2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = 25C 2 @ VGS = 10V 380mA 3 @ VGS = 5V 310mA * * * * * 60V * * Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 1 and 2) ESD Protected Up To 2kV Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * * * * * Motor control Power Management Functions Backlighting * Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) Drain SOT23 D Gate Gate Protection Diode ESD protected up to 2kV Top View S G Source Equivalent Circuit Top View Ordering Information (Note 3) Part Number 2N7002K-7 2N7002KQ-7 2N7002K-13 2N7002KQ-13 Notes: Qualification Commercial Automotive Commercial Automotive Case SOT23 SOT23 SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 10000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. C7K K7K Chengdu A/T Site Date Code Key Year 2006 Code T Month Code Jan 1 YM Marking Information YM NEW PRODUCT V(BR)DSS Features and Benefits K = SAT (Shanghai Assembly/ Test site) C = CAT (Chengdu Assembly/ Test site) 7K= Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Shanghai A/T Site 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D 2N7002K Document number: DS30896 Rev. 10 - 2 1 of 6 www.diodes.com March 2012 (c) Diodes Incorporated 2N7002K Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State t<5s Continuous Drain Current (Note 5) VGS = 5V Steady State t<5s TA = 25C TA = 70C TA = 25C TA = 70C TA = 25C TA = 70C TA = 25C TA = 70C ID Value 60 20 380 300 ID 430 340 mA ID 310 240 mA mA 350 270 0.5 1.2 ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10s pulse, duty cycle = 1%) (Note 5) Units V V IS IDM mA A A Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Symbol PD Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Steady State t<5s RJA Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Value 370 357 292 540 240 197 91 -55 to 150 PD Steady State t<5s RJA Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RJC TJ, TSTG Units mW C/W mW C/W C Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 1.0 10 V A A VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) 1.0 1.6 2.5 V 2.0 3.0 1.1 ms V VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA 50 25 5.0 pF pF pF m nC nC nC ns ns ns ns RDS (ON) |Yfs| VSD 80 0.75 Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf 30 4.2 2.9 133 0.3 0.2 0.08 3.9 3.4 15.7 9.9 Test Condition VDS = 25V, VGS = 0V f = 1.0MHz f = 1MHz , VGS = 0V, VDS = 0V VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 30V, VGS = 10V, RG = 25, ID = 200mA 4. Device mounted on FR-4 PCB, with minimum recommended pad layout 5. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2N7002K Document number: DS30896 Rev. 10 - 2 2 of 6 www.diodes.com March 2012 (c) Diodes Incorporated ID, DRAIN CURRENT (A) NEW PRODUCT 2N7002K 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 2 1.5 1 1 0.5 0.1 0 -50 75 100 125 150 -25 0 25 50 Tch , CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 0 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 2N7002K Document number: DS30896 Rev. 10 - 2 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 3 of 6 www.diodes.com March 2012 (c) Diodes Incorporated NEW PRODUCT IDR, REVERSE DRAIN CURRENT (A) 2N7002K 0 IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TCH, CHANNEL TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 1 1 10 P(PK), PEAK TRANSIENT POIWER (W) ID, DRAIN CURRENT (A) RDS(on) Limited DC 0.1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.01 PW = 100s PW = 10s T J(max) = 150C T A = 25C Single Pulse 0.001 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Safe Operation Area 2N7002K Document number: DS30896 Rev. 10 - 2 9 8 7 Single Pulse RJA = 240C/W RJA(t) = r(t) * RJA TJ - TA = P * RJA(t) 6 5 4 3 2 1 100 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 12 Single Pulse Maximum Power Dissipation 4 of 6 www.diodes.com March 2012 (c) Diodes Incorporated 2N7002K NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 240C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X 2N7002K Document number: DS30896 Rev. 10 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com March 2012 (c) Diodes Incorporated 2N7002K NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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