2N7002KW
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-323
Features
• Case: SOT-323, Molded Plastic
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking: 72K
Maximum Ratings
• Operating Temperature: -55°Cto+150°C
• Storage Temperature: -55°Cto+150°C
• Maximum Thermal Resistance; 625K/W Junction To Ambient
Parameter Symbol Value Unit
Drain-Source-Voltage VDSS 60 V
Drain Current ID340 mA
Total Power Dissipation
PD200 mW
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
C .083 .096 2.10 2.45
D .026 Nominal 0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
G .000 .004 .000 .100
H .035 .039 .90 1.00
J .004 .010 .100 .250
K .006 .016 .15 .40
A
C
B
D
E
F
GH
J
1.90
0
.7
0
0.90
0
.
65
0.65
DIMENSIONS
S
G
D
K
omponents
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MCC
Revision: C 2013/09/24
TM
Micro Commercial Components
Suggested Solder
Pad Layout
• High density cell design for Low RDS(ON)
• Voltage controlled small signal switch
• Rugged and reliable
• High saturation current capability
• Low Input/Output Leakage
Mechanical Data
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• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
Equivalent circuit
Halogen free available upon request by adding suffix "-HF"
•
2N7002KW
MCC
Revision: C 2013/09/24
TM
Micro Commercial Components
www.mccsemi.com
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MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
Static Characteristics
Drain-Source Breakdown Voltage VDS VGS = 0V, ID =250µA 60
V
Gate Threshold Voltage* VGS(th) VDS =VGS, ID =1mA 1
V
Zero Gate Voltage Drain Current IDSS VDS =48V,VGS = 0V
1 µA
IGSS VGS =±20V, VDS = 0V
±10 µA
Gate –Source leakage current
VGS = 4.5V, ID =200mA
5.3 Ω
Drain-Source On-Resistance* RDS(on)
VGS =10V,ID =500mA 5 Ω
Diode Forward Voltage VSD VGS=0V, IS=300mA
1.5 V
Recovered charge Qr VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µs
30 nC
Dynamic Characteristics**
Input Capacitance Ciss
40 pF
Output Capacitance Coss
30 pF
Reverse Transfer Capacitance Crss
VDS =10V,VGS =0V,f =1MHz
10 pF
Switching Characteristics**
Turn-On Delay Time td(on)
10 ns
Turn-Off Delay Time td(off)
VGS=10V,VDD=50V,RG=50Ω,
RGS=50Ω, RL=250Ω
15 ns
Reverse recovery Time trr VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µs
30 ns
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage BVGSO Igs=±1mA (Open Drain) ±21.5 ±30 V
Notes:
*Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.
**These parameters have no way to verify.
MCC
Revision: C 2013/09/24
TM
Micro Commercial Components
www.mccsemi.com
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Device Packing
Part Number-TP Tape&Reel: 3Kpcs/Reel
Ordering Information :
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approval of Micro Commercial Components Corporation.
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Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
