
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC184
BC184B
BC184C
TO-92
Plastic Package
Am
lifier Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNITS
Collector -Emitter Voltage VCEO 30 V
Collector -Base Voltage VCBO 45 V
Emitter -Base Voltage VEBO 6V
Collector Current Continuous IC100 mA
Power Dissipation @ Ta=25ºC PD350 mW
Derate Above 25ºC 2.8 mW/ºC
Power Dissipation @ Tc=25ºC PD1W
Derate Above 25ºC 8 mW/ºC
Operating And Storage Junction Tj, Tstg -55 to +150 ºC
Temperature Range
THERMAL RESISTANCE
Junction to ambient Rth(j-a) 357 ºC/W
Junction to case Rth(j-c) 125 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS
Collector -Emitter Voltage VCEO IC=2mA,IB=0 30 V
Collector -Base Voltage VCBO IC=10µA.IE=0 45 V
Emitter-Base Voltage VEBO IE=100µA, IC=0 6V
Collector-Cut off Current ICBO VCB=30V,IE=0 0.2 15 nA
Emitter-Cut off Current IEBO VEB=4V, IC=0 15 nA
DC Current Gain hFE IC=10µA,VCE=5V 100
BC184 IC=2mA,VCE=5V 240 800
IC=100mA*,VCE=5V 130
Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=0.5mA 0.07 0.25 V
IC=100mA,IB=5.0mA* 0.2 0.6 V
Base Emitter Saturation Voltage VBE(Sat) IC=100mA,IB=5mA* 1.2 V
Base Emitter On Voltage VBE(ON) IC=2mA,VCE=5V 0.55 0.62 0.7 V
IC=100µA,VCE=5V 0.5 V
IC=100mA,VCE=5V* 0.83 V
IS /I SO 9 0 02
Lic#
SC/L- 000019.2
Continental Device India Limited Data Sheet Page 1 of 4