Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10 Publication Order Number:
BD676/D
BD676, BD676A, BD678,
BD678A, BD680, BD680A,
BD682
Plastic Medium-Power
Silicon PNP Darlingtons
...for use as output devices in complementary general–purpose
amplifier applications.
High DC Current Gain –
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with
BD675, 675A, 677, 677A, 679, 679A, 681
BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
VCEO 45
60
80
100
Vdc
Collector-Base Voltage
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
VCB 45
60
80
100
Vdc
Emitter-Base Voltage VEB 5.0 Vdc
Collector Current IC4.0 Adc
Base Current IB0.1 Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD40
0.32 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance –
Junction to Case RθJC 3.13 °C/W
TO–225AA
CASE 77
STYLE 1
MARKING DIAGRAM
Y = Year
WW = Work Week
BD6xxx = Specific Device Code
xxx = 76, 76A, 78, 78A, 80, 80A or 82
Device Package Shipping
ORDERING INFORMATION
BD676 TO–225AA 500 Units/Box
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLTS
40 WATTS
BD676A TO–225AA 500 Units/Box
BD678 TO–225AA 500 Units/Box
BD678A TO–225AA 500 Units/Box
BD680 TO–225AA 500 Units/Box
BD680A TO–225AA 500 Units/Box
BD682 TO–225AA 500 Units/Box
YWW
BD6xxx
321
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
http://onsemi.com
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Breakdown Voltage (Note 1) BD676, 676A
(IC = 50 mAdc, IB = 0) BD678, 678A
BD680, 680A
BD682
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
BVCEO
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
45
60
80
100
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ICEO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
500
ÎÎÎ
ÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO. IE = 0, TC = 100°C)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICBO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
0.2
2.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc) BD676, 678, 680, 682
(IC = 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
750
750
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc) BD678, 680, 682
(IC = 2.0 Adc, IB = 40 mAdc) BD676A, 678A, 680A
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
VCE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
2.5
2.8
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc) BD678, 680, 682
(IC = 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VBE(on)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
2.5
2.5
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎ
ÎÎÎÎ
hfe
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
50
40
10
5.0
015 30 45 60 75 105 135 150 165
Figure 1. Power Temperature Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
12090
45
20
15
30
25
35
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682
http://onsemi.com
3
Figure 2. DC Safe Operating Area
5.0
1.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
1.0
0.5
0.05 2.0 5.0 10 50 100
BONDING WIRE LIMIT
THERMAL LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
IC, COLLECTOR CURRENT (AMP)
TC = 25°C
BD676, 676A
BD678, 678A
BD680, 680A
BD682
20
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
Figure 3. Darlington Circuit Schematic
BASE
PNP
BD676, 676A
BD678, 678A
BD680, 680A
BD682
COLLECTOR
EMITTER
8.0 k 120
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682
http://onsemi.com
4
PACKAGE DIMENSIONS
TO–126
TO–225AA
CASE 77–09
ISSUE W
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
–B–
–A– M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 --- 1.02 ---

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