UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Package 2N7002G-AE2-R 2N7002G-AL3-R 2N7002G-AL6-R SOT-23-3 SOT-323 SOT-363 1 S S S1 Pin Assignment 2 3 4 5 G D G D G1 D2 S2 G2 6 D1 Packing Tape Reel Tape Reel Tape Reel MARKING SOT-23-3/SOT-323 SOT-363 www.unisonic.com.tw Copyright (c) 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R206-037,H 2N7002 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted.) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS 1M) Continuous Gate Source Voltage Non Repetitive(tp<50s) Continuous Drain Current Pulsed Power Dissipation Derated Above 25C Junction Temperature Storage Temperature SYMBOL VDSS VDGR VGSS ID PD TJ TSTG RATINGS 60 60 20 40 300 800 200 1.6 + 150 -55 ~ +150 UNIT V V V mA mW mW/C C C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL JA Junction to Ambient RATINGS 625 UNIT C/W ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSSF IGSSR VGS=0V, ID=10A VDS=60V, VGS =0V VGS =20V, VDS=0V VGS =-20V, VDS=0V 60 ON CHARACTERISTICS (Note) Gate Threshold Voltage VGS(TH) 1 Drain-Source On-Voltage VDS (ON) VGS = VDS, ID=250A VGS = 10V, ID=500mA VGS = 5.0V, ID=50mA VGS=10V,VDS2VDS(ON) VGS =10V, ID=500mA VGS =5.0V, ID=50mA Gate-Source Leakage Current On-State Drain Current Static Drain-Source On-Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance ID(ON) RDS (ON) CISS COSS CRSS VDS=25V,VGS=0V,f=1.0MHz VDD=30V, RL=150 ID=200mA, VGS =10V RGEN =25 VDD=30V, RL=25 ID=200mA, VGS=10V Turn-Off Time tOFF RGEN =25 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, Is=115mA (Note ) Maximum Pulsed Drain-Source Diode ISM Forward Current Maximum Continuous Drain-Source Is Diode Forward Current Note: Pulse Test: Pulse Width300s, Duty Cycle2.0% Turn-On Time MAX UNIT 1 100 -100 500 V A nA nA 2.1 0.6 0.09 2700 1.2 1.7 2.5 3.75 1.5 3.5 7.5 mA 20 11 4 50 25 5 pF pF pF 20 nS 20 nS 1.5 V 0.8 A 115 mA tON UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP 0.88 V V 2 of 6 QW-R206-037,H 2N7002 Power MOSFET TEST CIRCUIT AND WAVEFORM VDD RL VIN VOUT D VGS R GEN DUT G S Figure 1 t on t off tr t d (on) t d (off) 90% Output , Vout tf 90% 10% 10% Inverted 90% Input , Vin 50% 50% 10% Pulse Width Figure 2. Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R206-037,H 2N7002 Power MOSFET TYPICAL CHARACTERISTICS On-Resistance Varisation with Gate Voltage and Drain Current On-Resistance Characteristics 9.0V Drain-Source Current, ID (A) VGS=10V 3 8.0V 7.0V VGS=4.0V 4.5V 1.5 6.0V 1 5.0V 0.5 2.5 Normalized Drain-Source ON-Resistance, RDS (ON) 2 4.0V 2 3 4 1 Drain-Source Voltage, VDS(V) 0 6.0V 2 7.0V 8.0V 1.5 9.0V 10V 1 3.0V 0 5.0V 0.5 0 5 2 1.6 On-Resistance Varisation with Drain Current and Temperature 3 2 1.75 Normalized Drain-Source ONResistance, RDS (ON) VGS=10V ID=500mA 1.5 1.25 1 0.75 VGS =10V 2.5 TJ =125 2 1.5 25 1 0.5 0 0.5 -50 - 25 0 25 50 75 100 125 150 0.4 0 25 1.1 125 1.6 1.8 1.2 0.4 0 Normalized Gate-Source Threshold Voltage, VGS(TH) VDS=10V 1.6 2 Gate Threshold Varisation with Temperature Transfer Characteristics 2 1.2 0.8 Drain Current,ID (A) Junction Temperature, TJ (C) Drain Current, ID (A) 1.2 0.8 Drain Current, ID (A) On-Resistance Varisation with Temperature Normalized Drain-Source ON- Resistance, RDS(ON) 0.4 VGS = VDS ID = 1mA 1.05 1 0.95 0.9 0.85 0.8 0 2 4 6 8 10 Gate to Source Voltage, VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw -50 -25 0 25 50 75 100 125 150 Junction Temperature, TJ (C) 4 of 6 QW-R206-037,H 2N7002 Power MOSFET TYPICAL CHARACTERICS (Cont.) Body Diode Forward Voltage Varisation with Temperature Breakdown Voltage Varisation with Temperature 2 ID = 250A VGS=0V 1 1.075 Reverse Drain Current, IS (A) Normalized Drain-Source Breakdown Voltage, BVDSS 1.1 1.05 1.025 1 0.975 0.95 0.5 TJ =125 25 0.1 0.05 0.01 0.005 0.001 0.925 -50 -25 0 25 50 75 0.2 100 125 150 0.4 0.6 0.8 1 1.2 1.4 Body Diode Forward Voltage, VSD (V) Drain Current, ID (A) Normalized Effective Transient Thermal Resistance, r (t) Capacitance (pF) Gate-Source Voltage, VGS (V) Junction Temperature, TJ (C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R206-037,H 2N7002 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R206-037,H