UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc(max)=350mW *Complementary to MMBT3906 2 1 MARKING 3 1A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Ic Pc Tj TSTG 60 40 6 200 350 150 -55 ~ +150 V V V mA mW C C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS(Ta=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector Cut-off Current Base Cut-off Current Collector-base breakdown voltage Collector-emitter breakdown voltage (note) Emitter-base breakdown voltage DC current gain (note) ICEX IBL VCBO VCEO VCE=30V, VEB=3V VCE=30V, VEB=3V Ic=10A,IE=0 Ic=1mA,IB=0 VEBO hFE1 hFE2 hFE3 hFE4 hFE5 VCE(sat)1 VCE(sat)2 IE=10A, Ic=0 VCE=1V,Ic=0.1mA VCE=1V,Ic=1mA VCE=1V,Ic=10mA VCE=1V,Ic=50mA VCE=1V,Ic=100mA Ic=10mA,IB=1mA Ic=50mA,IB=5mA Collector-emitter saturation voltage (note) UTC UNISONIC TECHNOLOGIES MIN TYP MAX UNIT 50 50 nA nA V V 60 40 6 40 70 100 60 30 V 300 0.2 0.3 CO., LTD. V 1 QW-R206-012,A UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS MIN Base-emitter saturation voltage (note) Current gain bandwidth product Output Capacitance Turn on time VBE(sat)1 VBE(sat)2 fT Cob tON Ic=10mA,IB=1mA Ic=50mA,IB=5mA VCE=20V, Ic=10mA, f=100MHz VCB=5V,IE=0, f=1MHz Vcc=3V, VBE=0.5V, Ic=10mA, IB1=1mA IB1=1B2=1mA 0.65 Turn off time tOFF Note: Pulse test: PW<=300s, Duty Cycle<=2% UTC UNISONIC TECHNOLOGIES TYP MAX UNIT 0.85 0.95 V 300 4 70 MHz pF ns 250 ns CO., LTD. 2 QW-R206-012,A