forward Transconductance VDS = 10 V, ID = 200 mA 200 mS

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

Coss Output Capacita nce 9.75 pF

Crss Reverse Transfer Capacit ance 5.2

RGGate Resistance VDS = 5 V, VGS = 10 mV 281 Ω

Switching Characteristics

tD(ON) Turn- On Delay Ti me

VDD = 30 V, ID = 0.29 A,

VGS = 10 V, RGEN = 6 Ω

trTurn-On Rise Time 5

tD(OFF) Turn-Off Delay Time 60

tfTurn-Off Fall Time 35

QgTotal Gate Change VDS = 25 V, ID = 0.2 A,

VGS = 10 V, IG = 0.1 mA

2.4 nCQgs Gate-Source Change 0.5

Qgd Gate-Drain Change 0.5

Drain-Source Diode Characterist ics and Maximum Ratings

Vsd Drain-Source Diode

Forward Voltage VGS = 0 V, IS = 115 mA 1.2 V

BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138K Rev. 1.3.0 3

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation wi th Gate

Voltage and Drain Current

Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-Source

Voltage

Figure 5. Transfer Characteristics Figure 6. Gate T h r e s h o ld V a r i a t i o n wi t h Tem pe r a t ur e

0246810

0.0

0.5

1.0

1.5

2.0

VGS = 10V

ID. DRAIN-SOURCE CURRENT(A)

VDS. DRAIN-SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0

0.75

1.00

1.25

1.50

1.75

2.00

(Ω)

5V 6V

10V

4V 4.5V

VGS = 3V

RDS(on),

DRANI-SOURCE ON-RESISTANCE

ID. DRAIN-SOURCE CURRENT(A)

-50 0 50 100 150

0.5

1.0

1.5

2.0

2.5

(Ω)

VDS = 10V

ID = 500 mA

RDS(on)

DRANI-SOURCE ON-RESISTANCE

TJ. JUNCTION TEM PERAT URE(oC)

2.02.53.03.54.04.55.05.56.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS = 10V

75(oC) 125(oC) 150(oC)

25(oC)

TJ = -25(oC)

ID. DRAIN-SOURCE CURRENT(A)

VGS. GATE-SOURCE VOLTAG E (V)

-50 0 50 100 150

0.0

0.5

1.0

1.5

ID = 0.25 mA

ID = 1 mA

VDS = VGS

Vth, Gate-Source Threshold Voltage (V)

TJ. JUNCTION TEMPERATURE(oC)

BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138K Rev. 1.3.0 4

Typical Performance Characteristics (Continue)

Figure 7. Reverse Drain Current Variation with

Diode Forward Voltage and Temperature

0.0 0.2 0.4 0.6 0.8 1.0

100

-55oC

VGS = 0 V

150oC

25oC

IS Reverse Drain Current, [mA]

VSD, Body Diode Forward Voltage [V]

BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138K Rev. 1.3.0 5

Physical Dimensions

Figure 8. 3LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)

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LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

SOT-23

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