DATA SH EET
Product data sheet
Supersedes data of 2002 Oct 04 2004 Feb 03
DISCRETE SEMICONDUCTORS
MMBT3904
NPN switching transistor
db
ook, halfpage
M3D088
2004 Feb 03 2
NXP Semiconductors Product data sheet
NPN switching transistor MMBT3904
FEATURES
•Collector current capability IC = 200 mA
•Collector-emitter voltage VCEO = 40 V.
APPLICATIONS
•General switching and amp lification .
DESCRIPTION
NPN switching tran sistor in a SOT23 plastic package.
PNP complement: MMBT3906.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
TYPE NUMBER MARKING CODE(1)
MMBT3904 7A∗
PINNING
PIN DESCRIPTION
1base
2emitter
3collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23 ) and symbo l .
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage 40 V
ICcollector current (DC) 200 mA
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
MMBT3904 −plastic surface mounted package; 3 leads SOT23
2004 Feb 03 3
NXP Semiconductors Pr oduct data sheet
NPN switching transistor MMBT3904
LIMITING VALUES
In accordance with the A bsolute Maximum Rating Syst em (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −60 V
VCEO collector-emitter voltage open base −40 V
VEBO emitter-bas e voltage open collector −6 V
ICcollector current (DC) −200 mA
ICM peak collector current −200 mA
IBM peak base current −100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
2004 Feb 03 4
NXP Semiconductors Pr oduct data sheet
NPN switching transistor MMBT3904
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 30 V −50 nA
IEBO emitter cu t-off current IC = 0; VEB = 6 V −50 nA
hFE DC current gain VCE = 1 V; see Fig.2; note 1
IC = 0.1 mA 60 −
IC = 1 mA 80 −
IC = 10 mA 100 300
IC = 50 mA 60 −
IC = 100 mA 30 −
VCEsat collector-emitter saturation
voltage IC = 10 mA; IB = 1 mA −200 mV
IC = 50 mA; IB = 5 mA −300 mV
VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 850 mV
IC = 50 mA; IB = 5 mA −950 mV
Cccollector capacitan ce IE = Ie = 0; VCB = 5 V; f = 1 MHz −4pF
Ceemitter capacitance IC = Ic = 0; VBE = 500 mV;
f = 1 MHz −8pF
fTtransition frequency IC = 10 mA; VCE = 20 V;
f = 100 MHz 300 −MHz
Fnoise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz −5dB
Switching times (between 10% and 90% levels); see Fig.3
tddelay time ICon = 10 mA; IBon = 1 mA;
IBoff = −1 mA −35 ns
trrise time −35 ns
tsstorage time −200 ns
tffall time −50 ns
2004 Feb 03 5
NXP Semiconductors Pr oduct data sheet
NPN switching transistor MMBT3904
handbook, halfpage
MGU821
hFE
100
0
200
400
300
500
IC (mA)
10−111010
2103
(1)
(2)
(3)
Fig.2 DC current gain; typical values.
VCE = 1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C. Fig.3 Collector current as a function of
collector-emitter voltag e.
(1) IB = 5 mA.
(2) IB = 4.5 mA.
(3) IB = 4 mA.
(4) IB = 3.5 mA.
(5) IB = 3 mA.
(6) IB = 2.5 mA.
(7) IB = 2 mA.
(8) IB = 1.5 mA.
(9) IB = 1 mA.
(10) IB = 0.5 mA.
handbook, halfpage
IC
(mA)
062810
VCE (V)
4
0
250
150
200
50
100
MGU822
(1) (2) (3) (4) (5) (6) (7)
(8)
(9)
(10)
Tamb = 25 °C.
handbook, halfpage
MGU823
VBE
(mV)
400
200
600
1000
800
1200
IC (mA)
10−111010
2103
(1)
(2)
(3)
Fig.4 Base-emitter voltage as a fu nc tion of
collector current.
VCE = 1 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
MGU824
VBEsat
(mV)
600
1000
400
200
800
1200
IC (mA)
10−111010
2103
(1)
(2)
(3)
Fig.5 Base-emitter saturation voltage as a
function of collector current.
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
2004 Feb 03 6
NXP Semiconductors Pr oduct data sheet
NPN switching transistor MMBT3904
handbook, halfpage
MGU825
103
VCEsat
(mV)
102
10
IC (mA)
10−1110102103
(1)
(2)
(3)
Fig.6 Collector-emitter saturation voltage as a
function of collector current.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Fig.7 Test circuit for switching times.
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = −1.9 V; VCC = 3 V.
Oscilloscope: input impedance Zi = 50 Ω.
2004 Feb 03 7
NXP Semiconductors Pr oduct data sheet
NPN switching transistor MMBT3904
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Feb 03 8
NXP Semiconductors Pr oduct data sheet
NPN switching transistor MMBT3904
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or co mpleting a design.
2. The product s ta tus of device(s) de scribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
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reserves the right to make changes to information
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificati on .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
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not complete, exhaus tive or legally binding.
NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the tech nical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/04/pp9 Date of releas e : 2004 Feb 03 Document order number: 9397 750 12624
