UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R206-012,A
GENERAL PURPOSE APPLIATION
FEATURES
*Collector-Emitter Voltage: VCEO=40V
*Collector Dissipation: Pc(max)=350mW
*Complementary to MMBT3906
MARKING
SOT-23
1
2
3
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 40 V
Emitter-base voltage VEBO 6 V
Collector current Ic 200 mA
Collector dissipation Pc 350 mW
Junction Temperature Tj 150
°C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-off Current ICEX VCE=30V, VEB=3V 50 nA
Base Cut-off Current IBL VCE=30V, VEB=3V 50 nA
Collector-base breakdown voltage VCBO Ic=10µA,IE=0 60 V
Collector-emitter breakdown voltage
(note)
VCEO Ic=1mA,IB=0 40 V
Emitter-base breakdown voltage VEBO IE=10µA, Ic=0 6 V
DC current gain (note) hFE1
hFE2
hFE3
hFE4
hFE5
VCE=1V,Ic=0.1mA
VCE=1V,Ic=1mA
VCE=1V,Ic=10mA
VCE=1V,Ic=50mA
VCE=1V,Ic=100mA
40
70
100
60
30
300
Collector-emitter saturation voltage
(note)
VCE(sat)1
VCE(sat)2
Ic=10mA,IB=1mA
Ic=50mA,IB=5mA
0.2
0.3
V
1A
UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R206-012,A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Base-emitter saturation voltage
(note)
VBE(sat)1
VBE(sat)2
Ic=10mA,IB=1mA
Ic=50mA,IB=5mA
0.65 0.85
0.95
V
Current gain bandwidth product fT VCE=20V, Ic=10mA, f=100MHz 300 MHz
Output Capacitance Cob VCB=5V,IE=0, f=1MHz 4 pF
Turn on time tON Vcc=3V, VBE=0.5V, Ic=10mA,
IB1=1mA
70 ns
Turn off time tOFF IB1=1B2=1mA 250 ns
Note: Pulse test: PW<=300µs, Duty Cycle<=2%
