NDS9948 - Fairchild - Datasheet.Support

2010 Fairc hild Semiconduct or Cor por ation NDS9948 Rev B1(W)

NDS9948

Dual 60V P-Channel PowerTrench



 MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applicat i ons requiring a wide range of gate drive voltage

ratings (4.5V – 20V).

Applications

• Power managem ent

• Load switch

• Battery protection

Features

• –2.3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V

RDS(ON) = 500 m Ω @ V GS = –4.5 V

• Low gate charge (9nC typical )

• Fast switching speed

• High performance trench technology for extrem el y

low RDS(ON)

• High power and current handling capability

SO-8

D2 D2 D1 D1

S2G2S1G1

Pin 1

SO-8

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source V ol tage –60 V

VGSS Gate-Source Voltage ±20 V

ID Drain Current – Continuous (Note 1a) –2.3 A

– Pulsed –10

Power Dissipation for Dual Operation 2

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1.0

(Note 1c) 0.9

TJ, TSTG Operating and St orage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

(Note 1c) 135 °C/W

RθJC Thermal Resi stance, Junction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marki ng Device Reel Siz e Tape width Quantity

NDS9948 NDS9948 13’’ 12mm 2500 units

NDS9948

January 2010

http://store.iiic.cc/

NDS9948 Rev B1(W)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

WDSS Drain-Source A val anche Energy Si ngl e P ulse, VDD=–54 V 15 mJ

IAR Drain-Source Avalanche Current

Off Characteristics

BVDSS Drain–Sourc e Breakdown Voltage VGS = 0 V, ID = –250 µA –60 V

∆BVDSS

∆TJ Breakdown Voltage Temperature

Coefficient ID = –250 µA, Referenced to25°C

–52

mV/°C

IDSS

Zero Gate Volt age Drai n Current

VDS = –40 V, VGS = 0 V

VDS = –40 V,VGS = 0 V TJ =–55°C

–2

–25 µA

IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

On Characteristics (Note 2)

VGS(th) Gate Threshold V ol t age VDS = VGS, ID = –250 µA –1 –1.5 –3 V

∆VGS(th)

∆TJ Gate Threshold Vol tage

Temperature Coefficient ID = –250 µA, Referenced to25°C

mV/°C

RDS(on) Static Drain–Source

On–Resistance VGS = –10 V, ID = –2.3 A

VGS = –4.5 V, ID = –1.6 A

VGS = –10 V,ID = –2.3A , T J =125°C

138

175

225

250

500

433

mΩ

ID(on) On–State Drai n Current VGS = –10 V, VDS = –5 V –10 A

gFS Forward Transconductance VDS = –10 V, ID = –2.3 A 5 S

Dynamic Characteristics

Ciss Input Capacitance 394 pF

Coss Output Capacitance 53 pF

Crss Reverse Transfer Capacitance

VDS = –30 V, V GS = 0 V,

f = 1.0 MHz 23 pF

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time 6 12 ns

tr Turn–On Rise Time 9 18 ns

td(off) Turn–Off Delay Time 16 29 ns

tf Turn–Off Fall Time

VDD = –30 V, ID = –1 A,

VGS = –10 V, RGEN = 6 Ω

3 6 ns

Qg Total Gate Charge 9 13 nC

Qgs Gate–Source Charge 1.4 nC

Qgd Gate–Drain Charge

VDS = –30 V, ID = –2.3 A,

VGS = –10 V

1.7 nC

NDS9948

–10

http://store.iiic.cc/

NDS9948 Rev B1(W)

Electrical Characteristics (cont.) TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Cont i nuous Drain–Source Diode Forward Current –1. 7 A

VSD

Drain–Source Di ode Forward

Voltage VGS = 0 V, IS = –1.7 A(Note 2)

–0.8

–1.2

trr

Reverse Recovery T i me

VGS = 0 V, IF = –2.3A,

dIF/dt = 100A /µs 25

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. `

a) 78°C/W when

mounted on a

0.5in2 pad of 2

oz copper

b) 125°C/W when

mounted on a

0.02 in2 pad of

2 oz copper

c) 135°C/W when

mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Wi dth < 300µs, Duty Cycle < 2.0%

NDS9948

http://store.iiic.cc/

NDS9948 Rev B1(W)

Typical Characteristics

0123456

-VDS, DRAIN TO SOURCE VOLTAGE (V)

-I

, DRAIN CURRENT (A)

VGS = -10V

-3.0V

-3.5V

-4.0V

-4.5V

-6.0V

0.8

1.2

1.4

1.6

1.8

0246810

-ID, DRAIN CURRENT (A)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

VGS=-3.5V

-4.0V

-6.0V

-10V

-4.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.4

0.6

0.8

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

ID = -2.3A

VGS = -10V

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

246810

-VGS, GATE TO SOURCE VOLTAGE (V)

DS(ON)

, ON-RESISTANCE (OHM)

ID = -1A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation

withTemperature. Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

11.522.533.54

-VGS, GATE TO SOURCE VOLTAGE (V)

-I

, DRAIN CURRENT (A)

TA = -55oC25oC

125oC

VDS = -5V

0.0001

0.001

0.01

0.1

100

0 0.2 0.4 0.6 0.8 1 1.2

-VSD, BODY DIOD E FORWARD VOLTAGE (V)

-I

, REVERSE DRAIN CURRENT (A)

VGS =0V

TA = 125oC

25oC

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

NDS9948

http://store.iiic.cc/

NDS9948 Rev B1(W)

Typical Characteristics

0246810

Qg, GATE CHARGE (nC)

-V

, GATE-SOURCE VOLTAGE (V)

ID = -2.3AVDS = -20V -30V

-40V

100

200

300

400

500

600

0 102030405060

-VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

CISS

COSS

CRSS

f = 1 MHz

VGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

100

0.1 1 10 100

-VDS, DRAIN-SOURCE VOLTAGE (V)

-I

, DRAIN CURRENT (A)

100ms

100µ

RDS(ON) LIMIT

VGS = -10V

SINGLE PULSE

RθJA = 135oC/W

TA = 25oC

10ms

1ms

10s

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

RθJA = 135°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

r(t), NORM ALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

RθJA(t) = r(t) * RθJA

RθJA = 135oC/W

TJ - TA = P * RθJA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

NDS9948

http://store.iiic.cc/

TRADEMARKS

The following includes registe red and unregistere d trademarks and service marks, owned by Fairchild Semicond uctor and/or its g lobal subsidiaries, and i s not

intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporat ion, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCH ILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surg ical i mplant into the body or (b) su pport or sustai n li fe,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reaso nably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

AccuPower™

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

DEUXPEED®

Dual Cool™

EcoSPARK®

EfficentMax™

EZSWITCH™*

™*

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FETBench™

FlashWriter® *

FPS™

F-PFS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MicroPak2™

MillerDrive™

MotionMax™

Motion-SPM™

OptiHiT™

OPTOLOGIC®

OPTOPLANAR®

PDP SPM™

Power-SPM™

PowerTrench®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

Saving our world, 1mW/W/kW at a time™

SignalWise™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Sync-Lock™

®*

The Power Franchise®

TinyBoost™

TinyBuck™

TinyCalc™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TriFault Detect™

TRUECURRENT™*

μSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

No Identificatio n Ne eded Full Product ion Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the desig n.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLIC Y

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manuf actures of semiconductor products are experien cing counterfeiting of th eir

parts. Customers who ina dvert ently pur ch ase cou nterfe it par ts e xperi en ce many prob lems such a s loss of b rand rep utati on, subst a ndard p erf ormance , fa iled

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to prot ect oursel ves and our customers from the

proliferation of counterfeit parts. Fairch ild strongly encou rages cust omers to purch ase Fairch ild parts either direct ly from Fairchild or from Authorized Fai rchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild ’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to comb at this global pr oblem and encourag e our customer s to do thei r part in stopping this practice by buying direct or from aut horized distributors.

Rev. I46

™

http://store.iiic.cc/