FAST RECOVERY SILICON RECTIFIERS
. . . designed for special applications such as high frequency rectifica-
tion, inverters, free-wheeling diodes. and other fast switching circuits.
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Acomplete line of rectifiers ;a~ring”t~pical recovery time of 0:1 ●
microseconds providing high efficiency at frequencies of 250 kHz and
higher. ●
MA=MUM RATINGS
10* ●
lFM(surge)** vRM(rep) ‘RM(wkg)’ ‘R(volts)
Ampere Ampere 50 100 200 300 400 600 ●
,
11N4S33 thru
11N3S79 thru
11N3SS9 thru
‘lN~~99 thru
1N4937
1N3SS3
1N3S93
WW3903
1I------- ... .
I1
12
I
!F~e ‘--~;?~;
1N3880 1N3890 1N3891 1N3892 1N3893 MR137~
20 I I NIRQO I1N3900 1N3901 1N3902 1N3903 MR1386,
*Fi~re 3....+.’
II.-, ---- . . .
30 300 I1N3909 ]1N391O11N3911 I1
Characteristic
*
.$:,:~~~?
M~imum Junction Operating
Temperature Range
Maximum Case Storage
Temperature Range
,:,.
DC Fo~rd Voltage Drop (IF =12 Adc, Tc =25”C) ‘F 1.4 Vdc
DC Reverse Current (Rated VR) T(E =25° C~0.025 mA
o
T(; =100 c3.0
1N3899 thru 1N3903, MR1386
DC Forward Vol@ge Drop (IF =20 Adc, TA =25”C) ‘F 1.4 Vdc
DC Reverse Urrent (Wed VR) Tli =25”c ~0.05 d
w~l
DC Forward VOltaSS Drop (IF =30 Adc, T& =25° C)
.. 11
IDC Reverse Current (Rated VR) TIL =25° Ctk0.08 mA
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ILICON RECTIF
50-600 VOLTS
DIFFUSED JUNCTION
1, 0 – 30 AMPERE
\
O. 2MS RECOVERY TIME
\
ERS
\
\JANUARY 1967 -PS 12
\
‘,,
~\
\
1. OAMPERE
1N4933-1N4937
CASE 59
3.0 AMPERE
MR830-MR836
CASE 60
6.0 AMPERE
1N3879-1N3883
MR1366
12 AMPERE
1N3889- 1N3893
MR1376
CASE 56A (DO-4)
20 AMPERE
1N3899-1N3903
MR1386
30 AMPERE
1N3909-1N3913
MR1396
CASE 42
NOTE: For stud mounted
devices, standard polarity is
cathode-connected- to-case.
Reverse polarity is designated
by adding “R” suffix to type number.
o
‘A =100c10
‘@
,4 SUBSIDIARY OF MOTOROLA IN=
—— .- —— .--—
REVERSE RECOVERY T~E CHARACTERISTICS
Characteristics Symbl Max Limit Unit
Maximum Reverse RecQvery Time t~s
(lW =1.0 Amp rein, Fiwre 2t.st “
1’
circuit) All Types !‘“2 u
r
Matim”m Overshoot Current
(Fi~re.2) I1
0s I I Amp I
1N4933, MR830, 1N3879, IN3889 Series
MR1366, MR1367 I2.0 II
1N3899, 1N3909 Series
MR1 386, MR1 396 3.0
FIGURE 1, TYPICAL RECOVERY PATTERN
1I I I I I I I 1
1.OAM PD1VIS1ON
II,
25 ns/DIVISION
FIGURE 2-TEST CIRCUIT A_
RI -
115 Vac 10 kn 30 n
60 HZ 2.OW 50 w
/UNDER TEST R2 –
C. P. CLARE
HPG 1002 ‘A =
30,,c-~ ~,~ ~R2
CONSTANT VOLTAGE 1.OUF
SUPPLY 300 v300 v
+D =1/20 M=dc to 2. OkHz.
FIGURE 3-MA=MUM CURRENT RATING ~9UR&4 -MAX~UM ALLOWABLE SURGE CURRENT
TcCASE TEMPE%W.@t&:J~) —ST~ MOUNTED NUMBER OF CYCLES AT 60 HZ
TA, AM’BIENT TEMPE&:~,U@ (o c) —LEAD MOUNTED
F0.45MAX DIA
@
035 MAX DIA
$
rCATHOOE
100 @OIA
MIN
030 MM
t
1,00 ANOOE
MIN
L
-DIA
CASE 56A
(DO-4)
aes
0.250 MAX
+
0.060 MIN DIA Too
O* MAX
0.175 0.405
MAX
r~
10.32 UNF-2A 0.453
CASE 42 =7
[1
0.687
(DO-5)
0080
MAX @
e
0667
MAX
%
k-
DIA 0.375
0.140 ,A MAX
~5 D
,,~ ~:
mo ~o 453
>4.38.” NF.2A
@
MO rOROLA Semiconductor P-ducts Inc.
BOX 955 ●PHOENIX, ARIZONA 85001 ●ASUBSIDIARY OF MOTOROLA INC.
2285-1 PRINTED IN USA 5-67 IMPERIAL L17H0 82085 n72
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