©2003 Fairchild Semiconductor Corporation Rev. C2, July 2003
MJD45H11
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse T est: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage - 80 V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 8 A
ICP Collector Current (Pulse) - 16 A
PC Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (Ta=25°C) 1.75 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 - 80 V
ICEO Collector Cut-off Current VCE = - 80V, IB = 0 - 10 µA
IEBO Em i tt e r C u t-o ff C u rr e n t VBE = - 5V, IC = 0 - 50 µA
hFE *DC Current Gain VCE = - 1V, IC = - 2A
VCE = - 1V, IC = - 4A 60
40
VCE(sat) *Collector-Emitter Saturation Voltage IC = - 8A, IB = - 0.4A - 1 V
VBE(on) *Base-Emitter Saturation Voltage IC = - 8A, IB = - 0.8A - 1.5 V
fT Current Gain Bandwidth Product VCE= - 10A, IC = - 0.5A 40 MHz
Cob Collector Capacitance VCB = - 10V, f = 1MHz 230 pF
tON T urn On Time IC = - 5A
IB1= - IB2 = - 0.5A 135 ns
tSTG Storage Time 500 ns
tF Fall Time 100 ns
MJD45H11
General Purpos e Power and Switchi ng Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK: “-I” Suffix)
• Electrically Similar to Popular MJE45H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
©2003 Fairchild Semiconductor Corporation
MJD45H11
Rev. C2, July 2003
Typical Characteristics
Figure 1. DC current Gain Figure 2. Safe Operating Area
Figure 3. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000 VCE = -1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
-100
5ms
100µs
500µs
1ms
DC
ICP(max)
IC(max)
IC[A], COLLECTOR CURRENT
VCE[V], COL LECTOR- EMI TTE R VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Dimensions
MJD45H11
Dimensions in Millimeters
Rev. C2, July 2003
6.60 ±0.20
2.30 ±0.10
0.50 ±0.10
5.34 ±0.30
0.70 ±0.20
0.60 ±0.20
0.80 ±0.20
9.50 ±0.30
6.10 ±0.20
2.70 ±0.20 9.50 ±0.30
6.10 ±0.20
2.70 ±0.20
MIN0.55
0.76 ±0.10 0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
6.60 ±0.20
0.76 ±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89 ±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91 ±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
©2003 Fairchild Semiconductor Corporation
©2003 Fairchild Semiconductor Corporation Rev. C2, July 2003
MJD45H11
Package Dimensi ons (Continued)
Dimensions in Millimeters
Rev. C2, July 2003©2003 Fairchild Semiconductor Corporation
6.60
±0.20
0.76
±0.10
MAX0.96
2.30TYP
[2.30±0.20] 2.30TYP
[2.30±0.20]
0.60
±0.20
0.80
±0.10
1.80
±0.20
9.30
±0.30
16.10
±0.30
6.10
±0.20
0.70
±0.20
5.34
±0.20
0.50
±0.10
0.50
±0.10
2.30
±0.20
(0.50) (0.50)(4.34)
I-PAK
©2003 Fairchild Semiconductor Corporation Rev. I3
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As used herein:
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result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
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