Technische Information / Technical Information IGBT-Module IGBT-Modules DD 1200 S 33 K2 Datenblatt datasheet Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Periodische Spitzensperrspannung repetitive peak reverse voltage Tj = 25C Tj = -25C Dauergleichstrom DC forward current VR 3300 3300 V IF 1200 A IFRM 2400 A 2 I t 500.000 A2 s Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode 2 I t - value, Diode VR = 0V, t p = 10ms, T Vj = 125C Spitzenverlustleistung der Diode maximum power dissipation diode Tj = 125C PRQM 1.200 kW Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 6.000 V Teilentladungs-Aussetzspannung partial discharge extinction voltage RMS, f = 50 Hz, Q PD 10 pC (acc. to IEC 1287) VISOL 2.600 V Charakteristische Werte / Characteristic values min. typ. max. - 2,80 3,50 - 2,80 3,50 V - 0,015 2,4 mA - 6 30 mA - 1025 - A - 1100 - A - 710 - As - 1320 - As - 730 - mWs - 1500 - mWs LsCE - 25 - nH RCC'+EE' - 0,32 - m Diode / Diode Durchlaspannung forward voltage Sperrstrom reverse current Ruckstromspitze peak reverse recovery current IF = 1200 A, V GE = 0V, Tvj = 25C VF IF = 1200 A, V GE = 0V, Tvj = 125C VCE = 3300V, T vj = 25C IR VCE = 3300V, T vj = 125C IF = 1200 A, - diF/dt = 3800 A/sec VR = 1800V, VGE = -10V, T vj = 25C IRM VR = 1800V, VGE = -10V, T vj = 125C Sperrverzogerungsladung recovered charge IF = 1200 A, - diF/dt = 3800 A/sec VR = 1800V, VGE = -10V, T vj = 25C Qr VR = 1800V, VGE = -10V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy V IF = 1200 A, - diF/dt = 3800 A/sec VR = 1800V, VGE = -10V, T vj = 25C Erec VR = 1800V, VGE = -10V, T vj = 125C Modulinduktivitat stray inductance module pro Diode / per diode Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip T = 25C, pro Diode / per diode prepared by: Jurgen Gottert date of publication : 08.06.99 approved by: Chr. Lubke: 04.10.99 revision: 2 1 (6) Datenblatt DD 1200 S 33 K2 04.10.99 Technische Information / Technical Information IGBT-Module IGBT-Modules DD 1200 S 33 K2 Datenblatt datasheet Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,0170 K/W - - 0,0085 K/W RthCK - 0,006 - K/W Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C pro Diode / per diode Innerer Warmewiderstand thermal resistance, junction to case pro Modul / per module Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthJC Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate AlSiC Innere Isolation internal insulation AlN Kriechstrecke creepage distance 32,2 mm Luftstrecke clearance 19,1 mm CTI comperative tracking index > 400 M1 Anzugsdrehmoment f. mech. Befestigung mounting torque terminals M4 Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque M2 terminals M8 Gewicht weight G 5 Nm 2 Nm 8 .. 10 Nm 1000 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 2 (6) Datenblatt DD 1200 S 33 K2 04.10.99 Technische Information / Technical Information IGBT-Module IGBT-Modules DD 1200 S 33 K2 Datenblatt datasheet Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 2400 2200 Tj = 25C Tj = 125C 2000 1800 IF [A] 1600 1400 1200 1000 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VF [V] 3 (6) Datenblatt DD 1200 S 33 K2 04.10.99 Technische Information / Technical Information IGBT-Module IGBT-Modules DD 1200 S 33 K2 Datenblatt datasheet Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) T vj= 125C 2600 2400 2200 2000 1800 1600 1400 IR [A] 1200 1000 800 600 400 200 0 0 500 1000 1500 2000 2500 3000 3500 VR [V] 4 (6) Datenblatt DD 1200 S 33 K2 04.10.99 Technische Information / Technical Information IGBT-Module IGBT-Modules DD 1200 S 33 K2 Datenblatt datasheet Transienter Warmewiderstand Transient thermal impedance Z thJC = f (t) 0,1 Zth:Diode ZthJC [K / W] 0,01 0,001 0,0001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] : Diode i [sec] : Diode 1 2 3 4 3,11 8,49 2,52 2,88 0,0068 0,0642 0,3209 2,0212 5 (6) Datenblatt DD 1200 S 33 K2 04.10.99 Technische Information / Technical Information IGBT-Module IGBT-Modules DD 1200 S 33 K2 Datenblatt datasheet Gehausemae / Schaltbild Package outline / Circuit diagram 0 VFUHZLQJGHSWK PD[ & & . . VFUHZLQJGHSWK PD[ ( ( $ $ '' & & & * & & ( ( ( )' ( ( & & ( ( & GHHS ( & * * GHHS 0 ( H[WHUQDOFRQQHFWLRQ WREHGRQH IH4 )= 6 (6) Datenblatt DD 1200 S 33 K2 04.10.99 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". 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