PAGE . 1
December 17,2010-REV.00
BC846AW ~ BC850CW
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE 30/45/65 Volts 150 mWatts
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0001 ounces, 0.005 grams
CURRENT
ABSOLUTE RATINGS
PARAMETER Symbol Value Units
Collector - Emitter Voltage
BC846W
BC847W, BC850W
BC848W, BC849W
V
CEO
65
45
30
V
Collector - Base Voltage
BC846W
BC847W, BC850W
BC848W, BC849W
V
CBO
80
50
30
V
Emitter - Base Voltage
BC846W
BC847W, BC850W
BC848W, BC849W
V
EBO
6.0
6.0
5.0
V
Collector Current - Continuous I
C
100 mA
THERMAL CHARACTERISTICS
PARAMETER Symbol Value Units
Max Power Dissipation (Note 1) P
TOT
150 mW
Thermal Resistance R
θJA
R
θJC
400
100
O
C/W
Junction Temperature T
J
-55 to 150
O
C
Storage Temperature T
STG
-55 to 150
O
C
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
Device Marking:
BC846AW=46A BC847AW=47A BC848AW=48A
BC846BW=46B BC847BW=47B BC848BW=48B BC849BW=49B BC850BW=50B
BC847CW=47C BC848CW=48C BC849CW=49C BC850CW=50C
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current IC = 100mA
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
SOT-323
Unit inch(mm)：
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.004(0.10)MAX.
0.004(0.10)MIN.
0.087(2.20)
0.078(2.00)
0.006(0.15)
0.002(0.05)
0.016(0.40)
0.008(0.20)
0.044(1.10)
0.035(0.90)
PAGE . 2
December 17,2010-REV.00
ELECTRICAL CHARACTERISTICS
PARAMETER Symbol Test Condition MIN. TYP. MAX. Units
Collector - Emitter Breakdown Voltage
BC846AW,BW
BC847AW/BW/CW,BC850BW/CW
BC848AW/BW/CW,BC849BW/CW
V
(BR)
CEO IC=10mA, IB=0
65
45
30
--V
Collector - Base Breakdown Voltage
BC846AW,BW
BC847AW/BW/CW,BC850BW/CW
BC848AW/BW/CW,BC849BW/CW
V
(BR)
CBO IC=10μA, IE=0
80
50
30
--V
Emitter - Base Breakdown Voltage
BC846AW,BW
BC847AW/BW/CW,BC850BW/CW
BC848AW/BW/CW,BC849BW/CW
V
(BR)
EBO IE=10μA, IC=0
6.0
6.0
5.0
--V
Emitter-Base Cutoff Current I
EBO
VEB=5 - - 100 nA
Collector-Base Cutoff Current I
CBO
VCB=30V, IE=0
VCB=30V, IE=0,TJ=150OC--
15
5.0
nA
μA
DC Current Gain BC846~BC848 Suffix "AW"
BC846~BC850 Suffix "BW"
BC847~BC850 Suffix "CW"
hFE IC =1 0 μA, VCE=5V -
90
150
270
--
DC Current Gain BC846~BC848 Suffix "AW"
BC846~BC850 Suffix "BW"
BC847~BC850 Suffix "CW"
hFE IC=2.0mA, VCE=5V
110
200
420
180
290
520
220
450
800
-
Collector - Emitter Saturation Voltage V
CE(SAT)
IC =1 0mA, IB =0 .5 mA
IC=100mA, IB=5.0mA --
0.25
0.6 V
Base - Emitter Saturation Voltage V
CE(SAT)
IC =1 0mA, IB =0 .5 mA
IC=100mA, IB=5.0mA -0.7
0.9 -V
Base - Emitter Voltage V
CE(SAT)
IC=2mA, VCE=5.0V
IC=10mA, VCE=5.0V
0.58
-
0.660
-
0.70
0.77 V
Collector - Base Capacitance C
CBO
VCB=10V, IE=0, f=1MH - - 4.5 pF
BC846AW ~ BC850CW
PAGE . 3
December 17,2010-REV.00
ELECTRICAL CHARACTERISTICS CURVE (BC846AW,BC847AW,BC848AW)
0
1
10
100
25 50 75 100 125 150
Junction Temperature, T
J
(
O
C)
I
CB0
, Collector Current (nA
)
V
CB
=30V
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100 1000
Collector Current, I
C
(mA)
V
BE(ON)
, (mV)
T
J
= 25 °C
T
J
= 150 °C
T
J
= 100 °C
V
CE
=5V
10
100
1000
0.01 0.1 1 10 100 1000
Collector Current, IC (mA)
V
CE(sat)
, (mV)
TJ = 25 °C
TJ = 150 °C
TJ = 100 °C
IC/IB=20
Fig. 3. Typical V
BE(ON)
vs. Collector Current
Fig. 1. Typical I
CB0
vs. Junction Temperatu re Fig. 2. Typical h
FE
vs. Collector Current
Fig. 4. Typical V
CE(SAT)
vs. Collector Curr en t
Fig. 5. Typical V
BE(SAT)
vs. Collector Current
0
50
100
150
200
250
300
0.01 0.1 1 10 100 1000
Collector Current, I
C
(mA)
hFE
T
J
=25 C
T
J
=100° C
T
J
=150° C
V
CE
=5V
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100
Collector Current, IC (mA)
V
BE(sat)
, (mV)
TJ = 25 °C
TJ = 150 °C
TJ = 100 °C
IC/IB=20
Fig. 6. Typical Capacitances vs. Reverse Voltage
1
10
0.1 1 10 100
Reverse Vol ta ge (V)
Capacitance, C (pF
)
T
J
= 25 °C
C
ib (EB)
C
ob (CB)
BC846AW ~ BC850CW
PAGE . 4
December 17,2010-REV.00
ELECTRICAL CHARACTERISTICS CURVE (BC846BW,BAC847BW,BC848BW,BC849BW,BC850BW)
0
1
10
100
25 50 75 100 125 150
Junction Temperature, T
J
(
O
C)
I
CB0
, Collector Current (nA
)
V
CB
=30V
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100 1000
Collector Current, I
C
(mA)
V
BE(ON)
, (mV)
T
J
= 25 °C
T
J
= 150 °C
T
J
= 100 °C
V
CE
=5V
0
50
100
150
200
250
300
350
400
450
500
0.01 0.1 1 10 100 1000
Collector Current, IC (mA)
hFE
T
J
=25 °C
T
J
=100° C
T
J
=150° C V
CE
=5V
10
100
1000
0.01 0.1 1 10 100 1000
Collector Current, I
C
(mA)
V
CE(sat)
, (mV)
T
J
= 25 °C
T
J = 150 °C
TJ = 100 °C
IC/IB=20
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100
Collector Current, I
C
(mA)
VBE(sat)
, (mV)
T
J
= 25 °C
T
J
= 150 °C
T
J
= 100 °C
I
C
/I
B
=20
1
10
0.1110100
Reverse Voltage (V)
Capacitance, C (pF
)
T
J
= 25 °C
C
ib (EB)
C
ob (CB)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
Fig. 1. Typical I
CB0
vs. Junction Temperatu re Fig. 2. Typical h
FE
vs. Collector Current
Fig. 4. Typical V
CE(SAT)
vs. Collector Curr en t
Fig. 5. Typical V
BE(SAT)
vs. Collector Current Fig. 6. Typical Capac itances vs. Reverse Voltage
BC846AW ~ BC850CW
PAGE . 5
December 17,2010-REV.00
ELECTRICAL CHARACTERISTICS CURVE (BAC847CW,BC848CW,BC849CW,BC850CW)
0
1
10
100
25 50 75 100 125 150
Junction Temperature, T
J
(
O
C)
I
CB0
, Collector Current (nA
)
V
CB
=30V
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100 1000
Collector Current, IC, (mA)
hFE
T
J
=25 C
T
J
=100° C
T
J
=150° C
V
CE
=5V
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100 1000
Collector Current, I
C
(mA)
V
BE(ON)
, (mV)
T
J
= 25 °C
T
J
= 150 °C
T
J
= 100 °C
V
CE
=5V
Fig. 1. Typical I
CB0
vs. Junction Temperature
10
100
1000
0.01 0.1 1 10 100 1000
Collector Current, I
C
(mA)
V
CE(sat)
, (mV)
T
J
= 25 °C
T
J
= 150 °C
T
J
= 100 °C
I
C
/I
B
=20
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100
Collector Current, IC (mA)
V
BE(sat)
, (mV)
T
J
= 25 °
C
TJ = 150 °C
TJ = 100 °C
IC/IB=20
1
10
0.1 1 10 100
Reverse Voltage (V)
Capacitance, C (pF
T
J
= 25 °C
C
ib (EB)
C
ob (CB)
Fig. 3. Typical V BE(ON) vs. Collector Current
Fig. 2. Typical hFE vs. Collector Current
Fig. 4. Typical VCE(SAT) vs. Collector Current
Fig. 5. Typical VBE(SAT) vs. Collector Curren t Fig. 6. Typical Capacitances vs. Reverse Voltage
BC846AW ~ BC850CW
PAGE . 6
December 17,2010-REV.00
MOUNTING PAD LAYOUT
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMATION
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its produ cts for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
BC846AW ~ BC850CW
SOT-323
0.026
(0.66)
0.073
(1.85)
0.034
(0.86)
0.026
(0.65)
0.026
(0.65)
Unit inch(mm)：
PAGE . 7
Part No_packing code_Version
For example :
RB500V-40_R2_
Serial number
Part No. Version code means HF
Packing size code means 13"
Packing type means T/R
Packing
type 1st Code Packing size
code 2nd Code HF or RoHS 1st Code 2nd~5th Code
T/B AN/A 0HF 0 serial number
T/R R7" 1RoHS 1 serial number
B/P B13" 2
T/P T26mm X
TRR S52mm Y
TRL LPBCU U
FORMING FPBCD D
Packing Code XX Version Code XXXXX
0000
BC846AW ~ BC850CW
December 17,2010-REV.00