PD - 94892C IRLML2502PbF HEXFET(R) Power MOSFET l l l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free Halogen-Free * VDSS = 20V ' RDS(on) = 0.045 6 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Micro3TM Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units 20 4.2 3.4 33 1.25 0.8 0.01 12 -55 to + 150 V A W W/C V C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Typ. Max. Units 75 100 C/W 1 05/13/10 IRLML2502PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.60 5.8 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.01 0.035 0.050 --- --- --- --- --- --- 8.0 1.8 1.7 7.5 10 54 26 740 90 66 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.045 VGS = 4.5V, ID = 4.2A 0.080 VGS = 2.5V, ID = 3.6A 1.2 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 4.0A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 12 ID = 4.0A 2.7 nC VDS = 10V 2.6 VGS = 5.0V --- VDD = 10V --- ID = 1.0A ns --- RG = 6 --- RD = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units 1.3 33 --- --- --- --- 16 8.6 1.2 24 13 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.3A, VGS = 0V TJ = 25C, IF = 1.3A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Surface mounted on FR-4 board, t 5sec. Pulse width 300s; duty cycle 2%. 2 www.irf.com IRLML2502PbF 100 100 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 2.25V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 2.25V 10 1 0.1 100 VDS , Drain-to-Source Voltage (V) 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C V DS = 15V 20s PULSE WIDTH 2.4 2.8 3.2 3.6 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 VGS , Gate-to-Source Voltage (V) 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 2.0 20s PULSE WIDTH TJ = 150 C 4.0 ID = 4.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLML2502PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1000 800 Ciss 600 400 200 0 Coss Crss 1 10 10 VGS , Gate-to-Source Voltage (V) 1200 VDS = 10V 8 6 4 2 0 100 ID = 4.0A 0 4 8 12 16 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 I D , Drain Current (A) 100 TJ = 150 C 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.4 10us 10 100us 1ms 1 10ms TA = 25 C TJ = 150 C Single Pulse 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLML2502PbF ID , Drain Current (A) 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 TC , Case Temperature ( C) 150 Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 RDS(on) , Drain-to -Source Voltage ( ) 0.05 0.04 Id = 4.0A 0.03 0.02 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGS, Gate -to -Source Voltage ( V ) Fig 11. On-Resistance Vs. Gate Voltage 6 7.0 RDS ( on ) , Drain-to-Source On Resistance ( ) IRLML2502PbF 0.30 VGS = 2.5V 0.20 0.10 VGS = 4.5V 0.00 0 10 20 30 40 iD , Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current www.irf.com IRLML2502PbF Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) DIMENSIONS A 6 5 SYMBOL D A A1 A2 b c D E E1 e e1 L L1 L2 A A2 3 6 C E E1 1 2 0.15 [0.006] M C B A 0.10 [0.004] C A1 5 B 3X b e 0.20 [0.008] M C B A NOTES: e1 H 4 L1 Recommended Footprint c L2 0.972 0.950 0.802 3X L 7 1.900 MILLIMETERS INCHES MIN MAX MIN 0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0 1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8 MAX 0.0004 %6& %6& REF BSC 0 8 2.742 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. Micro3 (SOT-23/TO-236AB) Part Marking Information 1RWHV7KLVSDUWPDUNLQJLQIRUPDWLRQDSSOLHVWRGHYLFHVSURGXFHGDIWHU '$7(&2'( 3$57180%(5 : ,)35(&('('%</$67',*,72)&$/(1'$5<($5 /($')5(( &X:,5( /27&2'( +$/2*(1)5(( ; 3$57180%(5&2'(5()(5(1&( $ ,5/0/ % ,5/0/ & ,5/0/ ' ,5/0/ ( ,5/0/ ) ,5/0/ * ,5/0/ + ,5/0/ , ,5/0/ - ,5/0/ . ,5/0/ / ,5/0/ 0 ,5/0/ 1 ,5/0/ 3 ,5/0/ 5 ,5/0/ <($5 < :25. :((. : $ % & ' ; < = : ,)35(&('('%<$/(77(5 <($5 < $ % & ' ( ) * + . :25. :((. : $ % & ' ; Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRLML2502PbF Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/2010 8 www.irf.com