Kwa SGS-THOMSON 2N5190/91/92 Jy MICROELECTRONICS 2N5193/94/95 COMPLEMENTARY SILICON POWER TRANSISTORS a 2N5191, 2N5192, 2N5193 AND 2N5195 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5190, 2N5191 and 2N5192 are silicon epitaxial-base NPN transistors in Jedec SOT-32 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are 2N5193, 2N5194 and 2N5195 respectively. SOT-32 INTERNAL SCHEMATIC DIAGRAM Ca (2) Co (2) (1) (1) B B EO(3) Eo (3) SCOBSEO SC08810 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN 2N5190 2N5191 2N5192 PNP | 2N5193 2N5194 2N5195 Vcso |Collector-Base Voltage (le = 0) 40 60 80 Vv Vceo |Collector-Emitter Voltage (lp = 0) 40 60 80 Vv Veso |Emitter-Base Voltage (Ic = 0) 5 Vv Ic Collector Current 4 A lom Collector Peak Current 7 A lB Base Current 1 A Ptot |Total Dissipation at Tc < 25 C 40 w Tstg Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative. October 1995 1/42N5190/2N5191/2N5192/2N5193/2N5194/2N5195 THERMAL DATA Rthj-case |Thermal Resistance Junction-case Max 3.12 C/W Rthj-amb | Thermal Resistance Junction-ambient Max 100 C/W ELECTRICAL CHARACTERISTICS (Tease = 25 C unlessotherwise specified) Symbol Parameter Test Conditions Min. | Typ. Max. Unit IcBo Collector Cut-off Vcp = rated Vcso 0.1 mA Current (le = 0) IcEx Collector Cut-off Voce = rated Vceo 0.1 mA Current (Vee =-1.5V) |Vce =rated Veco Te = 125C 2 mA IcEo Collector Cut-off Voce = rated Vceo 1 mA Current (Ip = 0) leBo Emitter Cut-off Current |Vep = 5 V 1 mA {Ic = 0) VcEo(sus)* | Collector-Emitter Ic = 100 mA Sustaining Voltage for 2N5190/2N5193 40 Vv for 2N5191/2N5194 60 V for 2N5192/2N5195 80 Vv VoceE(sat)* | Collector-Emitter Ic =1.5A Ip=O0.15A 0.6 V Saturation Voltage Ilc=4A IB=1A for 2N5190/2N5191/2N5192 1.4 Vv for 2N5193/2N5194/2N5195 1.2 Vv VBeE* Base-Emitter Voltage Ic=1.5A VcE=2V 1.2 Vv hre* DC Current Gain lc=1.5A Veep =2V for 2N5190/2N5193 25 100 for 2N5191/2N5194 25 100 for 2N5192/2N5195 20 80 Ic=4A VcE=2V for 2N5190/2N5193 10 for 2N5191/2N5194 10 for 2N5192/2N5195 7 fr Transition frequency Ic=1A VeceE=10V 2 MHz Pulsed: Pulse duration = 300 pis, dutycycle 1.5% For PNP types voltage and current values are negative. 2/4 MICROELECTROMICS2N5190/2N5191/2N5192/2N5193/2N5194/2N5195 SOT-32 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 bt 0.49 0.75 0.019 0.030 Cc 2.4 2.7 0.04 0.106 cl 1.2 0.047 D 15.7 0.618 e 2.2 0.087 e3 4.4 0.173 F 3.8 0.150 G 3 3.2 0.118 0.126 H 2.54 0.100 C A i r o Le i. cl 8 | P 1b AL bt e 0016114 3/4 MITROELECTROMICS2N5190/2N5191/2N5192/2N5193/2N5194/2N5195 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compments in life supportdevices or systems without express written approval of SGS-THOMSON Microelectaics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectrorics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 AS] Sicpon scmoncs