MOTOROLA SC {XSTRS/R FH hb DE Jeseresy O0a19b4 i Fy g6p 81964 OD THIS MAXIMUM RATINGS ~ Rating Symbol Value Unit BFS17 Collector-Emitter Voltage VCEO 15 Vde Collector-Base Voltage Vcgo 25 Vde CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) _367254 MOTOROLA SC (XSTRS/R F) THERMAL CHARACTERISTICS Char Istic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw 3 Collector Ta = 26C Derate above 25C 18 mWwrc SE Thermal Resistance Junction to Ambient Rasa 556 CcimWw 1 zs ease! Total Device Dissipation Pp 300 mw 2 ad ~ , Alumina Substrate,** Ta = 25C 2 Emitter Derate above 25C 2.4 mWwPC Thermal Resistance Junction to Ambient RaJA A417 CimW Junction and Storage Temperature Ty Tstg 160 c *FR5 = 1.0 x 0.75 x 0.62 in. RF TRANSISTOR **Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. DEVICE MARKING BFS17 = Et | NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.] [ Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ViBRICEO 15 - Vde (Ic = 10 mA) Coliector-Base Breakdown Voltage V(BRICBO 25 Vde {Ic = 100 A) Collector Cutoff Current IceO _ 25 nA (Vce = 10 V) Collector Cutoff Current icBO _ 25 nA (Vogp = 10 V) Emitter Cutoff Current \EBO _ 100 BA (Veg = 4.0 V) ON CHARACTERISTICS DC Current Gain hee _ (Ic = 2.0 mA, VCE = 1.0 V) 20 150 (ic = 25 mA, Vce = 1.0 V) 20 _ , Collector-Emitter Saturation Voltage VcE\(sat} 0.4 Vv (I = 10 mA, Ip = 1.0 mA) Base-Emitter Saturation Voltage VBE(sat} _ 1.0 v {Ic = 10 mA, Ig = 1.0 mA) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT GHz llc = 2.0 mA, Vcg = 5.0 V, f = 500 MHz) 1.0 _ (ic = 25 mA, Voce = 5.0 V, f = 500 MHz} 1.3* _- Output Capacitance ccB _- 1.0* pF (Vop = 10 V, f = 1.0 MHz) Noise Figure NF _ 5.0* | dB (Ic = 2.0 mA, Vcg = 5.0 V, Rg = 50 9, f = 30 MHz) *Typ MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-29MOTOROLA SC {XSTRS/R FI 6367254 MOTOROLA SC (XSTRS/R F) 4b pe Buaezasy 0081965 3 i 96D 81965 OD Tr 3G ee MAXIMUM RATINGS , Rating Symbol Value Unit BSR56 : Drain-Source Voltage +Vos 40 Vv BSR57 Drain-Gate Voltage VpG 40 v Gate-Source Voltage Ves 40 Vv BSR58 Forward Gate Current laity 50 mA CASE 318-02/03, STYLE 10 THERMAL CHARACTERISTICS SOT-23 (TO-236AA/AB) Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw 2 Source Ta = 25C 3 i Oerate above 25C 1.8 mWwrc 3 Thermal Resistance Junction to Ambient Rea 556 CimW i se Gate Tatal Device Dissipation Pp 300 mw 2 i Alumina Substrate,** Ta = 25C 1 Drain Derate above 25C 2.4 mWFC Thermal Resistance Junction to Ambient Raa 417 "CimW JFET ; Junction and Storage Temperature Ty, Tstg 150 c SWITCHING "FR-5 = 1.0 x 0.76 x 0.62 in. TRANSISTOR \ **Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. N-CHANNEL DEVICE MARKING . | BSR56 = M4; BSR57 = M5; BSR58 = M6 | ELECTRICAL CHARACTERISTICS (Ta, = 25C unless otherwise noted.} Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage V(BRIGSS 40 _ Vde {lg = 1.0 wAdc, Vpg = 0} . Gate-Reverse Current less _ 1.0 nA (Vps = OV, Vag = 20 V) Gate-Source Cutoff Voltage VGS(off} v (Vos = 15 V, Ip = 0.6 nA) BSR56 40 10 BSR57 2.0 6.0 BSR58 0.8 4.0 \ ON CHARACTERISTICS Zero-Gate Voltage Drain Ipss mA (Vps = 15 V, Vas = 0) BSR56 50 BSR57 20 100 BSR58 8.0 80 Drain-Source On Voltage Vpston) Vde {Ip = 20 mA, Veg = 0) BSR56 _ 0.75 (lp = 10 mA, Veg = 0) BSR57 _ 0.5 {Ip = 5.0 mA, Vgg = 9) BSR58 _ 0.4 Static Drain-Source On Resistance 'DS{on} Ohms (Ip = 0 mAdc, Vgg = 0, f = 1.0 kHz) BSRS56 _ 25 BSR57 _ 40 BSR58S _ 60 SWITCHING CHARACTERISTICS Delay Time: Vpp = 10 V; Vgg = 0 td ns (Vasm = 10 V, Ip = 20 mA) BSR56 _ 6.0 (VaGsm = 6.0 V, Ip = 10 mA) BSR57 _ 6.0 (Vaso = 4.0 V, Ip = 5.0 mA) BSR58 _ 10 Rise Time: Vpp = 10 V; Vg@g = 0 tr ns (V6smM = 10-V, ip = 20 mA} BSR56 _ 3.0 (VGsSmM = 6.0 V, ID = 10 mA) BSR57 - 4.0 (Vesm = 4.0V, Ip = 5.0 mA) BSR58 _ 10 Turn-Off Time: Vpp = 10 V: Veg = 0 toff ns : (Vasm = 10V, Ip = 20 mA BSR5G _ 25 : (V@sM = 60 V, Ip = 10 mA} BSR57 _ 50 (VGsm = 4.0 V, Ip = 5.0 mA) BSR58 100 ! MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-30MOTOROLA SC IXSTRS/R FF 4b pe Biuaezesy OO8l4bb 5 i wenn LT eee oe = Frasier [ 63672 54 MOTOROLA sc CXSTRS/R FO S6D 81966 D | BSR56, BSR57, BSR58 s T:-38-25 : 0 = -- t i VesM- ft 200 ns pi td bet off tr : 10% -\- -4+------f- Vo 90% \- f SWITCHING TIMES WAVEFORMS Vpo R BSR56;R = 4640 BSR57;R = 95302 BSR58; R = 19100 oO Vo Pulse Generator ty = te = 1.0 ns = 0.02 Zo = 500 Oscilloscope tr = 0.75 ns Ri = 1 Ma Cj = 2.5 pF MOTOROLA SMALL-SIGNAL SEMICONDUCTORS eR eR ' 3-31MOTOROLA SC {XSTRS/R FF mo tnn est MAXIMUM RATINGS = ~ _ 6367254 MOTOROLA SC (XSTRS/R F). Ab DE Jea67254 OOalib? 7 i * Rating Symbo! Value Unit Collector-Emitter Voltage VcEO 100 Vde Collector-Emitter Voltage Ree = 10 kQ VceER 110 Vde Collector Current Continuous le 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Unit Total Device Dissipation FR-5 Board,* Ta = 25C Derate above 25C Pp 225 1.8 mw mWwPrc Thermal Resistance Junction to Ambient Resa 556 CimWw Total Device Dissipation Alumina Substrate,** Ta = 25C Derate above 25C Pp 300 2.4 mw mWPrc Thermal Resistance Junction to Ambient ReJA CimW Junction and Storage Temperature TJ: Tstg 150 *PR-5 = 1.0 x 0.75 x 0.62 in. *FAlumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING BSS63 = T1 96D 81967 OD fe 3IHC/ BSS63 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) 3 Collector 2 Emitter HIGH VOLTAGE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic OFF CHARACTERISTICS { Symbol! | Min Typ Max Unit Collector-Emitter Breakdown Voltage (lg = 100 pAdc) ViBR)CEO 400 _ ~ Vde Collector-Emitter Breakdown Voltage (ig = 10 pAdce, Ip = 0, Rpe = 10 kQ) V(BR)CER Collector-Base Breakdown Voltage {Ic = 10 zAde, Ig = 0) V(BR)CBO 110 _ _ Vde Emitter-Base Breakdown Voltage {Ie = 10 Adc) V(BR)EBO 6.0 - _ Vde Collector Cutoff Current (Veg = 90 Vdc, Ie = 0) IcBo - - 100 nAde Collector Cutoff Current (VcE = 110 Vde, Rae = 10 kQ) ICER _ - 10 BAdG Emitter Cutoff Current (Veg = 6.0 Vdc, Ic = 0) lEBo - ~ 200 nAde ON CHARACTERISTICS DC Current Gain (I = 10 mAdc, Voce = 1.0 Vdc) (Ic = 25 mAdc, Vcg = 1.0 Vde} hFE 30 _ _ 30 - _ Collector-Emitter Saturation Voltage (ig = 25 mAde, Ip = 2.5 mAdc) VcE(sat) - - 250 mVdc Base-Emitter Saturation Voltage (Ic = 25 mAdc, Ip = 2.5 mAdc) VBE(sat) _ - 900 mVde SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product (Ig = 25 mAds, Vog = 5.0 Vde, f = 35 MHz) fr 50 95 MHz Case Capacitance (le = Ie = 0, Veg = 10 Vde) C 5.0 pF MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-32 ra st ei retest olMOTOROLA SC {XSTRS/R Ft 4b pe ff .au7254 0081564 4 I 6367254 MOTOROLA F) S6DB 81968 B MAXIMUM RATINGS -- T- 35~< oF Rating Symbol Vatue Unit i i Collector-Emitter Voltage VcEO 80 Vde I Collector-Base Voltage . VcBo 4120 Vde BSS64 t Emitter-Base Voltage VEBO 5.0 Vde Collector Current Continuous { 100 mA | & CASE 318-03, STYLE 6 : T- . AA! I THERMAL CHARACTERISTICS SOT-23 (TO-236 AB) Characteristic Symbol Max Unit Tota! Device Dissipation FR-5 Board,* Pp 225 mw Ta = 25C 3 Collector Derate above 25C 1.8 mwWrc \ Thermal Resistance Junction to Ambient Roja 556 CimW 1 5 at bt 4 se Base Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 26C . 2 Derate above 25C 24 mWPC 2 Emitter Thermal Resistance Junction to Ambient ReJA 417 CimW Junction and Storage Temperature Ty. Tst 150 C *FR-5 = 1.0 x 0.75 x 0.62 in. DRIVER TRANSISTOR **Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. NPN SILIGON DEVICE MARKING BSS64 = AM | . ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 80 - Vde (I = 4.0 mA) Collector-Base Breakdown Voltage VIBRICBO 120 _ Vdc {I = 100 pA) Emitter-Base Breakdown Voltage ViBRIEBO 5.0 _- Vde (ig = 100 pA) Collector Cutoff Current IcBO BA (Vce = 90 V) _ 0.1 (Ta = 150C} _- 500 Emitter Cutoff Current {ERO _ 200 nA (VBE = 4.0 V) ON CHARACTERISTICS DC Current Gain KrE 20 - _ (VcE = 1.0 V, IG = 10 mA) ! Collector-Emitter Saturation Voitage VcE(sat) Vde {lc = 4.0 mA, Ip = 400 pA) _ 0.15 (ig = 50 mA, Ip = 15 mA) - 0.2 Forward Base-Emitter Voltage VBE(sat) _ _ _ SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT 60 =_ MHz {ig = 4.0 mA, Vcg = 10 V, f = 35 MHz) Output Capacitance Cob _ 5.0 pF (Voge = 10 V,f = 1.0 MHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS . 3-33