MMBT2222A
SMALL SIGNAL NPN TRAN SISTOR
PRELIMINARY DATA
■SILICO N EP ITA X IAL PLANA R NP N
TRANSISTOR
■MINIA TURE S OT- 23 PLAS TIC PA CKA GE
FOR SURFACE MOUNTING CIRCUITS
■TAP E & RE EL PA C K ING
■THE PNP COMPLEMENTARY TYPE IS
MMBT2907A
APPLICATIONS
■WELL SU ITAB LE FOR PO RTAB L E
EQUIPMENT
■SMALL LO AD SWITCH TRA NS IS TOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATI C DIAG RAM
February 2003
SOT-23
Type Marking
MMBT2222A M22
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
VCBO Collector-Emitter Voltage (IE = 0) 75 V
VCEO Collector-Emitter Voltage (IB = 0) 40 V
VEBO Emitter-Base Voltage (I C = 0) 6 V
ICCollector Current 0.6 A
ICM Collector Peak Current (tp < 5 ms) 0.8 A
Ptot Total Dissipation at Tamb = 25 oC 350 mW
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
®
1/5
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient Max 357.1 oC/W
• Device mounted on a PCB area of 1 cm2 .
ELE CT RICAL CHAR ACT ERIST ICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current (VBE = -3 V) VCE = 60 V 10 nA
IBEX Base C ut-off Current
(VBE = -3 V) VCE = 60 V 20 nA
ICBO Collector Cut-off
Current (IE = 0) VCB = 75 V
VCB = 75 V Tj = 150 oC10
10 nA
µA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 3 V 15 nA
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA 40 V
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10 µA75 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10 µA6V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA 0.3
1V
V
VBE(sat)∗Collector-Base
Saturation Voltage IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA 0.6 1.2
2V
V
hFE∗DC Current Gain IC = 0.1 mA VCE = 10 V
IC = 1 mA VCE = 10 V
IC = 10 mA VCE = 10 V
IC = 150 mA VCE = 10 V
IC = 150 mA VCE = 1 V
IC = 500 mA VCE = 10 V
35
50
75
100
50
40
300
fTTransition Frequency IC = 20 mA VCE = 20V f = 100MHz 270 MHz
CCBO Collector-Base
Capacitance IE = 0 VCB = 10 V f = 1 MHz 4 8 pF
CEBO Emitter-Base
Capacitance IC = 0 VEB = 0.5 V f = 1MHz 20 25 pF
NF Noise Figure IC = 0.1 mA VCE = 10 V f = 1 KHz
∆f = 200 Hz RG = 1 KΩ4dB
h
ie∗Input Impedance VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz 2
0.25 8
1.25 KΩ
KΩ
hre∗Reverse Voltage Ratio VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz 8
410-4
10-4
hfe∗Small Signal Current
Gain VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz 50
75 300
375
hoe∗Output Admittance VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz 5
25 35
200 µS
µS
∗ P ulsed: P ulse duration = 300 µs, d uty cy cle ≤ 2 %
MMBT2222A
2/5
ELE CT RICAL CHAR ACT ERIST ICS (Continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tdDelay Time IC = 150 mA IB = 15 mA
VCC = 30 V 510ns
t
rRise Time 12 25 ns
tsStorage Time IC = 150 mA IB1 = - IB2 = 15 mA
VCC = 30 V 185 225 ns
tfFall Time 24 60 ns
∗ P ulsed: P ulse duration = 300 µs, d uty cy cle ≤ 2 %
MMBT2222A
3/5
DIM. mm mils
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G2.1 2.582.6 98.4
H 0.38 0.48 14.9 18.8
L0.3 0.611.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
0044616/B
SOT-23 MECHANICAL DATA
MMBT2222A
4/5
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third part ies which may re su lt from i ts u se. N o l i cen se i s
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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics pr oducts
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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MMBT2222A
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