General Description
The MAX6495–MAX6499 is a family of small, low-current,
overvoltage-protection circuits for high-voltage transient
systems such as those found in automotive and industrial
applications. These devices monitor the input voltage and
control an external nMOSFET switch to isolate the load
at the output during an input overvoltage condition. The
devices operate over a wide supply voltage range from
+5.5V to +72V.
The gate of the nMOSFET is driven high while the
monitored input is below the user-adjustable overvoltage
threshold. An integrated charge-pump circuit provides a
10V gate-to-source voltage to fully enhance the nMOSFET.
When the input voltage exceeds the user-adjusted over-
voltage threshold, the gate of the MOSFET is quickly
pulled low, disconnecting the load from the input. In some
applications, disconnecting the output from the load is not
desirable. In these cases, the protection circuit can be
configured to act as a voltage limiter where the GATE output
saw-tooths to limit the voltage to the load (MAX6495/
MAX6496/MAX6499).
The MAX6496 supports lower input voltages and reduces
power loss by replacing the external reverse battery diode
with an external series pMOSFET. The MAX6496 generates
the proper bias voltage to ensure that the pMOSFET is
on during normal operations. The gate-to-source voltage is
clamped during load-dump conditions, and the pMOSFET is
off during reverse-battery conditions.
The MAX6497/MAX6498 feature an open-drain, undedicated
comparator that notifies the system if the output falls
below the programmed threshold. The MAX6497 keeps
the MOSFET switch latched off until either the input power
or the SHDN pin is cycled. The MAX6498 will autoretry
when VOVSET falls below 130mV.
These devices are available in small, thermally enhanced,
6-pin and 8-pin TDFN packages and are fully specified
from -40°C to +125°C.
Benets and Features
●Integration and Small Package Saves Board Space
While Ensuring Reliable System Operation
• 3mm x 3mm TDFN Package
• Supply Voltage Range: +5.5V to +72V
• Fast Gate Shutoff During Overvoltage with 100mA
Sink Capability
• Internal Charge-Pump Circuit Ensures 10V Gate-to-
Source Enhancement for Low RDS(ON) Performance
• Supports Series pMOSFET for Reverse-Battery
Voltage Protection (MAX6496)
• POK Indicator (MAX6497/MAX6498)
• Adjustable Overvoltage Threshold
• Adjustable Undervoltage Threshold (MAX6499)
●Integrated Protection Features and Wide
Temperature Range Improve Reliability
• Overvoltage-Protection Switch Controller Allows
User to Size External nMOSFETs
• nMOSFET Latches Off After an Overvoltage Condition
(MAX6497/MAX6499)
• Thermal-Shutdown Protection
• -40°C to +125°C Operating Temperature Range
• AEC-Q100 Qualied (MAX6495ATT/V+ and
MAX6499ATA/V+ Only)
Applications
●Automotive
●Industrial
●Telecom/Servers/Networking
●FireWire®
●Notebook Computers
19-3778; Rev 14; 7/17
FireWire is a registered trademark of Apple, Inc.
Selector Guide and Ordering Information appear at end of
data sheet.
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
EVALUATION KIT AVAILABLE
IN, GATE, GATEP .................................................-0.3V to +80V
SHDN, CLEAR ...........................................-0.3V to (VIN + 0.3V)
POK, OUTFB ......................................................... -0.3V to +80V
GATE to OUTFB ....................................................-0.3V to +12V
GATEP to IN ..........................................................-12V to +0.3V
OVSET, UVSET, POKSET ....................................-0.3V to +12V
Current Sink/Source (All Pins) ...........................................50mA
All Other Pins to GND ................................-0.3V to (VIN + 0.3V)
Continuous Power Dissipation (TA = +70°C)
6-Pin TDFN (derate 18.2mW/°C above +70°C) ........1455mW
8-Pin TDFN (derate 18.2mW/°C above +70°C) ........1455mW
Operating Temperature Range ......................... -40°C to +125°C
Junction Temperature ...................................................... +150°C
Storage Temperature Range ............................ -60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) ....................................... +260°C
(All pins referenced to GND.)
(VIN = 14V, CGATE = 6nF, TA = -40°C to +125°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage Range VIN 5.5 72.0 V
Input Supply Current IIN No load
SHDN = high 100 150
µA
SHDN = low (MAX6497/MAX6498/
MAX6499) 15 24
SHDN = low (MAX6495/MAX6496) 24 32
IN Undervoltage Lockout VIN rising, enables GATE 4.75 5 5.25 V
IN Undervoltage Lockout
Hysteresis VIN falling, disables GATE 155 mV
OVSET Threshold Voltage
(MAX6495/MAX6496)
VTH+ OVSET rising 1.22 1.24 1.26 V
VTH- OVSET falling 1.18
OVSET Threshold Hysteresis
(MAX6495/MAX6496) VHYST OVSET falling 5 %
OVSET Threshold Voltage
(MAX6497/MAX6498)
VTH+ OVSET rising 0.494 0.505 0.518 V
VTH- OVSET falling 0.13
OVSET Threshold Voltage
(MAX6499)
VTH+ OVSET rising 1.22 1.24 1.26 V
VTH- OVSET falling 1.18
UVSET Threshold Voltage
(MAX6499)
VTH+ UVSET rising 1.22 1.24 1.26 V
VTH- UVSET falling 1.18
OVSET/UVSET Threshold
Hysteresis (MAX6499) VHYST OVSET falling 5 %
POKSET Threshold Voltage
(MAX6497/MAX6498)
VPOKSET+ POKSET rising 1.22 1.24 1.26 V
VPOKSET- POKSET falling 1.18
POKSET Threshold
Hysteresis (MAX6497/
MAX6498)
VHYST POKSET falling 5 %
OVSET, UVSET, POKSET
Input Current ISET -50 +50 nA
Startup Response Time tSTART SHDN rising (Note 2) 100 µs
GATE Rise Time GATE rising from GND to VOUTFB + 8V,
OUTFB = GND 1 ms
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
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(VIN = 14V, CGATE = 6nF, TA = -40°C to +125°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1)
Note 1: Specifications to TA = -40°C are guaranteed by design and not production tested.
Note 2: The MAX6495–MAX6499 power up with the external MOSFET in off mode (VGATE = GND). The external MOSFET turns on
tSTART after all input conditions are valid.
Note 3: For accurate overtemperature-shutdown performance, place the device in close thermal contact with the external MOSFET.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
OVSET to GATE Propagation
Delay tOV SET rising from VTH - 100mV to VTH + 100mV 0.6 µs
UVSET to GATE, POKSET to
POK Propagation Delay
POKSET, UVSET falling from VTH + 100mV to
VTH - 100mV 20 µs
GATE Output High Voltage VOH
VOUTFB = VIN = 5.5V, RGATE to IN = 1MΩ VIN + 3.4 VIN + 3.8 VIN + 4.2 V
VOUTFB = VIN, VIN ≥ 14V, RGATE to IN = 1MΩ VIN + 8 VIN + 10 VIN + 11
GATE Output Low Voltage VOL
GATE sinking 15mA, OUTFB = GND 1V
VIN = 5.5V, GATE sinking 1mA, OUTFB = GND 0.9
GATE Charge-Pump Current IGATE GATE = GND 100 µA
GATE to OUTFB Clamp
Voltage VCLMP 12 18 V
IN to GATEP Output Low
Voltage IGATEP_SINK = 75µA, IGATEP_SOURCE = 1µA 7.5 11.7 V
IN to GATEP Clamp Voltage VIN = 24V, IGATEP_SOURCE = 10µA 12 18 V
SHDN, CLEAR Logic-High
Input Voltage VIH 1.4
V
SHDN, CLEAR Logic-Low
Input Voltage VIL 0.4
SHDN Input Pulse Width 7µs
CLEAR Input Pulse Width 0.5 µs
SHDN, CLEAR Input
Pulldown Current SHDN is Internally pulled down to GND 0.6 1.0 1.4 µA
Thermal Shutdown (Note 3) +160 °C
Thermal-Shutdown
Hysteresis 20 °C
POKSET to POK Delay
(MAX6497/MAX6498) 35 µs
POK Output Low Voltage
(MAX6497/MAX6498) VOL
VIN ≥ 14V, POKSET = GND, ISINK = 3.2mA 0.4 V
VIN ≥ 2.8V, POKSET = GND, ISINK = 100µA 0.4
POK Leakage Current
(MAX6497/MAX6498) VPOKSET = 14V 100 nA
Electrical Characteristics (continued)
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
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(VIN = +12V, TA = +25°C, unless otherwise noted.)
Typical Operating Characteristics
SUPPLY CURRENT vs. TEMPERATURE
MAX6495 toc02
TEMPERATURE (°C)
SUPPLY CURRENT (µA)
11095-25 -10 5 35 50 6520 80
102.5
105.0
107.5
110.0
112.5
115.0
117.5
120.0
100.0
-40 125
SET = GND, GATE ENHANCED
SHUTDOWN SUPPLY CURRENT
vs. SUPPLY VOLTAGE
MAX6495 toc03
SUPPLY VOLTAGE (V)
SHUTDOWN SUPPLY CURRENT (µA)
655545352515
20
30
40
50
10
5 75
SET = GND, SHDN = GND
MAX6496
GATE VOLTAGE vs. SUPPLY VOLTAGE
MAX6495 toc04
SUPPLY VOLTAGE (V)
VGATE - VIN (V)
655545352515
3
6
9
12
0
5 75
SET = GND, IN = OUTFB = SHDN
GATEP VOLTAGE vs. SUPPLY VOLTAGE
MAX6495 toc05
SUPPLY VOLTAGE (V)
V
IN
- V
GATEP
(V)
655545352515
3
6
9
12
0
5 75
SET = GND, IN = OUTFB = SHDN
UVLO THRESHOLD vs. TEMPERATURE
MAX6495 toc06
TEMPERATURE (°C)
UVLO THRESHOLD (V)
1109565 80-10 5 20 35 50-25
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
4.5
-40 125
SET = GND, IN = OUTFB = SHDN
FALLING
RISING
SET THRESHOLD vs. TEMPERATURE
MAX6495 toc07
TEMPERATURE (°C)
SET THRESHOLD (V)
1109580655035205-10-25
1.15
1.20
1.25
1.30
1.35
1.40
1.10
-40 125
IN = SHDN
FALLING
RISING
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
MAX6495 toc01
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (µA)
655545352515
35
60
85
110
135
10
5 75
SET = GND, GATE ENHANCED
GATE TO OUTFB CLAMP VOLTAGE
vs. TEMPERATURE
MAX6495 toc08
TEMPERATURE (°C)
VGATE - VOUTFB (V)
1109565 80-10 5 20 35 50-25
15.6
15.7
15.8
15.9
16.0
16.1
16.2
16.3
16.4
16.5
15.5
-40 125
SET = OUTFB = GND
IN = SHDN
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
Maxim Integrated
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(VIN = +12V, TA = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
STARTUP WAVEFORM
(CIN = 100µF, COUT = 10µF, ROUT = 100Ω)
MAX6495 toc09
400µs/div
VIN
10V/div
VGATE
10V/div
VOUT
10V/div
STARTUP FROM SHUTDOWN
(CIN = 100µF, COUT = 10µF, ROUT = 100Ω)
MAX6495 toc10
400µs/div
VSHDN
1V/div
VGATE
10V/div
VOUT
10V/div
OVERVOLTAGE SWITCH FAULT
(CIN = 100µF, COUT = 10µF, ROUT = 100Ω)
MAX6495 toc11
200µs/div
VIN
20V/div
VGATE
20V/div
VOUT
20V/div
OVERVOLTAGE LIMITER
(CIN = 100µF, COUT = 10µF, ROUT = 100Ω)
MAX6495 toc12
400µs/div
VIN
20V/div
VGATE
20V/div
VOUT
20V/div
TRIP THRESHOLD = 28V
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
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Pin Congurations
1 3 4
8 6 5
N.C. GATE GND
MAX6496
2
7
OUTFB
IN OVSET GATEPSHDN
3mm x 3mm TDFN
TOP VIEW
1 3 4
8 6 5
POKSET GATE GND
MAX6497
MAX6498
2
7
OUTFB
IN OVSET POKSHDN
3mm x 3mm TDFN
1 3 4
8 6 5
UVSET GATE GND
MAX6499
2
7
OUTFB
IN OVSETCLEARSHDN
3mm x 3mm TDFN
1 2 3
6 5 4
IN SHDN OVSET
OUTFB GATE GND
MAX6495
3mm x 3mm TDFN
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
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Pin Descriptions
PIN
NAME FUNCTION
MAX6495 MAX6496 MAX6497/
MAX6498 MAX6499
1 1 1 1 IN Positive Supply Voltage. Connect IN to the positive side of the input
voltage. Bypass IN with a 10µF capacitor to GND.
2 2 2 2 SHDN
Shutdown Input. Drive SHDN low to force GATE low and turn off
the external nMOSFET. Drive SHDN low and then high to reset the
overvoltage-condition latch. SHDN is internally pulled to GND with 1µA
of current. Connect SHDN to IN for normal operation.
3 3 3 3 OVSET
Overvoltage-Threshold Adjustment Input. Connect OVSET to an
external resistive voltage-divider network to adjust the desired
overvoltage-disable or overvoltage-limit threshold. Connect the resistor
network to the input side (drain) of the nMOSFET for overvoltage switch
turn-off applications or to the output side (source) of the nMOSFET for
overvoltage-limiting applications (MAX6495/MAX6496/MAX6499).
4 5 5 5 GND Ground
5 6 6 6 GATE
Gate-Driver Output. Connect GATE to the gate of the external
n-channel MOSFET switch. GATE is the output of a charge pump with
a 100µA pullup current to 10V (typ) above IN during normal operation.
GATE is quickly clamped to OUTFB during an overvoltage condition.
GATE pulls low when SHDN is low.
6 7 7 7 OUTFB Output-Voltage-Sense Input. Connect OUTFB to the source of the
external nMOSFET switch.
— 4 — — GATEP
p-Channel Gate-Driver Output. Connect GATEP to the gate of an external
pMOSFET to provide low-drop reverse-voltage protection. GATEP is
biased to ensure that the pMOSFET is on during normal operating modes,
the gate-to-source is not overstressed during load-dump/overvoltage
conditions, and the pMOSFET is off during reverse-battery conditions.
— 8 — — N.C. No Connection. Not internally connected.
— — 4 — POK
Power-OK Output. POK is an open-drain output. POK remains low
while POKSET is below the internal POKSET threshold. POK goes high
impedance when POKSET goes above the internal POKSET threshold.
Connect POK to an external pullup resistor.
— — 8 — POKSET
Power-OK Threshold-Adjustment Input. POK remains low while POKSET
is below the internal POKSET threshold (1.18V). POK goes high
impedance when POKSET goes above the internal POKSET threshold
(1.24V). Connect a resistive divider from OUTFB to GND, and the divider
center node to POKSET, to adjust the desired undervoltage threshold.
— — — 4 CLEAR
Latch Clear Input. Connect CLEAR to a logic-high to latch the device off after an
overvoltage condition. With OVSET below VTH, pulse CLEAR low (5µs typ) to
reset the output latch. Connect CLEAR to GND to make the latch transparent.
— — — 8 UVSET Undervoltage-Threshold Adjustment Input. Connect UVSET to an external
resistive voltage-divider network to adjust the desired undervoltage threshold.
— — — — EP
Exposed Pad. EP is internally connected to GND. Connect EP to the
ground plane to provide a low thermal-resistance path from the IC junction
to the PC board. Do not use as the primary electrical connection to GND.
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
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Detailed Description
Overvoltage Monitoring
When operating in overvoltage mode, the MAX6495–
MAX6499 feedback path (Figure 1) consists of IN,
OVSET’s internal comparator, the internal gate charge
pump, and the external nMOSFET, resulting in a switch-
on/off function. When the programmed overvoltage
threshold is tripped, the internal fast comparator turns off
the external MOSFET, clamping GATE to OUTFB within
0.5μs and disconnecting the power source from the load.
When IN decreases below the adjusted overvoltage
threshold, the MAX6495–MAX6499 slowly enhance GATE
above OUTFB, reconnecting the load to the power source.
Overvoltage Limiter
(MAX6495/MAX6496/MAX6499)
When operating in overvoltage-limiter mode, the
MAX6495/MAX6496/MAX6499 feedback path (Figure 2)
consists of OUTFB, OVSET’s internal comparator, the
internal gate charge pump, and the external n-channel
MOSFET, resulting in the external MOSFET operating as
a voltage regulator.
During normal operation, GATE is enhanced 10V above
OUTFB. The external MOSFET source voltage is monitored
through a resistive divider between OUTFB and OVSET.
When OUTFB rises above the adjusted overvoltage
threshold, an internal comparator sinks the charge-
pump current, discharging the external GATE, regulating
OUTFB at the OVSET overvoltage threshold. OUTFB
remains active during the overvoltage transients and the
MOSFET continues to conduct during the overvoltage
event, operating in switched-linear mode.
As the transient begins decreasing, OUTFB fall time
will depend on the MOSFET’s GATE charge, the internal
charge-pump current, the output load, and the tank
capacitor at OUTFB.
For fast-rising transients and very large-sized MOSFETs,
add an additional bypass capacitor from GATE to GND
to reduce the effect of the fast-rising voltages at IN.
The external capacitor acts as a voltage-divider working
against the MOSFET’s drain-to-gate capacitance. For a
6000pF gate-to-source capacitance, a 0.1μF capacitor at
GATE will reduce the impact of the fast-rising VIN input.
Caution must be exercised when operating the MAX6495/
MAX6496/MAX6499 in voltage-limiting mode for long
durations. If the VIN is a DC voltage greater than the
MOSFET’s maximum gate voltage, the MOSFET dissi-
pates power continuously. To prevent damage to the exter-
nal MOSFET, proper heatsinking should be implemented.
GATE Voltage
The MAX6495–MAX6499 use a high-efficiency charge
pump to generate the GATE voltage. Upon VIN exceed-
ing the 5V (typ) UVLO threshold, GATE enhances 10V
above VIN (for VIN ≥ 14V) with a 100μA pullup current. An
overvoltage condition occurs when the voltage at OVSET
goes above its VTH+ threshold. When the threshold is
crossed, GATE falls to OUTFB within 0.5μs with a 100mA
pulldown current. The MAX6495–MAX6499 include an
internal clamp to OUTFB that ensures GATE is limited to
18V (max) above OUTFB to prevent gate-to-source dam-
age of the external MOSFET.
Figure 1. Overvoltage Threshold (MAX6495–MAX6499)
Figure 2. Overvoltage-Limiter Protection Switch Configuration
OVSET
GND
GATE
IN OUTFB
R1
VIN VOUT
R2
MAX6495–
MAX6499
OVSET
GND
GATE
IN OUTFB
R1
COUT
VIN VOUT
R2
MAX6495
MAX6496
MAX6499
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
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The gate cycles during overvoltage-limit and overvoltage-
switch modes are quite similar but have distinct characteristics.
In overvoltage-switch mode, GATE is enhanced to (VIN
+ 10V) while the monitored VIN voltage remains below
the overvoltage fault threshold (OVSET < VTH+). When
an overvoltage fault occurs (OVSET ≥ VTH+), GATE is
pulled one diode drop below OUTFB, turning off the external
MOSFET and disconnecting the load from the input.
GATE remains low (MOSFET off) as long as the VIN voltage
is above the overvoltage fault threshold. As VIN falls back
below the overvoltage fault threshold, GATE is again
enhanced to (VIN + 10V).
In overvoltage-limit mode, GATE is enhanced to (VIN
+10V) while the monitored OUTFB voltage remains below
the overvoltage fault threshold (OVSET < VTH+). When
an overvoltage fault occurs (OVSET ≥ VTH+), GATE is
pulled one diode drop below OUTFB until OUTFB drops
5% below the overvoltage fault threshold (MAX6495/
MAX6496/MAX6499). GATE is then turned back on until
OUTFB reaches the overvoltage fault threshold and
GATE is again turned off. GATE cycles in a saw-tooth
waveform until OUTFB remains below the overvoltage
fault threshold and GATE remains constantly on (VIN
+10V). The overvoltage limiter’s sawtooth GATE output
operates the MOSFET in a switched-linear mode while
the input voltage remains above the overvoltage fault
threshold. The sawtooth frequency depends on the load
capacitance, load current, and MOSFET turn-on time
(GATE charge current and GATE capacitance).
GATE goes high when the following startup conditions are
met: VIN is above the UVLO threshold, SHDN is high, an
overvoltage fault is not present, and the device is not in
thermal shutdown.
Undervoltage Monitoring (MAX6499)
The MAX6499 includes undervoltage and overvoltage
comparators for window detection (see Figure 3 and
Figure 12). GATE is enhanced and the nMOSFET is
on when the monitored voltage is within the selected
“window.” When the monitored voltage falls below
the lower limit (VTRIPLOW) or exceeds the upper limit
(VTRIPHIGH) of the window, GATE falls to OUTFB turning
off the MOSFET. The application in Figure 3 shows
the MAX6499 enabling the DC-DC converter when the
monitored voltage is in the selected window.
The resistor values R1, R2, and R3 can be calculated
as follows:
( )
( )
TOTAL
TRIPLOW TH
TOTAL
TRIPHIGH TH
R
V V R2 R3
R
V V R3
−
+
=
+
=
where RTOTAL = R1 + R2 + R3.
Use the following steps to determine the values for R1,
R2, and R3:
1) Choose a value for RTOTAL, the sum of R1, R2, and
R3. Because the MAX6499 has very high input impedance,
RTOTAL can be up to 5MΩ.
2) Calculate R3 based on RTOTAL and the desired upper
trip point:
TH TOTAL
TRIPHIGH
V R
R3 V
+×
=
3) Calculate R2 based on RTOTAL, R3, and the desired
lower trip point:
( )
TH TOTAL
TRIPLOW
V R
R2 R3
V
−
×
= −
4) Calculate R1 based on RTOTAL, R2, and R3:
R1 = RTOTAL – R2 – R3
To improve ESD protection, keep R3 ≥ 1kΩ.
Figure 3. MAX6499 Window-Detector Circuit
OVSET
GND
CLEAR
GATE OUTFB
IN
SHDN
UVSET
R2
VIN
R3
R1
MAX6499
DC-DC
CONVERTER
GND
IN OUT
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
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Power-OK Output (MAX6497/MAX6498)
POK is an open-drain output that remains low when the voltage
at POKSET is below the internal POKSET threshold
(1.18V). POK goes high impedance when POKSET goes
above the internal POKSET threshold (1.24V). Connect
a resistive divider from OUTFB to GND, and the divider
center node to POKSET, to adjust the desired undervoltage
threshold. Use a resistor in the 100kΩ range from POKSET
to GND to minimize current consumption.
Overvoltage Latch Function
The MAX6497/MAX6499 offers a latch function that prevents
the external MOSFET from turning on until the latch is
cleared. For the MAX6497, the latch can be cleared by
cycling the power on the input IN to a voltage below the
undervoltage lockout or by pulling the shutdown input low
and then back to a logic-high state. The MAX6499 offers a
CLEAR input that latches the nMOSFET off when CLEAR is
high. The latch is removed when the CLEAR input is pulsed
low. Connect CLEAR low to make the latch transparent.
Overvoltage Retry Function
The MAX6498 offers an automatic retry function that tries
to enhance the external nMOSFET after the overvoltage
condition is removed. When the monitored input voltage
detects an overvoltage condition (VSET > VTH+), the
nMOSFET is turned off. The MOSFET stays off until the
voltage at VSET falls below its VTH- (typically 0.13V), at
which point the output tries to turn on again.
Applications Information
Load Dump
Most automotive applications run off a multicell “12V”
lead-acid battery with a nominal voltage that swings
between 9V and 16V (depending on load current,
charging status, temperature, battery age, etc.). The
battery voltage is distributed throughout the automobile
and is locally regulated down to voltages required by
the different system modules. Load dump occurs when
the alternator is charging the battery and the battery
becomes disconnected. The alternator voltage regulator is
temporarily driven out of control. Power from the alternator
flows into the distributed power system and elevates the
voltage seen at each module. The voltage spikes have
rise times typically greater than 5ms and decays within
several hundred milliseconds but can extend out to 1s
or more depending on the characteristics of the charging
system. These transients are capable of destroying sensitive
electronic equipment on the first “fault event.”
Setting Overvoltage Thresholds
OVSET provides an accurate means to set the overvoltage
level for the devices. Use a resistive divider to set the
desired overvoltage condition (see Figure 2). OVSET has a
rising 1.24V threshold with a 5% falling hysteresis (MAX6495/
MAX6496/MAX6499) and a rising 0.505V threshold with a
falling 0.15V threshold (MAX6497/MAX6498).
Begin by selecting the total end-to-end resistance,
RTOTAL = R1 + R2. Choose RTOTAL to yield a total
current equivalent to a minimum 100 x ISET (OVSET’s
input bias current) at the desired overvoltage threshold.
For example:
With an overvoltage threshold (VOV) set to 20V for the
MAX6495/MAX6496/MAX6499, RTOTAL < 20V/(100 x
ISET),
where ISET is OVSET’s 50nA (max) input bias current.
RTOTAL < 4MΩ
Use the following formula to calculate R2:
TOTAL
TH OV
R
R2 V V
+
= ×
where VTH+ is the 1.24V OVSET rising threshold and
VOV is the desired overvoltage threshold.
R2 = 248kΩ. Use a 249kΩ standard resistor.
RTOTAL = R2 + R1, where R1 = 3.751MΩ. Use a 3.74MΩ
standard resistor.
A lower value for total resistance dissipates more power
but provides slightly better accuracy. To improve ESD
protection, keep R2 ≥ 1kΩ.
Reverse-Battery Protection
The MAX6496 is an overvoltage-protection circuit that is
capable of driving a pMOSFET to prevent reverse-battery
conditions. This MOSFET eliminates the need for external
diodes, thus minimizing the input voltage drop (see Figure 8).
Inrush/Slew-Rate Control
Inrush current control can be implemented by placing a
capacitor from GATE to GND to slowly ramp up the GATE,
thus limiting the inrush current and controlling GATE’s
slew rate during initial turn-on. The inrush current can be
approximated using the following equation:
OUT
INRUSH GATE LOAD
GATE
C
I I I
C
= ×+
where IGATE is GATE’s 100μA sourcing current, ILOAD
is the load current at startup, and COUT is the output
capacitor.
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
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MOSFET Selection
Select external MOSFETs according to the application current
level. The MOSFET’s on-resistance (RDS(ON)) should be
chosen low enough to have a minimum voltage drop at
full load to limit the MOSFET power dissipation. Determine
the device power rating to accommodate an overvoltage
fault when operating the MAX6495/MAX6496/MAX6499 in
overvoltage-limit mode.
During normal operation, the external MOSFET dissipates
little power. The power dissipated in the MOSFET during
normal operation is:
P = ILOAD2 x RDS(ON)
where P is the power dissipated in the MOSFET, ILOAD
is the output load current, and RDS(ON) is the drain-to-
source resistance of the MOSFET.
Most power dissipation in the MOSFET occurs during a
prolonged overvoltage event when operating the
MAX6495/MAX6496/MAX6499 in voltage-limiter mode.
The power dissipated across the MOSFET is as follows
(see the Thermal Shutdown in Overvoltage-Limiter Mode
section):
P = VDS x ILOAD
where VDS is the voltage across the MOSFET’s drain
and source.
Thermal Shutdown
The devices’ thermal-shutdown feature turns off GATE
if it exceeds the maximum allowable thermal dissipa-
tion. Thermal shutdown also monitors the PC board
temperature of the external nMOSFET when the devic-
es sit on the same thermal island. Good thermal con-
tact between the MAX6495–MAX6499 and the external
nMOSFET is essential for the thermal-shutdown feature
to operate effectively. Place the nMOSFET as close to
possible to OUTFB.
When the junction temperature exceeds TJ = +160°C, the
thermal sensor signals the shutdown logic, turning off the
GATE output and allowing the device to cool. The thermal
sensor turns the GATE on again after the IC’s junction
temperature cools by 20°C. Thermal-overload protection
is designed to protect the MAX6495–MAX6499 and the
external MOSFET in the event of current-limit fault condi-
tions. For continuous operation, do not exceed the abso-
lute maximum junction temperature rating of TJ = +150°C.
Peak Power-Dissipation Limit
The devices activate an internal 100mA pulldown on
GATE when SHDN goes low, OVSET exceeds its
threshold or UVSET falls below its threshold. Once
the voltage on GATE falls below the OUTFB voltage,
current begins to flow from OUTFB to the 100mA pull-
down through the internal clamp diode, discharging the
output capacitors.
Depending on the output capacitance and the initial volt-
age, a significant amount of energy may be dissipated by
the internal 100mA pulldown. To prevent damage to the
device ensure that for a given overvoltage threshold, the
output capacitance does not exceed the limit provided in
Figure 4. This output capacitance represents the sum of
all capacitors connected to OUTFB, including reservoir
capacitors and DC-DC input filter capacitors.
Thermal Shutdown in Overvoltage-Limiter Mode
When operating the MAX6495/MAX6496/MAX6499 in
overvoltage-limit mode for a prolonged period of time, a
thermal shutdown is possible. The thermal shutdown is
dependent on a number of different factors:
●The device’s ambient temperature
●The output capacitor (COUT)
●The output load current (IOUT)
●The overvoltage threshold limit (VOV)
●The overvoltage waveform period (tOV)
●The power dissipated across the package (PDISS)
Figure 4. Safe Operating Area for 100mA Pulldown
MAXIMUM OUTPUT CAPACITANCE
vs. OVERVOLTAGE THRESHOLD
MAX6495 fig04
OVERVOLTAGE THRESHOLD (V)
MAXIMUM OUTPUT CAPACITANCE (µF)
605040302010
100
1000
10,000
100,000
10
0 70
SAFE OPERATING AREA
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
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During an initial overvoltage occurrence, the discharge
time (Δt1) of COUT, caused by IOUT and IGATEPD. The
discharge time is approximately:
OV
1 OUT OUT GATEPD
V 0.05
t C (I I )
×
∆= +
where VOV is the overvoltage threshold, IOUT is the load
current, and IGATEPD is the GATE’s 100mA pulldown
current.
Upon OUT falling below the threshold point, the MAX6495/
MAX6496/MAX6499s’ charge-pump current must recover
and begins recharging the external GATE voltage. The
time needed to recharge GATE from -VD to the MOSFET’s
gate threshold voltage is:
GS(TH) D
2 ISS GATE
V V
t C I
+
∆=
where CISS is the MOSFET’s input capacitance, VGS(TH)
is the MOSFET’s gate threshold voltage, VD is the internal
clamp (from OUTFB to GATE) diode’s forward voltage (1.5V,
typ) and IGATE is the charge-pump current (100μA typ).
During Δt2, COUT loses charge through the output load.
The voltage across COUT (ΔV2) decreases until the
MOSFET reaches its VGS(TH) threshold and can be
approximated using the following formula:
2
2 OUT OUT
t
V I C
∆
∆=
Once the MOSFET VGS(TH) is obtained, the slope of the
output-voltage rise is determined by the MOSFET Qg
charge through the internal charge pump with respect to
the drain potential. The new rise time needed to reach
a new overvoltage event can be calculated using the
following formula:
GD OUT
3GS GATE
QV
t
VI
∆
∆≅
where QGD is the gate-to-drain charge.
The total period of the overvoltage waveform can be
summed up as follows:
ΔtOV = Δt1 + Δt2 + Δt3
The MAX6495/MAX6496/MAX6499 dissipate the most
power during an overvoltage event when IOUT = 0. The
maximum power dissipation can be approximated using
the following equation:
1
DISS OV GATEPD OV
t
P V 0.975 I t
∆
=×× ×
∆
The die-temperature increase is related to θJC (8.3°C/W
and 8.5°C/W for the MAX6495/MAX6496/MAX6499,
respectively) of the package when mounted correctly
with a strong thermal contact to the circuit board.
The MAX6495/MAX6496/MAX6499 thermal shutdown is
governed by the equation:
TJ = TA + PDISS (θJC +θCA) < +170°C
Based on these calculations, the parameters of the
MOSFET, the overvoltage threshold, the output load
current, and the output capacitors are external variables
affecting the junction temperature. If these parameters
are fixed, the junction temperature can also be affected
by increasing Δt3, which is the time the switch is on. By
increasing the capacitance at the GATE pin, Δt3 increases
as it increases the amount of time required to charge
up this additional capacitance (75μA gate current). As
a result, ΔtOV increases, thereby reducing the power
dissipated (PDISS).
Figure 5. MAX6495/MAX6496/MAX6499 Timing
t2
t1
GATE
OUTFB
tOV
t3
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
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Figure 6. Overvoltage Limiter (MAX6495)
Figure 8. Overvoltage Protection to a DC-DC Converter
(MAX6497/MAX6498)
Figure 7. Overvoltage Limiter with Low-Voltage-Drop Reverse-
Protection Circuit (MAX6496)
Figure 9. Overvoltage and Undervoltage Window Detector
(MAX6499)
Typical Application Circuits
OVSET
GND
GATE
IN
SHDN
OUTFB
12V IN
MAX6495
DC-DC
CONVERTER
GND
IN OUT
OVSET
GNDPOK
GATE OUTFB
POKSET
SHDN
IN
12V
MAX6497
MAX6498
DC-DC
CONVERTER
GNDEN
IN OUT
OVSET
GND
CLEAR
GATE OUTFB
IN
SHDN
UVSET
R2
12V
R3
R1
MAX6499
DC-DC
CONVERTER
GND
IN OUT
OVSET
GND
GATE
IN
SHDN
GATEP
OUTFB
12V
MAX6496
DC-DC
CONVERTER
GND
IN OUT
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
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Figure 10. Functional Diagram (MAX6495)
Figure 12. Functional Diagram (MAX6497/MAX6498)
Figure 11. Functional Diagram (MAX6496)
Figure 13. Functional Diagram (MAX6499)
Functional Diagrams
MAX6495
5V
IN
UVLO
1.24V
OVSET
GATE
OUTFB
GND
SHDN
10V
CHARGE
PUMP
THERMAL
PROTECTION
MAX6497
MAX6498
5V
IN
UVLO
0.505V
1.24V
OVSET
GATE
OUTFB
GND
SHDN
10V
CHARGE
PUMP
THERMAL
PROTECTION
POK
POKSET
MAX6499
5V
IN
UVLO
1.24V
OVSET
1.24V
UVSET
GATE
OUTFB
GND
CLEAR
SHDN
10V
CHARGE
PUMP
THERMAL
PROTECTION
MAX6496
5V
IN
UVLO
1.24V
OVSET
GATEP
IGATEP_SOURCE
GATE
OUTFB
GND
SHDN
10V
CHARGE
PUMP
THERMAL
PROTECTION
10V
MAX6495–MAX6499 72V, Overvoltage-Protection
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Note: All devices are specified over the -40°C to +125°C operating
temperature range.
+Denotes a lead(Pb)-free/RoHS-compliant package.
T = Tape and reel.
*EP = Exposed pad.
/V denotes an automotive qualified part.
Selector Guide
Package Information
For the latest package outline information and land patterns
(footprints), go to www.maximintegrated.com/packages. Note
that a “+”, “#”, or “-” in the package code indicates RoHS status
only. Package drawings may show a different suffix character, but
the drawing pertains to the package regardless of RoHS status.
Chip Information
PROCESS: BiCMOS
Ordering Information
PART Function p-CHANNEL
DRIVER
POK
FUNCTION UNDERVOLTAGE LATCH/
AUTORETRY PACKAGE CODE
MAX6495 OV Switch/Limiter — — — — T633-2
MAX6496 OV Switch/Limiter Yes — — — T833-2
MAX6497 OV Switch — Yes — Latch T833-2
MAX6498 OV Switch — Yes — Autoretry T833-2
MAX6499 OV/UV Switch/Limiter — — Yes Latch T833-2
PART PIN-PACKAGE TOP MARK
MAX6495ATT+T 6 TDFN-EP* AJM
MAX6495ATT/V+T 6 TDFN-EP* AUG
MAX6496ATA+T 8 TDFN-EP* AOF
MAX6496ATA/V+T 8 TDFN-EP* AOF
MAX6497ATA+T 8 TDFN-EP* AOC
MAX6498ATA+T 8 TDFN-EP* AOD
MAX6499ATA+T 8 TDFN-EP* AOE
MAX6499ATA/V+T 8 TDFN-EP* AOE PACKAGE
TYPE
PACKAGE
CODE
OUTLINE
NO.
LAND
PATTERN NO.
6 TDFN-EP T633+2 21-0137 90-0058
8 TDFN-EP T833+2 21-0137 90-0059
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
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Revision History
REVISION
NUMBER
REVISION
DATE DESCRIPTION PAGES
CHANGED
0 7/05 Initial release. —
1 12/05 Corrected text and formula in the Detailed Description. 10, 11
2 1/07 Updated text in the Applications Information. 9
3 12/08 Updated package codes in the Selector Guide. 1, 13
4 1/09 Added automotive qualied part for MAX6495. 1, 14
5 3/09 Updated Electrical Characteristics, added Peak Power Dissipation Limit section
and new Figure 4. Renumbered subsequent gures throughout data sheet. 3, 9, 10–15
6 7/09 Corrected the MAX6495ATT/V+T top mark in the Ordering Information table from
AJM to AUG. 2
7 8/09 Updated Undervoltage Monitoring (MAX6499) and Setting Overvoltage
Thresholds sections. 8, 9
8 1/11 Added soldering temperature in the Absolute Maximum Ratings section and
corrected equation. 2, 11
9 2/12 Added automotive package for MAX6499. 15
10 6/12 Added automotive package for MAX6496. 15
11 4/15 Updated Benets and Features section. 1
12 12/15 Corrected error in data sheet that repeated MAX6496 and excluded MAX6495 1–15
13 6/17 Update pin descriptions and POKSET divider wording 7, 10
14 7/17 Added AEC-Q100 Qualied statement to Benets and Features section 1
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses
are implied. Maxim Integrated reserves the right to change the circuitry and specications without notice at any time. The parametric values (min and max limits)
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.
MAX6495–MAX6499 72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
© 2017 Maxim Integrated Products, Inc.
│
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For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim Integrated’s website at www.maximintegrated.com.
