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Page <1> V1.026/02/13
Schottky Barrier Diode
Features:
• Low Turn-On Voltage
• Fast Switching
• Ultra-Small Surface Mount Package
• PN Junction Guard Ring for Transient and ESD Protection
Applications:
Schottky barrier detector and switching diode
Max. Rating @ Ta = 25°C unless otherwise specied
Parameter Symbol Limits Unit
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC reverse Voltage
Vrrm
Vrms
Vr
30 V
RMS reverse voltage Vr(rms)21 V
Average rectied output current Io100 mA
Forward continuous current If200 mA
Repetitive peak forward current Ifrm 300 mA
Forward surge current @t<1.0s Ifsm 600 mA
Power dissipation Pd200 mW
Thermal resistance, junction to ambient air Rθja 500 °C/W
Junction temperature Tj125 °C
Storage temperature range Tstg -65 to +150 °C
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Conditions Min. Max. Unit
Reverse breakdown voltage V(br)rIr = 100μA 30 - V
Forward voltage
Vf1If = 0.1mA - 240 mV
Vf2If = 1mA - 320 mV
Vf3If = 10mA - 400 mV
Vf4If = 30mA - 500 mV
Vf5If = 100mA - 1,000 mV
Reverse leakage current IrVr = 25V - 2 μA
Reverse recovery time trr If = 10mA, Ir = 10mA
to 1mA Rl = 100Ω - 5 ns
Junction capacitance CjVr = 1V, f = 1MHz - 10 pF