UNISONIC TECHNOLOGIES CO., LTD
2N7002
Power MOSFET
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Copyright © 2010 Unisonic Technologies Co., Ltd QW-R206-037,H
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UTC 2N7002 has been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring up to
400mA DC and can deliver pulsed currents up to 2A. The product
is particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers, and
other switching applications
FEATURES
* High Density Cell Design for Low RDS(ON).
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
SYMBOL
ORDERING INFORMATION
Pin Assignment
Ordering Number Package 1 2 3 4 5 6 Packing
2N7002G-AE2-R SOT-23-3 S G D - - - Tape Reel
2N7002G-AL3-R SOT-323 S G D - - - Tape Reel
2N7002G-AL6-R SOT-363
S1 G1 D2 S2 G2 D1 Tape Reel
MARKING
SOT-23-3/SOT-323 SOT-363
2N7002 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted.)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS ≤1MΩ) VDGR 60 V
Continuous ±20
Gate Source Voltage Non Repetitive(tp<50μs) VGSS ±40 V
Continuous 300
Drain Current Pulsed ID 800 mA
Power Dissipation
Derated Above 25°C PD 200
1.6
mW
mW/°C
Junction Temperature TJ + 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 625 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS V
GS=0V, ID=10μA 60 V
Drain-Source Leakage Current IDSS V
DS=60V, VGS =0V 1 μA
IGSSF V
GS =20V, VDS=0V 100 nA
Gate-Source Leakage Current IGSSR V
GS =-20V, VDS=0V -100 nA
ON CHARACTERISTICS (Note)
Gate Threshold Voltage VGS(TH) V
GS = VDS, ID=250μA 1 2.1 2.5 V
VGS = 10V, ID=500mA 0.6 3.75
Drain-Source On-Voltage VDS (ON) VGS = 5.0V, ID=50mA 0.09 1.5 V
On-State Drain Current ID(ON) V
GS=10V,VDS≥2VDS(ON) 500 2700 mA
VGS =10V, ID=500mA 1.2 3.5 Ω
Static Drain-Source On-Resistance RDS (ON) VGS =5.0V, ID=50mA 1.7 7.5 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS V
DS=25V,VGS=0V,f=1.0MHz 20 50 pF
Output Capacitance COSS 11 25 pF
Reverse Transfer Capacitance CRSS 4 5 pF
Turn-On Time tON
VDD=30V, RL=150Ω
ID=200mA, VGS =10V
RGEN =25Ω
20 nS
Turn-Off Time tOFF
VDD=30V, RL=25Ω
ID=200mA, VGS=10V
RGEN =25Ω
20 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD V
GS=0V, Is=115mA (Note ) 0.88 1.5 V
Maximum Pulsed Drain-Source Diode
Forward Current ISM 0.8 A
Maximum Continuous Drain-Source
Diode Forward Current Is 115 mA
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
2N7002 Power MOSFET
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TEST CIRCUIT AND WAVEFORM
Figure 1
VGS
RGEN
VDD
VIN
RL
VOUT
DUT
G
D
S
Pulse Width
Input , Vin
Output , Vout
ton toff
td(off)
tr
td(on) tf
Inverted
10%
10%10%
50%50%
90%
90%
90%
Figure 2. Switching Waveforms
2N7002 Power MOSFET
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TYPICAL CHARACTERISTICS
054
32
1
1.5
1
0.5
0
2
3.0V
2
1. 6
1.2
0.80.4
VGS=4.0V
3
2.5
2
1.5
1
0
0.5
Drain-Source Current, ID(A)
Drain-Source Voltage, VDS(V)
VGS=10V
4.0V
5.0V
6.0V
7.0V
8.0V
9.0V
On-Resistance Characteristics
Normalized Drain-Source
ON-Resistance, RDS (ON)
Drain Current, ID(A)
On-Resistance Varisation with Gate
Voltage and Drain Current
4.5V
5.0V
6.0V
7.0V
8.0V
9.0V
10V
10075
0
-25
2
1.5
1
-50
0.5
1.61.2
0.8
0.4
VGS=10V
3
2.5
2
1.5
1
0
0.5
25 50 150
125
0.75
1.25
1.75
2
0
TJ=125℃
25℃
Normalized Drain-Source
ON- Resistance, RDS(ON)
Junction Temperature, TJ(°C)
On-Resistance Varisation with Temperature
VGS=10V
ID=500mA
Normalized Drain-Source ON-
Resistance, RDS (ON)
Drain Current,ID(A)
On-Resistance Varisation with Drain
Current and Temperature
010
8
6
42 100750-25
-50 25 50 125
1.6
1. 2
1.8
0. 4
2
0
150
1.1
1.05
1
0.95
0.9
0.85
0.8
Drain Current, ID(A)
Gate to Source Voltage, VGS (V)
Transfer Characteristics
VDS=10V 25℃
125℃
Normalized Gate-Source Threshold
Voltage, VGS(TH)
Junction Temperature, TJ (°C)
Gate Threshold Varisation with Temperature
VGS = VDS
ID = 1mA
2N7002 Power MOSFET
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TYPICAL CHARACTERICS (Cont.)
10075
0
-25
1.1
1.05
1
-50
0.925
11.2
0.8
0.4
1
0.5
0.1
0.05
0.01
0.2
0.005
25 50 150
125
0.95
1.025
1.075
1.4
0.001
0.975
0.6
2
Normalized Drain-Source Breakdown
Voltage, BVDSS
Junction Temperature, TJ(°C)
Breakdown Voltage Varisation
with Temperature
ID = 250μA
Body Diode Forward Voltage, VSD (V)
Body Diode Forward Voltage Varisation
with Temperature
Reverse Drain Current, IS(A)
VGS=0V
TJ =125℃
25℃
Capacitance (pF)
Gate-Source Voltage, VGS (V)
Drain Current, ID(A)
Normalized Effective Transient Thermal
Resistance, r (t)
2N7002 Power MOSFET
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
