2N7002K
Document number: DS30896 Rev. 10 - 2 1 of 6
www.diodes.com March 2012
© Diodes Incorporated
2N7002K
NEW PRODUCT
N-CHANNEL ENHAN CEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max ID max
TA = 25°C
60V 2 @ VGS = 10V 380mA
3 @ VGS = 5V 310mA
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant "Green"
Device (Notes 1 and 2)
ESD Protected Up To 2kV
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Motor control
Power Management Functions
Backlighting
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Part Number Qualification Case Packaging
2N7002K-7 Commercial SOT23 3000/Tape & Reel
2N7002KQ-7 Automotive SOT23 3000/Tape & Reel
2N7002K-13 Commercial SOT23 10000/Tape & Reel
2N7002KQ-13 Automotive SOT23 10000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
ESD protected up to 2kV Top View
D
GS
Equivalent Circuit
Source
Gate
Protection
Diode
Gate
Drain
K = SAT (Shanghai Assembly/ Test site)
C = CAT (Chengdu Assembly/ Test site)
7K= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Chengdu A/T Site Shanghai A/T Site
C7K
YM
K7K
YM
2N7002K
Document number: DS30896 Rev. 10 - 2 2 of 6
www.diodes.com March 2012
© Diodes Incorporated
2N7002K
NEW PRODUCT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State TA = 25°C
TA = 70°C ID 380
300 mA
t<5s TA = 25°C
TA = 70°C ID 430
340 mA
Continuous Drain Current (Note 5) VGS = 5V
Steady
State TA = 25°C
TA = 70°C ID 310
240 mA
t<5s TA = 25°C
TA = 70°C ID 350
270 mA
Maximum Continuous Body Diode Forward Current (Note 5) IS 0.5 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) (Note 5) IDM 1.2 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) PD 370 mW
Thermal Resistance, Junction to Ambient (Note 4) Steady State RθJA 357 °C/W
t<5s 292
Total Power Dissipation (Note 5) PD 540 mW
Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 240 °C/W
t<5s 197
Thermal Resistance, Junction to Case (Note 5) R
θ
JC 91
Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current IDSS 1.0 μA VDS = 60V, VGS = 0V
Gate-Source Leakage IGSS ±10 μA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
1.0 1.6 2.5 V
VDS = 10V, ID = 1mA
Static Drain-Source On-Resistance RDS (ON)
2.0
3.0 Ω VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
Forward Transfer Admittance |Yfs| 80 ms VDS =10V, ID = 0.2A
Diode Forward Voltage VSD 0.75
1.1
V VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss 30 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss 4.2 25 pF
Reverse Transfer Capacitance Crss 2.9 5.0 pF
Gate Resistance R
g
133 m f = 1MHz , VGS = 0V, VDS = 0V
Total Gate Charge Q
g
0.3 nC VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge Q
g
s 0.2 nC
Gate-Drain Charge Q
g
d 0.08 nC
Turn-On Delay Time tD
(
on
)
3.9 ns VDD = 30V, VGS = 10V,
RG = 25, ID = 200mA
Turn-On Rise Time t
r
3.4 ns
Turn-Off Delay Time tD
(
off
)
15.7 ns
Turn-Off Fall Time tf 9.9 ns
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
2N7002K
Document number: DS30896 Rev. 10 - 2 3 of 6
www.diodes.com March 2012
© Diodes Incorporated
2N7002K
NEW PRODUCT
0
0.2
0.4
0.6
0.8
1.0
012345
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
I, D
AIN
EN
(A)
D
V , GATE-SOURCE VOL TAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ch
0
0.5
1
1.5
2
-50 -250255075 100 125 150
0.1
I , DRAIN CURRENT (A)
Fig . 4 Stat i c Drai n- Sour ce On-Resi st ance vs. D r ai n Current
D
1
10
1
I , DRAIN CURRENT (A)
Fig. 5 St atic Drain-Source On-Resistance vs. Drain Current
D
10
0
V GATE SOURCE VOLT AGE (V)
GS
,
Fig. 6 St atic Drain-Source On-Resistance vs. Gate-Source Voltage
2N7002K
Document number: DS30896 Rev. 10 - 2 4 of 6
www.diodes.com March 2012
© Diodes Incorporated
2N7002K
NEW PRODUCT
0
T , CHANNEL TEMPERATURE ( C)
Fig. 7
CH
°
Static Drain- Source On-St at e R esis t ance
vs. C hann el Temperat ure
I , REVERSE DRAIN CURRENT (A)
DR
1
I , REVERSE DRAIN CURRENT (A)
DR
1
I , DRAIN CURRENT (A)
D
Fig .10 For ward Trans fe r Admitt anc e vs. Dr ai n Current
|
Y
|, F
O
R
WA
R
D T
R
ANSFE
R
ADMITTAN
C
E (S)
fs
0.001
0.01
0.1
1
0.1 1 10 100
Fi g. 11 Saf e Oper ation Ar ea
V , DRAIN-SOURCE VOLT AGE (V)
DS
I, D
AI
E
(A)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
Single Pulse
J(max)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
0
1
2
3
4
5
6
7
8
9
10
t1, PULSE DURATION TIME (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,0000.0001
Single Pulse
R = 240 C/W
R = r * R
T - T = P * R
θ
θθ
θ
JA
JA(t) (t) JA
JA JA(t)
°
P , PEAK TRANSIENT POIWER (W)
(PK)
2N7002K
Document number: DS30896 Rev. 10 - 2 5 of 6
www.diodes.com March 2012
© Diodes Incorporated
2N7002K
NEW PRODUCT
0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
0.00001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
R = r * R
θ
JA(t) (t)
θ
θ
JA
JA
R = 240 C/W
Duty Cycle, D = t1/t2
°
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
2N7002K
Document number: DS30896 Rev. 10 - 2 6 of 6
www.diodes.com March 2012
© Diodes Incorporated
2N7002K
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com