March 2009
FCA35N60 N-Channel MOSFET
©2009 Fairchild Semiconductor Corporation
FCA35N60 Rev. A
www.fairchildsemi.com1
SuperFETTM
FCA35N60
600V N-Channel MOSFET
Features
• 650V @ TJ = 150°C
•Typ.R
DS(on) = 0.079Ω
• Ultra low gate charge ( Typ. Qg = 139nC )
• Low effective output capacitance ( Typ. Coss.eff = 340pF )
• 100% avalanche tested
Description
SuperFETTM is Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge bal-
ance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
GSD
TO-3PN
D
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Thermal Characteristics
Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 600 V
VGSS Gate-Soure voltage ±30 V
IDD r a i n C u r r e n t -Continuous (TC = 25oC) 35 A
-Continuous (TC = 100oC) 22.2
IDM D r a i n C u r r e n t - P u l s e d (Note 1) 105 A
EAS Single Pulsed Avalanche Energy (Note 2) 1455 mJ
IAR Avalanche Current (Note 1) 35 A
EAR Repetitive Avalanche Energy (Note 1) 31.25 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
PDPower Dissipation (TC = 25oC) 312.5 W
- Derate above 25oC2.5W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 oC
Symbol Parameter Typ. Max. Units
RθJC Thermal Resistance, Junction to Case - 0.4
oC/WRθCS Thermal Resistance, Case-to-Heat Sink 0.24 -
RθJA Thermal Resistance, Junction to Ambient - 42
*Drain current limited by maximum junction temperature
FCA35N60 N-Channel MOSFET
FCA35N60 Rev. A
www.fairchildsemi.com
2
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FCA35N60 FCA35N60 TO-3PN - - 30
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 600 - - V
ID = 250µA, VGS = 0V, TJ = 150oC- 650 - V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250µA, Referenced to 25oC-0.6-V/
oC
BVDS
Drain-Source Avalanche Breakdown
Voltage VGS = 0V, ID = 16A - 700 - V
IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 1 µA
VDS = 480V, TC = 125oC--10
IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 17.5A - 0.079 0.098 Ω
gFS Forward Transconductance VDS = 40V, ID = 17.5A - 28.8 - S
Ciss Input Capacitance VDS = 25V, VGS = 0V
f = 1MHz
- 4990 6640 pF
Coss Output Capacitance - 2380 3170 pF
Crss Reverse Transfer Capacitance - 140 - pF
Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz - 113 - pF
Coss eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 340 - pF
QgTotal Gate Charge at 10V
VDS = 480V, ID = 35A
VGS = 10V
(Note 4)
- 139 181 nC
Qgs Gate to Source Gate Charge - 31 - nC
Qgd Gate to Drain “Miller” Charge - 69 - nC
ESR Equivalent Series Resistance (G-S) Drain Open, F= 1MHZ -1.4-Ω
td(on) Turn-On Delay Time
VDD = 300V, ID = 35A
RG = 4.7Ω
(Note 4)
-3478ns
trTurn-On Rise Time - 120 250 ns
td(off) Turn-Off Delay Time - 105 220 ns
tfTurn-Off Fall Time - 73 155 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 35 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 105 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 35A - - 1.4 V
trr Reverse Recovery Time VGS = 0V, ISD = 35A
dIF/dt = 100A/µs
- 614 - ns
Qrr Reverse Recovery Charge - 16.3 - µC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: IAS = 17.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 35A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
FCA35N60 N-Channel MOSFET
FCA35N60 Rev. A
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
456789
1
10
100
200
-55oC
150oC
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
25oC
ID, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.1 1 10 20
0.3
1
10
100
200
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
ID, Drain Current[A]
VDS, Drain-Source Voltage[V]
0 255075100125
0.04
0.08
0.12
0.16
0.20
0.24
*Note: TC = 25oC
VGS = 20V
VGS = 10V
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.8 1.2 1.6
1
10
100
500
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
150oC
IS, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
04080120160
0
2
4
6
8
10
*Note: ID = 35A
VDS = 100V
VDS = 250V
VDS = 400V
VGS, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
0.1 1 10 100 600
10
100
1000
10000
50000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
FCA35N60 N-Channel MOSFET
FCA35N60 Rev. A
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.85
0.90
0.95
1.00
1.05
1.10
1.15
*Notes:
1. VGS = 0V
2. ID = 250µA
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. VGS = 10V
2. ID = 17.5A
RDS(on), [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
25 50 75 100 125 150
0
10
20
30
40
ID, Drain Current [A]
TC, Case Temperature [oC]
1 10 100 1000
0.01
0.1
1
10
100
300
10µs
100µs
1ms
10ms
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
DC
10-5 10-4 10-3 10-2 10-1 110
0.001
0.01
0.1
0.6
0.01
0.1
0.2
0.05
0.02
*Notes:
1. ZθJC(t) = 0.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.5
Single pulse
Thermal Response [ZθJC]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
FCA35N60 N-Channel MOSFET
FCA35N60 Rev. A
www.fairchildsemi.com
5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCA35N60 N-Channel MOSFET
FCA35N60 Rev. A
www.fairchildsemi.com
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCA35N60 N-Channel MOSFET
FCA35N60 Rev. A
www.fairchildsemi.com
7
Mechanical Dimensions
TO-3PN
FCA35N60 N-Channel MOSFET
FCA35N60 Rev. A
www.fairchildsemi.com8
Rev. I38
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