BLM8G0710S-30PBG - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state

of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general

purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz.

Available in gull wing or straight lead outline.

1.2 Features and benefits

Designed for broadband operation (frequency 700 MHz to 1000 MHz)

High section-to-section isolation enabling multiple combinations

Integrated temperature compensated bias

Biasing of individual stages is externally accessible

Integrated ESD protection

Excellent thermal stability

High power gain

On-chip matching for ease of use

For RoHS compliance see the product details on the Ampleon website

1.3 Applications

RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency

range. Possible circuit topologies are the following as also depicted in Section 8.1:

Dual section or single ended

Doherty

Quadrature combined

Push-pull

BLM8G0710S-30PB;

BLM8G0710S-30PBG

LDMOS 2-stage power MMIC

Rev. 5 — 28 September 2018 Product data sheet

Table 1. Performance

Typical RF performance at Tcase = 25 °C; IDq1 = 30 mA; IDq2 = 120 mA.

Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF; per section

unless otherwise specified in a class-AB production circuit.

Test signal f VDS PL(AV) GpηDACPR5M

(MHz) (V) (W) (dB) (%) (dBc)

single carrier W-CDMA 957.5 28 3 35 27 41.5

Product data sheet Rev. 5 — 28 September 2018 2 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

2. Pinning information

2.1 Pinning

2.2 Pin description

Transparent top view

The exposed backside of the package is the ground terminal of the device.

Fig 1. Pin configuration

amp00601

pin 1 index

RF_OUT_ VDS(A2)

RF_OUT_ VDS(B2)

VGS(A2)

VDS(A1)

VGS(A1)

RF_IN_A

n.c.

VDS(B1)

VGS(B2)

VGS(B1)

RF_IN_B

Table 2. Pin description

Symbol Pin Description

VDS(A1) 1 drain-source voltage of driver stage A1

VGS(A2) 2 gate-source voltage of final stage A2

VGS(A1) 3 gate-source voltage of driver stage A1

RF_IN_A 4 RF input section A

n.c. 5 not connected

n.c. 6 not connected

n.c. 7 not connected

n.c. 8 not connected

n.c. 9 not connected

n.c. 10 not connected

RF_IN_B 11 RF input section B

VGS(B1) 12 gate-source voltage of driver stage B1

VGS(B2) 13 gate-source voltage of final stage B2

VDS(B1) 14 drain-source voltage of driver stage B1

Product data sheet Rev. 5 — 28 September 2018 3 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

3. Ordering information

4. Block diagram

5. Limiting values

[1] Continuous use at maximum temperature will affect the reliability. For details refer to the online MTF

calculator.

RF_OUT_B/VDS(B2) 15 RF output section B / drain-source voltage of final stage B2

RF_OUT_A/VDS(A2) 16 RF output section A / drain-source voltage of final stage A2

GND flange RF ground

Table 2. Pin description …continued

Symbol Pin Description

Table 3. Ordering information

Type number Package

Name Description Version

BLM8G0710S-30PB - plastic, heatsink small outline package;

16 leads (flat)

SOT1211-3

BLM8G0710S-30PBG - plastic, heatsink small outline package; 16 leads SOT1212-3

Fig 2. Block diagram

aaa-009323

DS(A1)

DS(B1)

GS(A2)

RF_OUT_A / V

DS(A2)

RF_OUT_B / V

DS(B2)

GS(B1)

RF_IN_A

RF_IN_B

TEMPERATURE

COMPENSATED BIAS

GS(B2)

GS(A1)

TEMPERATURE

COMPENSATED BIAS

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage 0.5 +13 V

Tstg storage temperature 65 +150 C

Tjjunction temperature [1] - 225 C

Tcase case temperature - 150 C

Product data sheet Rev. 5 — 28 September 2018 4 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

6. Thermal characteristics

[1] When operated with a CW signal.

7. Characteristics

[1] In production circuit with 1.3 k gate feed resistor.

[2] In production circuit with 1.2 k gate feed resistor.

Table 5. Thermal characteristics

Measured for total device.

Symbol Parameter Conditions Value Unit

Rth(j-c) thermal resistance from

junction to case

final stage; Tcase = 90 C; PL = 2.52 W [1] 1.5 K/W

driver stage; Tcase = 90 C; PL = 2.52 W [1] 5.3 K/W

Table 6. DC characteristics

Tcase = 25 °C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Final stage

V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.241 mA 65 - - V

VGSq gate-source quiescent voltage VDS = 28 V; ID = 120 mA 1.5 2 2.7 V

VDS = 28 V; ID = 120 mA [1] 1.9 2.6 3.5 V

IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.4 A

IDSX drain cut-off current VGS = 5.65 V; VDS = 10 V - 4.4 - A

IGSS gate leakage current VGS = 1.0 V; VDS = 0 V - - 140 nA

Driver stage

V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.06 mA 65 - - V

VGSq gate-source quiescent voltage VDS = 28 V; ID = 30 mA 1.5 2.1 2.7 V

VDS = 28 V; ID = 30 mA [2] 1.9 2.6 3.5 V

IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.4 A

IDSX drain cut-off current VGS = 5.65 V; VDS = 10 V - 1.1 - A

IGSS gate leakage current VGS = 1.0 V; VDS = 0 V - - 140 nA

Table 7. RF Characteristics

Typical RF performance at Tcase = 25 °C; VDS = 28 V; IDq1 = 30 mA; IDq2 = 120 mA; PL(AV) = 3 W. Per section unless otherwise

specified, measured in an Ampleon wideband f = 700 MHz to 1000 MHz production circuit.

Symbol Parameter Conditions Min Typ Max Unit

Test signal: single carrier W-CDMA [1]

Gppower gain f = 730.5 MHz - 35.7 - dB

f = 957.5 MHz 33.5 35 36.5 dB

Ddrain efficiency f = 730.5 MHz - 24 - %

f = 957.5 MHz 23.5 27 - %

RLin input return loss f = 730.5 MHz - 20 - dB

f = 957.5 MHz - 16 10 dB

ACPR5M adjacent channel power ratio

(5 MHz)

f = 730.5 MHz - 39 - dBc

f = 957.5 MHz - 41.5 38.5 dBc

Product data sheet Rev. 5 — 28 September 2018 5 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

[1] 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF.

[2] f = 957.5 MHz.

8. Application information

PAROoutput peak-to-average ratio f = 730.5 MHz - 8 - dB

f = 957.5 MHz 7.3 8 - dB

IDq/T quiescent drain current variation with

temperature

T = 40 C to +85 C

final stage IDq; gate feed resistor = 1.3 k- 0.5 - %

driver stage IDq; gate feed resistor = 1.2 k- 0.5 - %

Test signal: CW [2]

s21 phase response difference between sections 10 - +10 deg

s212insertion power gain difference between sections 0.5 - +0.5 dB

Table 7. RF Characteristics …continued

Typical RF performance at Tcase = 25 °C; VDS = 28 V; IDq1 = 30 mA; IDq2 = 120 mA; PL(AV) = 3 W. Per section unless otherwise

specified, measured in an Ampleon wideband f = 700 MHz to 1000 MHz production circuit.

Symbol Parameter Conditions Min Typ Max Unit

Table 8. Typical performance

Test signal: 1-tone CW; RF performance at Tcase = 25 °C; VDS = 28 V; IDq1 = 60 mA (both sections); IDq2 = 240 mA (both

sections) unless otherwise specified, measured in an Ampleon wideband f = 700 MHz to 1000 MHz class AB application

circuit.

Symbol Parameter Conditions Min Typ Max Unit

PL(1dB) output power at 1 dB gain compression f = 800 MHz - 29.7 - W

Ddrain efficiency at PL(1dB); f = 800 MHz - 51.7 - %

Gppower gain PL(AV) = 8 W; f = 800 MHz - 35.8 - dB

Bvideo video bandwidth 2-tone CW; PL(AV) = 16 W; f = 881 MHz - 168 - MHz

Gflat gain flatness PL(AV) = 8 W - 0.5 - dB

G/T gain variation with temperature f = 800 MHz - 0.03 - dB/C

s122isolation between sections A and B;

PL(AV) = 8 W; f = 800 MHz

-26- dB

K Rollett stability factor T = 40 C; f = 0.1 GHz to 3 GHz - >1 -

Product data sheet Rev. 5 — 28 September 2018 6 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

Printed-Circuit Board (PCB): Rogers 4350; thickness = 0.508 mm.

Fig 3. Component layout for class-AB application circuit

BLM8G0710S-30PB

1.3 kΩ

2.7 pF

100 Ω

40 mm

10 μF

1.3 kΩ

10 μF

1.2 kΩ

10 μF

1.2 kΩ

10 μF

100 pF

10 μF

5.1 pF

5.1 pF 10 pF

10 μF

100 pF

amp00604

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Product data sheet Rev. 5 — 28 September 2018 7 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

Fig 4. Electrical schematic

RF in

VDS(A1)

VDS

28 V

100 Ω

1.2 kΩ

1.3 kΩ

aaa-016381

VGS

VDS

28 V

BLM8G0710S-30PB PathA

BLM8G0710S-30PB

Single ended class AB compact board

schematics 700-1000 MHz v1r0

BLM8G0710S-30PB PathB

VGS(A2)

VGS(A1)

4RF_IN_A

n.c.

RF_IN_B

VDS(B2)

VGS(B2)

VDS(B1)

Driver

clamped

RF FET

Driver

RF power FET

Final

clamped

RF FET

Driver

clamped

RF FET

Final

clamped

RF FET

Final

RF power FET

Driver

RF power FET

Final

RF power FET

RF out

10 pF

ATC600F

2.7 pF

ATC600F

100 pF

ATC600F

10 μF

50 V

10 μF

50 V

10 μF

6.3 V

10 μF

6.3 V

10 μF

6.3 V

10 μF

6.3 V

10 μF

50 V

ferrite

5.1 pF

ATC600F

5.1 pF

ATC600F

10 μF

50 V

100 pF

ATC600F

ferrite

1.2 kΩ

1.3 kΩ

Product data sheet Rev. 5 — 28 September 2018 8 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

8.1 Possible circuit topologies

Fig 5. Dual section or single ended

Fig 6. Doherty

Fig 7. Quadrature combined

amp00514

-3 dB / Φ-0°

In A

In B -3 dB / Φ-0°

Out A

Out

Out B

amp00603

-3 dB / Φ-0°

-3 dB / Φ-90°

Combiner

Out

Splitter

λ/4 λ/4

amp00515

-3 dB / Φ-0°

-3 dB / Φ-90°

3 dB Coupler

Out

3 dB Coupler

Product data sheet Rev. 5 — 28 September 2018 9 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

8.2 Ruggedness in class-AB operation

The BLM8G0710S-30PB and BLM8G0710S-30PBG are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

conditions: VDS = 32 V; IDq1 = 40 mA; IDq2 = 120 mA; Pi = 13 dBm, Pi is measured at CW

and corresponding to PL(3dB) under ZS = 50 ; f = 840 MHz.

Fig 8. Push-pull

amp00516

-3 dB / Φ-0°

-3 dB / Φ-180°

Combiner

Out

Splitter

λ/2 λ/2

Product data sheet Rev. 5 — 28 September 2018 10 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

8.3 Impedance information

Table 9. Typical impedance tuned for maximum output power

Measured load-pull data per section; test signal: pulsed CW; Tcase = 25 °C; VDS = 28 V; IDq1 = 30 mA; IDq2 = 120 mA;

tp = 100 μs; δ = 10 %; ZS = 50 Ω. Typical values unless otherwise specified.

at 1dB gain compression point at 3dB gain compression point

f ZLGp(max) PLηadd AM-PM

conversion

ZLGp(max) PLηadd AM-PM

conversion

(MHz) (Ω) (dB) (dBm) (%) (deg) (Ω) (dB) (dBm) (%) (deg)

BLM8G0710S-30PB

680 6.1 + j5.1 34.2 44 56.2 7.3 6.4 + j4.3 34 44.9 59.4 9.2

700 5.6 + j4.6 34 43.9 53.3 6.8 6.2 + j3.6 33.9 44.8 56.4 8.5

720 6.1 + j5.2 34.5 43.8 56.7 6.4 6.2 + j3.7 34 44.8 56.8 8

740 5.7 + j4.6 34.1 43.8 53.7 5.3 6.3 + j3.6 33.9 44.8 57.2 7.2

760 5.7 + j4.5 34 43.8 54.6 4.4 6.3 + j3.5 33.8 44.8 57.4 6.1

780 6.2 + j3.5 33.6 43.8 53.4 3.6 6.2 + j3.5 33.6 44.8 57.7 6.2

800 7.0 + j3.3 33.7 43.9 55.6 2.6 6.2 + j2.8 33.4 44.9 56.3 5

820 6.3 + j2.9 33.3 43.9 52.7 3 6.3 + j2.9 33.3 44.8 56.8 5.7

840 6.3 + j2.8 33.2 43.9 53.3 2.1 6.8 + j2.2 33.1 44.9 56.5 4.1

860 7.0 + j3.2 33.5 43.8 56 2.2 7.4 + j1.7 33.1 44.8 56.2 4

880 6.7 + j2.1 33.1 43.8 52 1.3 7.4 + j1.7 33.1 44.8 56.2 3.3

900 7.4 + j1.8 33.2 43.9 53.4 1.2 7.2 + j0.9 32.9 44.8 54.3 3.4

920 6.8 + j2.2 33.3 43.8 53.1 1 7.3 + j0.9 32.9 44.7 54.2 2.7

940 7.5 + j1.7 33.4 43.8 53.1 0.5 8.1 + j0.7 33.2 44.7 55.2 2

960 7.2 + j0.9 33.2 43.6 49.7 0.2 7.2 + j0.9 33.2 44.6 53.4 2.4

980 6.5 + j1.3 33.2 43.7 49.7 0.3 8.0 + j0.8 33.4 44.7 55.1 2

1000 8.1 + j0.9 33.4 43.6 51.4 0.3 8.1 + j0.9 33.4 44.6 55.1 2.2

BLM8G0710S-30PBG

700 5.7 + j4.6 34.7 43.5 53.5 7.3 6.4 + j3.1 34.4 44.4 55.3 8.8

720 5.8 + j3.8 34.6 43.5 52.1 6 6.3 + j3.4 34.6 44.4 56.6 8.3

740 5.6 + j3.8 34.5 43.5 51.7 6.2 6.5 + j2.6 34.4 44.5 55.5 7.6

760 6.1 + j3.2 34.3 43.5 52.5 5 7.4 + j1.8 34.2 44.5 55.9 6

780 5.7 + j2.7 33.8 43.5 50.1 4.1 6.5 + j1.6 33.6 44.5 53.1 5.5

800 6.4 + j2.2 33.7 43.7 52.7 3.1 7.1 + j1.3 33.6 44.7 55.7 4.8

820 6.8 + j2.4 33.8 43.7 54.3 2.6 6.4 + j1.2 33.3 44.7 54.2 4.8

840 7.0 + j0.8 33.3 43.7 51.2 2.3 7.0 + j0.8 33.3 44.7 55 4.7

860 6.8 + j1.9 33.6 43.6 53.2 2.5 7.5 + j0.5 33.3 44.6 54.7 4.4

880 6.6 + j1.3 33.5 43.5 50.8 2 7.4 + j0.7 33.4 44.5 54.6 4.3

900 7.1 + j1.3 33.7 43.4 51.6 1.2 8.2 + j0.3 33.6 44.4 54.8 2.9

920 7.4 + j0.0 33.4 43.4 49.4 0.7 7.4 + j0.1 33.4 44.5 53.8 2.8

940 8.0  j0.2 33.4 43.3 49.3 0.2 8.0 + j0.1 33.5 44.4 53.9 2.4

960 7.8 + j0.7 34 43.3 51.1 0.1 7.9  j0.6 33.5 44.3 52.4 2

980 7.7  j0.5 33.7 43.3 48.6 0.5 7.7  j0.5 33.7 44.4 53 1.6

1000 7.2  j0.4 33.5 43.3 48.4 0.1 7.2  j0.4 33.5 44.3 52.7 2.3

Product data sheet Rev. 5 — 28 September 2018 11 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

Table 10. Typical impedance tuned for maximum power added efficiency

Measured load-pull data per section; test signal: pulsed CW; Tcase = 25 °C; VDS = 28 V; IDq1 = 30 mA; IDq2 = 120 mA;

tp = 100 μs; δ = 10 %; ZS = 50 Ω. Typical values unless otherwise specified.

at 1dB gain compression point at 3dB gain compression point

f ZLGp(max) PLηadd AM-PM

conversion

ZLGp(max) PLηadd AM-PM

conversion

(MHz) (Ω) (dB) (dBm) (%) (deg) (Ω) (dB) (dBm) (%) (deg)

BLM8G0710S-30PB

680 9.6 + j9.3 35.5 42.6 65.9 8.9 9.3 + j8.4 35.3 43.6 68.1 11.1

700 8.7 + j9.5 35.6 42.5 65.4 9 9.2 + j8.5 35.5 43.5 67.3 10.7

720 8.8 + j9.6 35.7 42.3 64.5 8 8.8 + j9.6 35.7 43 67 11

740 8.0 + j9.5 35.6 42.3 64.2 7.3 8.5 + j8.7 35.4 43.3 66.7 9.7

760 8.9 + j9.4 35.5 42.3 64.5 5.5 9.4 + j8.4 35.3 43.3 66.7 7.3

780 8.4 + j8.5 35.1 42.5 63.8 5 8.4 + j8.5 35.1 43.2 66.1 8.2

800 8.4 + j8.6 35.1 42.4 63.5 4.2 9.2 + j8.5 35.1 43.2 65.4 6.1

820 8.4 + j8.7 34.9 42.3 62.7 4.1 8.7 + j6.8 34.6 43.7 65.1 6.3

840 8.5 + j8.6 34.9 42.3 63 3.1 7.9 + j6.9 34.6 43.7 65.1 6.2

860 8.5 + j8.5 34.8 42.2 62.1 2.9 7.9 + j6.8 34.5 43.7 64.5 6.2

880 7.6 + j8.5 34.8 42.1 61.8 3 7.8 + j6.8 34.5 43.6 64 5.3

900 8.0 + j7.7 34.7 42.4 61.9 2.3 7.8 + j6.8 34.6 43.5 63.8 5.2

920 8.7 + j6.8 34.6 42.7 61.2 1 8.1 + j7.8 34.8 43.1 63.1 3.9

940 8.2 + j7.7 34.9 42.2 60.6 1.3 8.3 + j5.9 34.6 43.7 62.4 2.8

960 7.9 + j6.8 34.9 42.4 59.3 1.1 8.7 + j6.7 34.8 43.3 61.8 1.9

980 7.5 + j8.5 35.2 41.7 59.8 1 8.6 + j6.8 34.8 43.3 62.1 1.5

1000 8.0 + j7.8 35 41.9 59.1 0.2 7.1 + j6.8 34.9 43.1 61.6 3.2

BLM8G0710S-30PBG

700 8.4 + j8.2 36 42.3 63.4 9 8.5 + j8.5 36.1 42.9 65.8 12.7

720 8.6 + j9.1 36.2 41.9 63.9 8.1 8.9 + j8.8 36.1 42.8 66.8 11

740 8.3 + j8.2 36 42.2 62.6 7.6 8.3 + j8.2 36 42.9 65.4 10.9

760 9.6 + j7.7 35.7 42.2 62.2 5.4 8.8 + j8.7 35.9 42.6 65.1 9.2

780 8.5 + j7.1 35.4 42.4 61.5 5.1 7.3 + j8.1 35.5 42.7 64.2 10.2

800 8.0 + j8.3 35.5 41.8 62.1 4.8 7.1 + j8.0 35.5 42.8 64.9 9.7

820 8.0 + j7.1 35.1 42.3 61.6 4 8.3 + j8.2 35.3 42.6 64 6.9

840 8.8 + j7.2 35.1 42.1 61.4 3.4 8.1 + j8.1 35.3 42.5 63.5 7

860 8.4 + j7.1 35.1 42.1 60.9 3.3 8.4 + j7.1 35.1 42.9 63.4 6

880 8.1 + j6.4 35.1 42.2 60.1 2.9 8.2 + j7.4 35.3 42.7 62.3 6

900 7.3 + j6.2 35.2 42.1 59.5 2.8 8.0 + j7.2 35.4 42.6 62.1 4.9

920 8.0 + j7.4 35.4 41.6 59.5 2.1 7.3 + j6.3 35.3 42.9 61.8 5.4

940 8.1 + j6.6 35.3 41.8 58.7 1.5 6.8 + j6.5 35.4 42.6 60.9 5.7

960 9.5 + j5.4 35.2 42.2 57.8 0 7.0 + j6.9 35.8 42.4 60.5 4.2

980 8.1 + j6.5 35.4 41.7 58.1 0.3 7.1 + j6.3 35.5 42.6 61.3 3

1000 6.9 + j4.9 35 42.2 58.2 1.1 7.0 + j6.0 35.2 42.7 61.1 3.2

Product data sheet Rev. 5 — 28 September 2018 12 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

8.4 Graphs

Tcase = 25 C; VDS = 28 V; IDq1 = 30 mA; IDq2 = 120 mA;

PL = 0.25 W. Per section.

(1) magnitude of Gp

(2) magnitude of RLin

Tcase = 25 C; VDS = 28 V; IDq1 = 30 mA; IDq2 = 120 mA;

PL = 0.25 W. Per section.

(1) magnitude of Gp

(2) magnitude of RLin

Fig 9. Wideband power gain and input return loss as

function of frequency; typical values

Fig 10. In-band power gain and input return loss as

function of frequency; typical values

Tcase = 25 C; VDS = 28 V; IDq1 = 30 mA; IDq2 = 120 mA.

Per section.

(1) f = 700 MHz

(2) f = 800 MHz

(3) f = 900 MHz

(4) f = 1000 MHz

Normalized at PL = 26 dBm; Tcase = 25 C; VDS = 28 V;

IDq1 = 30 mA; IDq2 = 120 mA. Per section.

(1) f = 700 MHz

(2) f = 800 MHz

(3) f = 900 MHz

(4) f = 1000 MHz

Fig 11. Power gain and drain efficiency as function of

output power; typical values

Fig 12. Normalized phase response as a function of

output power; typical values

aaa-015424

200 400 600 800 1000 1200

0 -40

10 -30

20 -20

30 -10

40 0

f (MHz)

(dB)

RLin

(dB)

(1)

(2)

aaa-015425

700 750 800 850 900 950 1000

30 -40

32 -30

34 -20

36 -10

38 0

f (MHz)

(dB)

RLin

(dB)

(1)

(2)

aaa-015426

25 30 35 40 45 50

32 0

34 20

36 40

38 60

40 80

PL (dBm)

(dB)

ηD

(%)

(1)

(2)

(3)

(4)

(1)

(2)

(3)

(4)

ηD

aaa-015427

25 30 35 40 45 50

-10

-7.5

-5

-2.5

2.5

PL (dBm)

____ φ

s21

/φ

s21(norm)

φs21/φs21(norm)

(deg)

(1)

(2)

(3)

(4)

Product data sheet Rev. 5 — 28 September 2018 13 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

Tcase = 25 C; VDS = 28 V; IDq1 = 30 mA; IDq2 = 120 mA; f = 881 MHz; 2-tone CW; PL = 8 W. Per section.

(1) IMD low

(2) IMD high

Fig 13. Intermodulation distortion as a function of tone spacing; typical values

Tcase = 25 C; VDS = 28 V; IDq1 = 30 mA; IDq2 = 120 mA;

f = 900 MHz; 1-carrier W-CDMA; test model 1;

PAR = 9.9 dB at 0.01 % probability on CCDF. Per

section.

Tcase = 25 C; VDS = 28 V; IDq1 = 30 mA; IDq2 = 120 mA;

measured on evaluation board.

Fig 14. Adjacent channel power ratio and drain

efficiency as function of output power;

typical values

Fig 15. Isolation as a function of frequency;

typical values

aaa-015428

1 10 102103

-90

-70

-50

-30

-10

tone spacing (MHz)

IMD

(dBc)

(1)

(2)

(1)

(2)

(1)

(2)

IMD3

IMD5

IMD7

aaa-015429

25 30 35 40 45

-70 0

-60 10

-50 20

-40 30

-30 40

PL (dBm)

ACPR

(dB)

ηD

(%)

ACPR

ACPR5M

ACPR

10M

ACPR10M

ηD

aaa-015430

500 600 700 800 900 1000 1100 1200

f (MHz)

12|2

|s12|2

(dB)

Product data sheet Rev. 5 — 28 September 2018 14 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

9. Package outline

Fig 16. Package outline SOT1211-3 (sheet 1 of 2)

SOT1211-3

Package outline drawing: Revision:

Sheet 1 of 2

Revision date: 7/26/2018

Tolerances unless otherwise stated:

Dimension: B 0.05 Angle: B 1°

Third angle projection

SOT1211-3

units in mm.

114

(18.01)

(15.44)

Min. 5.5

Min. 7.8

20.57

20.75(1)

R0.32

R1.00

pin 17 (6)

metal protrusion 4x

(ground) in corners (2)

9.78

0.10

1.57 (5)

0.22

0.05

9.96(1)

0.05 A

(2.15)

1.00 (12x)

1.50

0.35 (14x) (3)

16.00

2.00 0.1

0.25 B

0.10 (4)

3.92 -0.03

0.08

0.05 B

0.20( ) molding compound around

the perimeter of the heatsink

Min. 18.5

Min. 15.5

7.45

5.50 (3)

15.96

0.20

R0.16 max.

R1.38

(0.75)

R0.60(4x)

(7.04)

(4.47)

0.25 B

Product data sheet Rev. 5 — 28 September 2018 15 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

Fig 17. Package outline SOT1211-3 (sheet 2 of 2)

DETAIL B

SCALE 50:1

DETAIL A

SCALE 25:1

SOT1211-3

Package outline drawing: Revision:

Sheet 2 of 2

Revision date: 7/26/2018

Tolerances unless otherwise stated:

Dimension: B 0.05 Angle: B 1°

Third angle projection

SOT1211-3

units in mm.

Drawing Notes

Items Description

(1)

Dimensions are excluding mold protrusion. Areas located adjacent to the leads have a maximum mold protrusion of 0.25

mm (per side) and 0.62 mm max. in length. In between the 14 leads the protrusion is 0.25 mm. max. At all other areas the

mold protrusion is maximum 0.15 mm per side. See also detail B.

(2) The metal protrusion (tie bars) in the corner will not stick out of the molding compound protrusions (detail A).

(3) The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location.

(4) The lead coplanarity over all leads is 0.1 mm maximum.

(5) Dimension is measured 0.5 mm from the edge of the top package body.

(6) The hatched area indicates the exposed metal heatsink.

(7) The leads and exposed heatsink are plated with matte Tin (Sn).

lead dambar

location

(

)

(

)

location of metal protrusion (2)

(

)

(

)

Product data sheet Rev. 5 — 28 September 2018 16 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

Fig 18. Package outline SOT1212-3 (sheet 1 of 2)

DETAIL C

SCALE 25:1

SOT1212-3

Package outline drawing: Revision:

Sheet 1 of 2

Revision date: 7/26/2018

Tolerances unless otherwise stated:

Dimension: B 0.05 Angle: B 1°

Third angle projection

SOT1212-3

units in mm.

114

(18.01)

(15.44)

7.45

P2 0.1Z

(4.47)

(7.04)

metal protrusion 4x

(ground) in corners (2)

9.96(1)

L0.05 A

0.22

0.05

9.78

(0.75)

(2.15)

0.10

0.00 -0.02

0.06+ (6)

3.0°

-3°

4°

20.75 (1)

3.92

-.03

.08

R0.32

20.57

pin 17 (4)

Min. 15.5

Min. 18.5

0.20( ) compound rim all around the

perimeter of the heatsink

R0.60 (4x)

Min. 5.5

Min. 7.8

L0.05 B

5.5 (3)

L0.25 B

1.5

L0.25 B

0.35 (14x) (3)

1 (12x)

0.35 (7)

Seating plane

0.95

0.15

Gage plane

R1.38

13.2

.30

R0.16 max.

Product data sheet Rev. 5 — 28 September 2018 17 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

Fig 19. Package outline SOT1212-3 (sheet 2 of 2)

DETAIL A

SCALE 25:1

DETAIL B

SCALE 50:1

SOT1212-3

Package outline drawing: Revision:

Sheet 2 of 2

Revision date: 7/26/2018

Tolerances unless otherwise stated:

Dimension: B 0.05 Angle: B 1°

Third angle projection

SOT1212-3

units in mm.

Drawing Notes

Items Description

(1)

Dimensions are excluding mold protrusion. Areas located adjacent to the leads have a maximum mold protrusion of 0.25

mm (per side) and 0.62 mm max. in length. In between the 14 leads the protrusion is 0.25 mm max. At all other areas the

mold protrusion is maximum 0.15 mm per side. See also detail B.

(2) The metal protrusion (tie bars) in the corner will not stick out of the molding compound protrusions (detail A).

(3) The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location.

(4) The hatched area indicated the exposed heatsink.

(5) The leads and exposed heatsink are plated with matte Tin (Sn).

(6)

Dimension is measured with respect to the bottom of the heatsink Datum H. Positive value means that the bottom of the

heatsink is higher than the bottom of the lead.

(7) Gage plane (foot length) to be measured from the seating plane.

location of metal protrusion (2)

(

)

lead dambar

location

(

)

(

)

Product data sheet Rev. 5 — 28 September 2018 18 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

10. Handling information

[1] CDM classification C1 is granted to any part that passes after exposure to an ESD pulse of 250 V.

[2] HBM classification 1A is granted to any part that passes after exposure to an ESD pulse of 250 V.

11. Abbreviations

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 11. ESD sensitivity

ESD model Class

Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C1 [1]

Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 1A [2]

Table 12. Abbreviations

Acronym Description

AM Amplitude Modulation

3GPP 3rd Generation Partnership Project

CCDF Complementary Cumulative Distribution Function

CW Continuous Wave

DPCH Dedicated Physical CHannel

ESD ElectroStatic Discharge

GEN8 Eighth Generation

LDMOS Laterally Diffused Metal Oxide Semiconductor

MMIC Monolithic Microwave Integrated Circuit

MTF Median Time to Failure

PAR Peak-to-Average Ratio

PM Phase Modulation

RoHS Restriction of Hazardous Substances

VSWR Voltage Standing-Wave Ratio

W-CDMA Wideband Code Division Multiple Access

Product data sheet Rev. 5 — 28 September 2018 19 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

12. Revision history

Table 13. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLM8G0710S-30PB_S-30PBG v.5 20180928 Product data sheet BLM8G0710S-30PB_

S-30PBG v.4

Modifications •Section 9 on page 14: package outline versions updated

BLM8G0710S-30PB_S-30PBG v.4 20180209 Product data sheet BLM8G0710S-30PB_

S-30PBG v.3

BLM8G0710S-30PB_S-30PBG v.3 20150901 Product data sheet BLM8G0710S-30PB_

S-30PBG v.2

BLM8G0710S-30PB_S-30PBG v.2 20150701 Product data sheet - BLM8G0710S-30PB_

S-30PBG v.1

BLM8G0710S-30PB_S-30PBG v.1 20150123 Product data sheet - -

Product data sheet Rev. 5 — 28 September 2018 20 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.ampleon.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Ampleon does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Ampleon sales office. In

case of any inconsistency or conflict with the short data sheet, the full data

sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Ampleon and its customer, unless Ampleon and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be valid

in which the Ampleon product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Ampleon does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. Ampleon takes no responsibility for

the content in this document if provided by an information source outside of

Ampleon.

In no event shall Ampleon be liable for any indirect, incidental, punitive,

special or consequential damages (including - without limitation - lost profits,

lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Ampleon’s aggregate and cumulative liability towards customer

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Ampleon.

Right to make changes — Ampleon reserves the right to make changes to

information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

publication hereof.

Suitability for use — Ampleon products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction of an

Ampleon product can reasonably be expected to result in personal injury,

death or severe property or environmental damage. Ampleon and its

suppliers accept no liability for inclusion and/or use of Ampleon products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Ampleon makes no representation

or warranty that such applications will be suitable for the specified use without

further testing or modification.

Customers are responsible for the design and operation of their applications

and products using Ampleon products, and Ampleon accepts no liability for

any assistance with applications or customer product design. It is customer’s

sole responsibility to determine whether the Ampleon product is suitable and

fit for the customer’s applications and products planned, as well as for the

planned application and use of customer’s third party customer(s). Customers

should provide appropriate design and operating safeguards to minimize the

risks associated with their applications and products.

Ampleon does not accept any liability related to any default, damage, costs or

problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Ampleon products in order to

avoid a default of the applications and the products or of the application or

use by customer’s third party customer(s). Ampleon does not accept any

liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Ampleon products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.ampleon.com/terms, unless otherwise agreed in a valid written

individual agreement. In case an individual agreement is concluded only the

terms and conditions of the respective agreement shall apply. Ampleon

hereby expressly objects to applying the customer’s general terms and

conditions with regard to the purchase of Ampleon products by customer.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 5 — 28 September 2018 21 of 22

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Ampleon product is automotive qualified, the product

is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Ampleon

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without Ampleon’s warranty of the product for such

automotive applications, use and specifications, and (b) whenever customer

uses the product for automotive applications beyond Ampleon’s specifications

such use shall be solely at customer’s own risk, and (c) customer fully

indemnifies Ampleon for any liability, damages or failed product claims

resulting from customer design and use of the product for automotive

applications beyond Ampleon’s standard warranty and Ampleon’s product

specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Any reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own

trademarks.

14. Contact information

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

BLM8G0710S-30PB(G)

LDMOS 2-stage power MMIC

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

Date of release: 28 September 2018

Document identifier: BLM8G0710S-30PB_S-30PBG

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2

2.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3

4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Application information. . . . . . . . . . . . . . . . . . . 5

8.1 Possible circuit topologies . . . . . . . . . . . . . . . . 8

8.2 Ruggedness in class-AB operation. . . . . . . . . . 9

8.3 Impedance information . . . . . . . . . . . . . . . . . . 10

8.4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14

10 Handling information. . . . . . . . . . . . . . . . . . . . 18

11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 18

12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 19

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 20

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21

14 Contact information. . . . . . . . . . . . . . . . . . . . . 21

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22