MPSA14 MMBTA14 PZTA14 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.2 A -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Max Units MPSA14 625 5.0 83.3 *MMBTA14 350 2.8 **PZTA14 1,000 8.0 200 357 125 *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2 **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . mW mW/C C/W C/W MPSA14 / MMBTA14 / PZTA14 N Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage IC = 100 A, IB = 0 ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 100 nA IEBO Emitter-Cutoff Current VEB = 10 V, IC = 0 100 nA 1.5 V 2.0 V 30 V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA VBE(on) Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V 10,000 20,000 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 10 V, f = 100 MHz 125 MHz *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Typical Characteristics Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 250 1.6 = 1000 200 VCE = 5V 125 C 1.2 150 - 40 C 0.8 25 C 25C 100 - 40 C 0.4 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 CESAT FE 50 0 0.001 0 1 Base-Emitter Saturation Voltage vs Collector Current = 1000 1.6 - 40 C 25 C 1.2 125 C 0.8 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) Pr05 10 100 I C - COLLECTOR CURRENT (mA) 1000 Pr05 1000 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Pr05 2 125 C Base Emitter ON Voltage vs Collector Current 2 1.6 - 40 C 25 C 1.2 125 C 0.8 VCE = 5V 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) Pr05 1000 MPSA14 / MMBTA14 / PZTA14 NPN Darlington Transistor (continued) Typical Characteristics 100 VCB = 30V 10 1 0.1 0.01 25 50 75 100 TA- AMBIENT TEMPERATURE ( C) 125 62 61.5 61 60.5 60 59.5 0.1 1 10 100 Input and Output Capacitance Gain Bandwidth Product vs Collector Current 20 10 Cib 5 Cob 1 10 100 Vce- COLLECTOR VOLTAGE(V) 50 Vce = 5V 40 30 20 10 0 1 Pr05 10 Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (W) 1 SOT-223 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE ( oC) 20 50 IC- COLLECTOR CURRENT (mA) Pr05 0.75 1000 RESISTANCE (k ) Pr05 f = 1.0 MHz CAPACITANCE (pF) 62.5 Pr05 vs Reverse Voltage 2 0.1 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base f T - GAIN BANDWIDTH PRODUCT (MHz) ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature BVCER - BREAKDOWN VOLTAGE (V) (continued) 125 150 100 150 MPSA14 / MMBTA14 / PZTA14 NPN Darlington Transistor