Philips Semiconductors Product Specification eee ee eee eens PowerMOS transistor BUK445-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL | PARAMETER MAX. MAX. UNIT field-effect power transistor ina plastic full-pack envelope. BUK445 -200A | -200B The device is intended for use in Vos Drain-source voltage 200 200 Vv Switched Mode Power Supplies Ip Drain current (DC) 76 7 A (SMPS), motor control, welding, Prot Total power dissipation 30 30 Ww DC/DC and AC/DC converters, and T, Junction temperature 150 150 C in general purpose switching Rosiony Drain-source on-state 0.23 0.28 Q applications. resistance PINNING - SOT186 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d case} () | * |gate yo : | /| \ 2 {drain | | fl 4] | 3 |source | ] [/ 3 Moe - / case |isolated | 4 slat 8 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL | PARAMETER CONDITIONS MIN. MAX. UNIT Vos Drain-source voltage - - 200 Vv Voor Drain-gate voltage Reg = 20 KQ - 200 Vv Ves Gate-source voltage - - 30 Vv -200A -200B Ip Drain current (DC) Ths = 25 C - 7.6 7 A Ib Drain current (DC) Ths = 100 C - 4.8 4.4 A lon Drain current (pulse peak value) |T,,= 25C - 30 28 A Pret Total power dissipation Ths = 25C - 30 Ww stg Storage temperature - -55 150 C T, Junction Temperature - - 150 *C THERMAL RESISTANCES SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Rtn crs Thermal resistance junction to | with heatsink compound - - 4.17 | KAV heatsink Rin pa Thermal resistance junction to - 55 - KAV ambient April 1993 664 Rev 1.100Philips Semiconductors Product Specification PowerMOS transistor BUK445-200A/B STATIC CHARACTERISTICS T,, = 25 C unless otherwise specified SYMBOL |PARAMETER. CONDITIONS MIN. | TYP. | MAX. | UNIT Vierioss Drain-source breakdown Ves = OV; tp = 0.25 mA 200 - - Vv voltage Vesiro} Gate threshold voltage Vos = Vesi Ib = 1 MA 2.1 3.0 4.0 Vv loss Zero gate voltage drain current | Vpg = 200 V; Ves = 0 V; T, = 25 C - 1 10 LA pss Zero gate voltage drain current | Vo, = 200 V: Veg = OV; T, =126 C - 0.1 1.0 mA less Gate source leakage current Veg = +30 Vv: Vos = OV - 10 100 nA Rosion Drain-source on-state Ves = 10 V; BUK445-200A - 0.2 0.23 Q resistance Ip=7A BUK445-200B|_ - 0.22 | 0.28 Q DYNAMIC CHARACTERISTICS T,, = 25 C unless otherwise specified SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Os Forward transconductance Vos = 25 Vi b=7A 6 8.4 - S Coss Input capacitance Veg = 0 Vi Vog = 25 Vi f= 1 MHz - 1400 |} 1750 | pF Coss Output capacitance - 190 250 pF Crs Feedback capacitance - 55 80 pF teon Turn-on delay time Vpp = 30 V3 1, =3 A; - 18 30 ns t, Turn-on rise time Vos = = = 10 V; Res = 50 - 35 60 ns ta of Turn-off delay time Rogen = 50 - 85 120 ns t, Turn-off fall time - 35 50 ns Ly Interna! drain inductance Measured from drain lead 6 mm - 45 - nH from package to centre of die L. Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad ISOLATION LIMITING VALUE & CHARACTERISTIC T,5 = 25 C unless otherwise specified SYMBOL {PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Visor Repetitive peak voltage from all |R.H. < 65% ; clean and dustfree - 1500 Vv three terminals to external heatsink Cisor Capacitance from T2 to external | f = 1 MHz - 12 - pF heatsink REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Ts; = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT lon Continuous reverse drain - - - 7.6 A current lonm Pulsed reverse drain current - - - 30 A V0 Diode forward voltage [;-=7.6A;Veg=0V - 1.0 1.5 V ty Reverse recovery time |. = 7.6 A; -dl,/dt = 100 A/us; - 150 - ns Q, Reverse recovery charge Veg = OV; Va=30V - 1.3 - uc April 1993 665 Rev 1.100Philips Semiconductors Product Specification PowerMOsS transistor BUK445-200A/B AVALANCHE LIMITING VALUE Ths = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Woss Drain-source non-repetitive Ilp=14A;Vpp $ 100 V; - - 100 mJ unclamped inductive turn-off Veg = 10 V; Res = 502 energy 120 Normalised Power Derating ID/A 110 100 90 80 te 70 60 50 40 q 30 20 10 Q 0.7 0 20 40 60 89 100 120 140 7 10 100 1000 Tas VDS /V Fig.1. Normalised power dissipation. Fig.3. Safe operating area. T,,, = 25 C PD% = 100-Pp/Pp 06 c= (Th) Ip & lou = (Vos); lpy single pulse; parameter t, iD% Normalised Current Derating 120 110 100 90 80 70 60 50 40} 30 20 10 0 CHE ithe: * TET. 0 20 40 60 89 100 120 140 OOO oF 1E-05 1E-09 1-01 . 1E+01 Ths/ GC t/s Fig.2. Normalised continuous drain current. Fig.4. Transient thermal impedance. ID% = 100-1/lp 25 - = {T,,); conditions: Vag2 10 V Zin ins = f(t); parameter D = t/T April 1993 666 Rev 1.100Philips Semiconductors Product Specification PowerMOS transistor BUK445-200A/B ID/A 30 20 10 0 oO 2 4 6 8&8 10 12 14 16 18 20 vos/V Fig.5. Typical output characteristics, T, = 25 C. Ip = {(Vps); parameter Vas oO 4 & 12 16 20 24 28 iD/A Fig.8. Typical transconductance, T,=25 C. Oe = Mlp); Conditions: Vpg = 25 V 1d 0.8 0.6 0.4 0.2 oO 4 8 12 16 20 24 28 IDSA Fig.6. Typical on-state resistance, T,= 25 C. Fosrony = (lp); parameter Ves ad a Normatised RDS(ON) = KT}) 2 -60 -40 -20 0 20 40 > 60 80 100 120 140 T/C Fig.9. Normalised drain-source on-state resistance. a= RosiowRostonies c= tT); lp = 7A; Veg = 10 V Q 2 4 6 8 10 VGS/V Fig.7. Typical transfer characteristics. ly = f(Vas) | conditions: Vog = 25 V; parameter T, 4 60 -40 -20 O 20 40 60 80 100 126 140 Hee Fig.10. Gate threshold voltage. Vasrro) = f(T); conditions: Ip = 1 MA; Vos = Vas April 1993 Rev 1.100Philips Semiconductors PowerMOsS transistor Product Specification BUK445-200A/B SUB-THRESHOLD CONDUCTION TE-G1 1E+02 TE-03 TE-04 1E-05 TE-OB 0 1 2 3 4 VGS/IV Fig.11. Sub-threshold drain current. lp = {Vos conditions: T, = 25 C; Vog = Vas IF/A 0 20 0 0 vsos/ Fig.14. Typical reverse diode current. Ip =#(Vsps); conditions: Vag= 0 V; parameter T,_ 0 20 40 VDS /V Fig.12. Typical capacitances, C,,,, Coss, Ciss- C = (Vp); conditions: Vag = 0 V; f = 1 MHz WDSS% 120 110 100 90 30 + 70 60 50 40 30 20 10 0 20 40 60 80 Ths/ C ,100 120 140 Fig.15. Normalised avalanche energy rating. Woes% = H{T,,.); conditions: lp = 14.A 1 o a 1 20 30 QG ine Fig.13. Typical turn-on gate-charge characteristics. Veg = (Q,); conditions: Ip = 14 A; parameter Vos | ra vpD L, . [ L f a 4) | vps NW a 4 vas oN i rv ft | -ID/100 5 | Le hg & ) nur, oe 7 a a Ror | AGS \ ! shunt Ly! Fig.16. Avalanche energy test circuit. Wosg = 0.5 - LU, - BV ygs/(BV ngs Vin) April 1993 668 Rev 1.100