MBR1090CT, MBR10100CT
Vishay General Semiconductor
Document Number: 89125
Revision: 26-Apr-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
Dual Common-Cathode High Voltage Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 2 x 5.0 A
VRRM 90 V, 100 V
IFSM 120 A
VF0.75 V
TJ max. 150 °C
TO-220AB
CASE
PIN 2
PIN 1
PIN 3
1
2
3
TMBS
®
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT
Maximum repetitive peak reverse voltage VRRM 90 100 V
Working peak reverse voltage VRWM 90 100 V
Maximum DC blocking voltage VDC 90 100 V
Maximum average forward rectified current at TC = 105 °C total device
per diode IF(AV) 10
5.0 A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode IFSM 120 A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode EAS 60 mJ
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C per diode IRRM 0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/µs
Operating junction and storage temperature range TJ, TSTG - 65 to + 150 °C
New Product
MBR1090CT, MBR10100CT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89125
Revision: 26-Apr-10
2
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR1090CT MBR10100CT UNIT
Maximum instantaneous forward voltage per diode (1) IF = 5.0 A
IF = 5.0 A
TC = 125 °C
TC = 25 °C VF 0.75
0.85 V
Maximum reverse current per diode at working peak
reverse voltage (2)
TJ = 25 °C
TJ = 100 °C IR 100
6.0
µA
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT
Typical thermal resistance per diode RθJC 4.4 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR10100CT-E3/4W 1.87 4W 50/tube Tube
Figure 1. Forward Current Derating Curve
0
2
4
6
10
050 100 150
8
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
20
60
40
100
80
120
1100
10
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
New Product
MBR1090CT, MBR10100CT
Vishay General Semiconductor
Document Number: 89125
Revision: 26-Apr-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Figure 3. Forward Power Loss Characteristics Per Diode
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Reverse Characteristics Per Diode
01 562
4.0
3.5
3.0
2.5
1.0
0.5
0
2.0
1.5
34
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.8
D = 0.5
D = 1.0
D = tp/T tp
T
0 0.2 1.60.4
100
10
0.1
1
0.6 0.81.0 1.2 1.4
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.01
0.001
0.1
1
10
100
0.0001
200 10040 60 80
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
Figure 6. Typical Junction Capacitance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
101 100
100
1000
10 000
0.1
10
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1 MHz
V
sig
= 50 mVp-p
0.01 10 1001
10
0.1
0.1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
New Product
MBR1090CT, MBR10100CT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89125
Revision: 26-Apr-10
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) MAX.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45) 0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.154 (3.91)
0.148 (3.74)
13
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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