DATA SH EET
Product data sheet
Supersedes data of 1999 May 21 2004 Oct 11
DISCRETE SEMICONDUCTORS
PN2222A
NPN switching transistor
db
ook, halfpage
M3D186
2004 Oct 11 2
NXP Semiconductors Product data sheet
NPN switching transistor PN2222A
FEATURES
High current (max. 600 mA)
Low voltage (max. 40 V).
APPLICATIONS
General purpose s witc hing and linear amplification.
DESCRIPTION
NPN switching trans ist or in a TO-92; SOT54 plastic
package. PNP complemen t: PN2907A.
PINNING
PIN DESCRIPTION
1collector
2base
3emitter
Fig.1 Simplified outline (TO-92; SOT54) and
symbol.
handbook, halfpage
1
3
2
MAM279
1
2
3
ORDERING INFORMATION
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PN2222A SC-43A plastic single-ended leaded (thro ugh hole) package; 3 leads SOT54
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter 75 V
VCEO collector-emitter voltage open base 40 V
VEBO emitter-base voltage open collector 6 V
ICcollector current (DC) 600 mA
ICM peak collector current 800 mA
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C500 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb ambient temperature 65 +150 °C
2004 Oct 11 3
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PN2222A
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 250 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector-base cut-of f cu rrent VCB = 60 V; I E = 0 A 10 nA
VCB = 60 V; I E = 0 A; Tj = 125 °C10 µA
IEBO emitter-base cu t-off current VEB = 3 V; IC = 0 A 10 nA
hFE DC current gain VCE = 10 V; I C = 0.1 mA 35
VCE = 10 V; I C = 1 mA 50
VCE = 10 V; I C = 10 mA 75
VCE = 10 V; I C = 10 mA; Tj = 55 °C35
VCE = 1 V; IC = 150 mA 50
VCE = 10 V; I C = 150 mA 100 300
VCE = 10 V; I C = 500 mA 40
VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA 300 mV
IC = 500 mA; IB = 50 mA 1V
VBEsat base-emitt er saturation voltage IC = 150 mA; IB = 15 mA 0.6 1.2 V
IC = 500 mA; IB = 50 mA 2 V
Cccollector capacitance VCB = 10 V; I E = ie = 0 A; f = 1 MHz 8pF
Ceemitter cap a citance VEB = 500 mV; IC = ic = 0 A; f = 1 MHz 25 pF
fTtransition freque ncy VCE = 20 V; I C = 20 mA; f = 100 MHz 300 MHz
Fnoise figure VCE = 5 V; IC = 100 µA; RS = 1 k;
f = 1 kHz 4dB
Switching times (between 1 0 % and 90 % le vels); see Fig.2
ton turn-on time ICon = 150 mA; IBon = 15 mA;
IBoff = 15 mA; Tamb = 25 °C35 ns
tddelay time 15 ns
trrise time 20 ns
toff turn-off time 250 ns
tsstorage time 200 ns
tffall time 60 ns
2004 Oct 11 4
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PN2222A
R
C
R2
R1
DUT
mlb826
V
o
R
B
(probe)
450
(probe)
450
o
scilloscope oscilloscop
e
V
BB
V
I
V
CC
Fig.2 Test circuit for switching times.
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf 3 ns.
R1 = 68 ; R2 = 325 ; RB = 325 ; RC = 160 .
VBB = 3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = 50 .
2004 Oct 11 5
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PN2222A
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 04-06-28
04-11-16
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT5
4
e1e
1
2
3
2004 Oct 11 6
NXP Semiconductors Pr oduct data shee t
NPN switching transistor PN2222A
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
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reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict betw een information
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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The information pr e sent ed in this document d oes not form part of an y q uot ation or co ntract, is believed to be a ccur ate a nd reliable and may be changed
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/04/pp7 Date of release: 2004 Oct 11 Document orde r number: 9397 750 13618