January 2001
Si4920DY
Dual N-Channel, Logic Level, PowerTrench MOSFET
General Description Features
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter Si4920DY Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
IDDrain Current - Continuous (Note 1a) 6 A
- Pulsed 20
PDPower Dissipation for Single Operation (Note 1a) 2 W
(Note 1b) 1.6
(Note 1c) 0.9
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
Si4920DY Rev.A
6 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V
RDS(ON) = 0.035 Ω @ VGS = 4.5 V.
Fast switching speed.
Low gate charge (typical 9 nC).
High performance trench technology for extremely low
RDS(ON).
High power and current handling capability.
SOT-23 SuperSOTTM-8 SOIC-16SO-8 SOT-223SuperSOTTM-6
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
pin11
5
7
8
2
3
4
6
© 2001 Fairchild Semiconductor International
4920
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V
∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 23 mV / oC
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
TJ = 55°C 10 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.5 3 V
∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC -4 mV / oC
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, I D = 6 A 0.023 0.028 Ω
TJ =125°C 0.036 0.044
VGS = 4.5 V, I D = 5 A 0.029 0.035
ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 20 A
gFS Forward Transconductance VDS = 15 V, I D= 6 A 18 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 15 V, VGS = 0 V,
f = 1.0 MHz 830 pF
Coss Output Capacitance 185 pF
Crss Reverse Transfer Capacitance 80 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)Turn - On Delay Time VDS= 15 V, I D = 1 A 6 12 ns
trTurn - On Rise Time VGS = 10 V , RGEN = 6 Ω 10 18 ns
tD(off) Turn - Off Delay Time 18 29 ns
tfTurn - Off Fall Time 5 12 ns
QgTotal Gate Charge VDS = 15 V, I D = 7.5 A, 9 13 nC
Qgs Gate-Source Charge VGS = 5 V 2.8 nC
Qgd Gate-Drain Charge 3.1 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current 1.3 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.73 1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Si4920DY Rev.A
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
Si4920DYA Rev.A
0 1 2 3 4
0
8
16
24
32
40
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
DS
D
3.5V
3.0V
V =10V
GS
4.0V
5.5V
2.5V
4.5V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10VGS
I = 6A
D
Figure 3. On-Resistance Variation with
Temperature.
T = -55°C
J
1 2 3 4 5
0
5
10
15
20
25
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V =5.0V
DS
GS
D
125°C
25°C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0 6 12 18 24 30
0
1
2
3
4
5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
V = 2.5V
GS
R , NORMALIZED
DS(ON)
10V
3.5 V
3.0 V
4.5 V
0 0.2 0.4 0.6 0.8 1 1.2 1.4
0.001
0.01
0.1
1
20
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
25°C
-55°C
V = 0V
GS
SD
S
T = 125°C
J
0 2 4 6 8 10
0
0.03
0.06
0.09
0.12
0.15
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
25°C
I = 3A
D
T = 125°C
A
Si4920DY Rev.A
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R =135° C/W
θJA
θJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t
1 t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
0.1 0.2 0.5 1 2 5 10 30
50
100
200
500
1500
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
0.1 0.5 1 2 5 10 30 50
0.01
0.05
0.5
2
10
50
100
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
A
DC
DS
1s
100ms
10ms
1ms
10s
V =10V
SINGLE PULSE
R = 135°C/W
T = 25°C
θJA
GS
A
100us
0.01 0.1 0.5 10 50100 300
0
5
10
15
20
25
30
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =135 °C/W
T = 25°C
θJAA
0 3 6 9 12 15 18
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 6A
D10V
15V
V = 5V
DS
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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