Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com 1
Specifications subject to change without notice. 8/00A
37–40 GHz GaAs MMIC
Low Noise Amplifier
Features
■Single Bias Supply Operation (5 V)
■3.5 dB Typical Noise Figure at 38 GHz
■13 dB Typical Small Signal Gain
■0.25 µm Ti/Pd/A u Gates
■100% On-Wafer RF, DC and Noise
Figure Testing
■100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA038N3-00
Description
Alpha’s three-stage reactively-matched 37–40 GHz
MMIC low noise amplifier has typical small signal gain of
13 dB with a typical noise figure of 3.5 dB at 38 GHz.
The chip uses Alpha’ s prov en 0.25 µm lo w noise PHEMT
technology, and is based upon MBE la yers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process.
Parameter Condition Symbol Min. Typ.3Max. Unit
Drain Current VD= 5 V IDS 20 27 mA
Small Signal Gain F = 37–40 GHz G 10 13 dB
Noise Figure F = 38 GHz NF 3.5 3.8 dB
Input Return Loss F = 37–40 GHz RLI-12 -6 dB
Output Return Loss F = 37–40 GHz RLO-12 -6 dB
Output Power at 1 dB Gain Compression1F = 38 GHz P1 dB 6 dBm
Thermal Resistance2ΘJC 202 °C/W
Electrical Specifications at 25°C
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic Value
Operating Temperature (TC) -55°C to +90°C
Storage Temperature (TST) -65°C to +150°C
Bias Voltage (VD)6 V
DC
Power In (PIN) 10 dBm
Junction Temperature (TJ) 175°C
Absolute Maximum Ratings
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3.Typical represents the median parameter value across the specified
frequency range for the median chip.