2N7000KL/BS170KL
Vishay Siliconix New Product
www.vishay.com
2
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA60
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA1 2.0 2.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "10 V "1mA
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 55_C10 mA
VGS = 10 V, VDS = 7.5 V 0.8
On-State Drain Current
ID(on) VGS = 4.5 V, VDS = 10 V 0.5 A
Drain Source On Resistanceb
VGS = 10 V, ID = 0.5 A 1.1 2
Drain-Source On-Resistance
rDS(on) VGS = 4.5 V, ID = 0.2 A 1.6 4 W
Forward Transconductancebgfs VDS = 10 V, ID = 0.5 A 550 mS
Diode Forward Voltage VSD IS = 0.3 A, VGS = 0 V 0.87 1.3 V
Dynamicb
Total Gate Charge Qg0.4 0.6
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V
ID ^ 0.25 A 0.11 nC
Gate-Drain Charge Qgd
.
0.15
Gate Resistance Rg173 W
td(on) 3.8 10
Turn-On Time trVDD = 30 V, RL = 150 W
4.8 15
-
td(off)
D
^
0.2
,
GEN
=
10
Rg = 10 W12.8 20
ns
urn-
me
tf
9.6 15
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.2
0.4
0.6
0.8
1.0
012345 0123456
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS = 10, 7 V
3 V
5 V
4 V
VGS − Gate-to-Source Voltage (V)
− Drain Current (A)ID
TJ = −55_C
125_C
25_C
6 V
1.2
0.9
0.6
0.3
0