SOT-23 Plastic-Encapsulate Transistors >, 2 EMITTER SS8550LT1 TRANSISTOR (PNP) 3.COLLECTOR FEATURES tower dissipation Pom: 0.625 W (Tamb=25C ) Soltector currnt fom: -1.5A Have-voitage ViaRjcBo:-40V Operating and storage junction temperature range Tu, Tstg :--55C to+ 150C UNIT: mm ELECTRICAL CHARACTERISTICS (Tamp=25C unless otherwise specified) Collector-base breakdown voltage V(BR)CBO Ic=-100n A, lE=0 -40 Vv Collector-emitter breakdown voltage V(BR)CEO ic=-0.1mA, is=0 -25 V Emitter-base breakdown voltage V(BRJEBO le=-100n A, Ic=0 -6 Vv Collector cut-off current IcBo Vc8=-40V ,le=0 -0.1 LA Collector cut-off current IcEO Vce=-20V, IB=0 -0.4 LA Emitter cut-off current lEBO Ves=-5V,ic=O0mA -0.1 bhA pc taai hFE(1) Vce=-1V,1c=-100mA 120 350 current gain hFE(2) Vce=-1V, Ic=-800MA 40 Collector-emitter saturation voltage VcEsat Ic=-800mA, IB=-80MA 0.5) Vv Base-emitter saturation voltage VBEsat Ic=-800mA ,le=-80mA -4.2 Vv Base-emitter voltage VBEF le=-1.5A 161 =V Transition frequency fT Vce=-10V,Ic=-50mA,f=30MHz | 100 MHz CLASSIFICATION OF hFE(1) 120-200 200-350 DEVICE MARKING : SS8550LT1=Y2 174MCC: Typical Characteristics SS8550LT1 % 53 =z x 3 = 5 9 4 w x all _ oO oO o 8 < me a 04 0.8 42 AB -2.0 Vee], COLLECTOR-EMITTER VOLTAGE Io[mA}, COLLECTOR CURRENT Static Characteristic DC current Gain 8 x 3 5 > yy p 3 : % &. s 4 3 8 3 5 a > 0.1 4 -10 -100 -4000 0.0 0.2 04 08 0.8 1.0 1.2 {gf MA}, COLLECTOR CURRENT Vee{V]. BASE-EMITTER VOLTAGE Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Saturation Voltage 2 fe a z= 3 a : : oS < $ 3 5 g x e = o 1 10 -100 +1000 = -1 6 00 . 000 VealV], COLLECTOR-BASE VOLTAGE | iclmA], COLLECTOR CURRENT Collector Output Capacitance Current Gain Bandwidth Product 175