International Rectifier HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching @ Ease of Paralleling e Simple Drive Requirements PD-9.568A IRC640 D Vogs = 200V Kelvin Ly Source Rpston) = 0.182 H Current oS Sense | b= 18A on-resistance and cost-effectiveness. The HEXSense device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision of a kelvin source connection effectively etiminates problems of common source inductance when the HEXSense is used as a fast, high-current switch in non current- sensing applications. Absolute Maximum Ratings TO-220 HexSense ) __ Parameter Max. Units Ip @ Tc = 25C Continuous Drain Current, Vas @ 10 V 18 lp @ Tc = 100C | Continuous Drain Current, Vas @ 10 V 11 A lom Pulsed Drain Current 72 Pp @ Tc = 25C | Power Dissipation 125 Ww Linear Derating Factor 1.0 WPC Vas Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 4380 mJ lar Avalanche Current 18 A Ear Repetitive Avalanche Energy 13 mJ dv/dt Peak Diode Recovery dv/dt @ 5.0 Vins Ty Operating Junction and -55 to +150 |Tsta____| Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case} Mounting Torque, 6-32 or M3 screw 10 Ibfein (1.1 Nem) Thermal Resistance So Pattameter Min, Typ. Max. Units Rac Junction-to-Case = = 1.0 Recs Case-to-Sink, Flat, Greased Surface _ 0.50 C/W Raa | Junction-to-Ambient | _ 62 33 _IRC640 Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vipryoss Drain-to-Source Breakdown Voltage 200 _ _ Vs | Ves=0V, Ip= 250nA | AV prypss/ATy| Breakdown Voltage Temp. Coefficient | 029) | VPC | Reference to 25C, lp= tmA Ros(on} Static Drain-to-Source On-Resistance - | 018} Q | Ves=10V, IbD=11A @ Vastthy Gate Threshold Voltage 2.0 _ 4.0 V__ | Vpos=Ves, Ip= 250A Gis Forward Transconductance 6.5 S | Vos=50V, Ip=11A loss Drain-to-Source Leakage Current yA Vos=200V, Vas-0V _ _ 250 Vos=160V, Vas=0V, Ty=125C lass Gate-to-Source Forward Leakage _ _ 100 nA Ves=20V Gate-to-Source Reverse Leakage _ | -100 Ves=-20V Qg Total Gate Charge _ 70 Ip=18A | Qgs Gate-to-Source Charge = _ 13 | nC | Vps=160V Qga Gate-to-Drain (Miller) Charge _ _ 39 Vas=10V ta(on) Turn-On Delay Time _ 14 _- Vop=100V tr Rise Time _ 51 _ ns Ip=18A ta(ott) Turn-Off Delay Time _ 45 _ Re=9.12 tr Fall Time 36 _ Rp=3.2Q Lo Internal Drain Inductance _ 4.5 - | mn oes ) 2 nH | from package See Ls Internal Source Inductance |75) and center of Slient die contact Ss Same Ciss Input Capacitance | 1300; Ves=0V Coss Output Capacitance | 40; pF | Vos= 25V Crss Reverse Transfer Capacitance _ 130 | f=1.0MHz r Current Sensing Ratio 2600} | 2880] | Ip=18A, Vas=10V Coss Output Capacitance of Sensing Cells _ 9.0 PF | Vas=0V, Vos= 25V, f=1.0MHz Source-Drain Ratings and Characteristics 7 Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 18 MOSFET symbol D (Body Diode) a__ | Showing the Ketin Io Pulsed Source Current _ |_| integral reverse Sliven (Body Diode) p-n junction diode. S Sense Vsp Diode Forward Voltage _ _ 2.0 Vj Ty=25C, Is=18A, Vas=0V tre Reverse Recovery Time | 300 | 610 | ns Ty=25C, Ip=18A Qn Reverse Recovery Charge _ 3.4 | 7.4 pC | di/dt=i00A/us @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Lg+Lp) Notes: @ Repetitive rating; pulse width limited by Isps18A, di/dts150A/us, Voo<VieR)pss, max. junction temperature Tys150C Vpp=50V, starting Ty=25C, L=2.0mH Pulse width < 300 1s; duty cycle <2%. Re=25Q, las=18A : 34IRC640 Ip, Drain Current (Amps) lp, Drain Current (Amps) g E =< e 5 3 g a 2 av 20us PULSE 20us PULSE WIDTH To = 25C To = 150C 107 Vps, Drain-to-Source Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, To=25C To=150C 2 sg 2 2.5 D tot aa B20 88 3 15 BE 109 2 3 1.0 a Z 0.5 6 Vog = 50V a sot 20us PULSE WIDTH ce Veg = 10V 10 -40 - 80 100 120 140 160 Vas, Gate-to-Source Voltage (volts) Ty, Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 35IRC640 3000 20 Cgg + fgg. Cas Cog + a a ity a S a ia te o 1000 Capacitance (pF) Vas, Gate-to-Source Voltage (volts) A FOR TEST CIACUIT SEE FIGURE 13 104 15 30 75 Vos, Drain-to-Source Voltage (volts) Qe, Tota! Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 103 CS 5 Qa E a. ~ QB 102 S 3 5 10! = 3 5 s 5 10 & oO. g 2 D 4G ? a a 1 & = 100 5 a T ~ Vee = OV 2] Ty=450C gs O.4 $ 0. : : : 1. 1.50 0.1 1 40 1 1 104 Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 36Ip, Drain Current (Amps) IRC640 *Vop Pulse Width < ths Duty Factor s 0.1% 10% 25 50 76 100 125 150 Vas To, Case Temperature (C) tdjon) tayo) Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10 ~ 3 3 No; an 8 oO oc @ Eo. - G rd rat 1 e eet tel NOTES: 4. DUTY FACTOR, Dst,/to -2 2. PEAK T. x +T, 10 10-5 1074 40-8 1072 0.4 4 10 t,, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Therma! Impedance, Junction-to-Case 37IRC640 Vary tp to obtain Vps > required las 0.012 Vps lag Ke Fig 12b. Unclamped Inductive Waveforms 10V Va Charge ~> Fig 13a. Basic Gate Charge Waveform Io TOP BOA 441A BOTTOM 148A Eas, Single Pulse Energy (mJ) Dp = 50V 25 50 75 100 125 150 Starting Ty, Junction Temperature(C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator I | | | SOKQ i Ee j : 7 t ama FPL ig * Ib Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 38 river Gate Drive 5. BM. * Period @ jour gp Waveform Reverse fA Recovery Current @ |D.UT. Vg Wavelorm Body Diode Forward Current / di/dt Diode Recover dvidt \ Re-Applied Vohage Body Diode Forward Drop {Inductor Curent IRC640 CIRCUIT LAYOUT CONSIDERATIONS + LOW STRAY INDUCTANCE GROUND PLANE LOW LEAKAGE INDUCTANCE CURRENT TRANSFORMER DRIVER dwt CONTROLLED BY Rg DRIVER SAME DEVICE GROUP AS DUT * Isp CONTROLLED BY DUTY FACTOR "D Fig 14. Peak Diode Recovery dv/dt Test Circuit Sense Ratio (r) Ty, Junction Temperature (C) Fig 15. Typical HEXSense Ratio Vs. Junction Temperature Sense Ratio (r) 3000 2300 2800 2700 2600 2500 2400 Ip, Drain Current (Amps) Fig 16. Typical HEXSense Ratio Vs. Drain Current 39IRC640 3000 M, 2900 s 2800 2 rc cc ao 2 oD ) 2600 2500 M, + i M1, M2 = HIGH SPEED DIGITAL VOLTMETERS Vas, Gate-to-Source Voltage (volts) Fig 17. Typical HEXSense Ratio Vs. Fig 18. HEXSense Ratio Test Circuit Gate Voltage Capacitance Meter High Terminal 620K YVv J p45 AAA V nt 620K Capacitance Meter ow Terminal Fig 19. HEXSense Sensing Cell Output Capacitance Test Circuit Appendix B: Package Outline Mechanical Drawing See page 1510 Appendix C: Part Marking Information See page 1517 International Rectifier 40