QFET FQPF12N60CT 600V N-Channel MOSFET Features Description * * * * * * These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 12A, 600V, RDS(on) = 0.65 @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G TO-220F Potted GD S FQPF Series S Absolute Maximum Ratings Symbol Parameter FQPF12N60CT Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25C) 12* A IDM Drain Current - Pulsed - Continuous (TC = 100C) (Note 1) 7.4* A 48* A 30 V 870 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 5.1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25C) 51 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25C 0.41 W/C -55 to +150 C 300 C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQPF12N60CT Units RJC Thermal Resistance, Junction-to-Case 2.43 C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 C/W (c)2006 Fairchild Semiconductor Corporation FQPF12N60CT Rev. A 1 www.fairchildsemi.com FQPF12N60CT 600V N-Channel MOSFET September 2006 (R) Device Marking Device Package Reel Size Tape Width Quantity FQPF12N60CT FQPF12N60CT TO-220F -- -- 50 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS/ TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.5 IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 A VDS = 480 V, TC = 125C -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 A 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6 A gFS Forward Transconductance VDS = 40 V, ID =6 A (Note 4) -- 0.53 0.65 -- 13 -- S -- 1760 2290 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 182 235 pF -- 21 28 pF -- 30 70 ns -- 85 180 ns -- 140 290 ns -- 90 190 ns -- 48 63 nC -- 8.5 -- nC -- 21 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 300 V, ID = 12A, RG = 25 (Note 4, 5) VDS = 480 V, ID = 12A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12 A -- -- 1.4 V trr Reverse Recovery Time -- 420 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 12 A, dIF / dt = 100 A/s -- 4.9 -- C (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 12A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature FQPF12N60CT Rev. A 2 www.fairchildsemi.com FQPF12N60CT 600V N-Channel MOSFET Package Marking and Ordering Information FQPF12N60CT 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 1 10 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : o 150 C o -55 C o 25 C 0 10 Notes : 1. 250s Pulse Test 2. TC = 25 0 10 Notes : 1. VDS = 40V 2. 250s Pulse Test -1 10 0 1 10 10 2 4 VDS, Drain-Source Voltage [V] 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.5 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage VGS = 10V 1.0 VGS = 20V 0.5 6 VGS, Gate-Source Voltage [V] 1 10 0 10 150 Notes : 1. VGS = 0V 2. 250s Pulse Test 25 Note : TJ = 25 -1 0 5 10 15 20 25 30 10 35 0.2 0.4 0.6 ID, Drain Current [A] Figure 5. Capacitance Characteristics 3500 VGS, Gate-Source Voltage [V] Capacitance [pF] Coss 1500 1000 1.4 VDS = 120V Ciss 2000 1.2 12 10 2500 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 0.8 VSD, Source-Drain voltage [V] Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 500 VDS = 300V VDS = 480V 8 6 4 2 Note : ID = 12A 0 -1 10 0 0 10 1 10 FQPF12N60CT Rev. A 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 6.0 A 0.5 0.0 -100 200 -50 0 12 ID, Drain Current [A] ID, Drain Current [A] 1 1 ms 10 ms 100 ms DC 0 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 2 10 10 8 6 4 2 0 25 -2 10 200 14 10 s 100 s 10 150 Figure 10. Maximum Drain Current vs. Case Temperature Operation in This Area is Limited by R DS(on) 2 100 TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 10 50 o o TJ, Junction Temperature [ C] 3 10 10 50 75 100 125 150 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Z JC(t), Thermal Response Figure 11. Transient Thermal Response Curve 10 D = 0 .5 0 0 .2 N o te s : 1 . Z J C (t) = 2 .4 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 10 0 .0 5 -1 0 .0 2 PDM 0 .0 1 t1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQPF12N60CT Rev. A 4 www.fairchildsemi.com FQPF12N60CT 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FQPF12N60CT 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQPF12N60CT Rev. A 5 www.fairchildsemi.com FQPF12N60CT 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQPF12N60CT Rev. A 6 www.fairchildsemi.com FQPF12N60CT 600V N-Channel MOSFET Package Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : 4000V Dimensions in Millimeters FQPF12N60CT Rev. 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