Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 2 1Publication Order Number:
MMBT2222ATT1/D
MMBT2222ATT1
Preferred Device
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 package which
is designed for low power surface mount applications.
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 40 Vdc
Collector−Base Voltage VCBO 75 Vdc
Emitter−Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
TA = 25°CPD150 mW
Thermal Resistance,
Junction−to−Ambient RθJA 833 °C/W
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to
+150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
Device Package Shipping†
ORDERING INFORMATION
MMBT2222ATT1 SOT−416
CASE 463
SOT−416/SC−75
STYLE 1
3000 / Tape & Reel
MARKING DIAGRAM
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR
3
1
BASE
2
EMITTER
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†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1P M
1P = Specific Device Code
M = Date Code
1
MMBT2222ATT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 — Vdc
Collector−Base Breakdown Voltage
(IC = 10 Adc, IE = 0) V(BR)CBO 75 — Vdc
Emitter−Base Breakdown Voltage
(IE = 10 Adc, IC = 0) V(BR)EBO 6.0 — Vdc
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc) IBL — 20 nAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc) ICEX — 10 nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
HFE 35
50
75
100
40
—
—
—
—
—
—
Collector−Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat) —
—0.3
1.0
Vdc
Base−Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) 0.6
—1.2
2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT300 — MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 8.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 30 pF
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie 0.25 1.25 k ohms
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre — 4.0 X 10−4
Small−Signal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe 75 375 —
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe 25 200 mhos
Noise Figure
(VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) NF — 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc, td— 10
ns
Rise Time
(VCC
3
.
0
Vdc
,
VBE
0
.
5
Vdc
,
IC = 150 mAdc, IB1 = 15 mAdc) tr— 25 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts— 225
ns
Fall Time
(VCC
30
Vdc
,
IC
150
mAdc
,
IB1 = IB2 = 15 mAdc) tf— 60 ns
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
MMBT2222ATT1
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3
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
−2 V < 2 ns
0
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
1 kΩ
+30 V
200
CS* < 10 pF
+16 V
−14 V
0
< 20 ns
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
1 k
+30 V
200
CS* < 10 pF
−4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
hFE, DC CURRENT GAINVCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
TJ = 125°C
TJ = 25°C
25°C
−55°C
IC = 1.0 mA 10 mA 150 mA 500 mA
VCE = 1.0 V
VCE = 10 V
MMBT2222ATT1
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4
Figure 5. Turn−On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20 70
5.0
100
5.0 7.0 30 50 200
10
30
7.0
20
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn−Off Time
IC, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t′s = ts − 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20 50
0.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 Ω
500 µA, RS = 200 Ω
100 µA, RS = 2.0 kΩ
50 µA, RS = 4.0 kΩ
f = 1.0 kHz
IC = 50 µA
100 µA
500 µA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 50
0.2 0.3 0.5 0.7
Ccb
20
30
Ceb
Figure 10. Current−Gain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE = 20 V
TJ = 25°C
MMBT2222ATT1
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5
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V, VOLTAGE (VOLTS)
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
−0.5
0
+0.5
COEFFICIENT (mV/ C)
−1.0
−1.5
−2.5
°
RVC for VCE(sat)
RVB for VBE
0.1 1.0 2.0 5.0 10 20 50
0.2 0.5 100 200 500 1.0 k
1.0 V
−2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
MMBT2222ATT1
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6
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE C
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.70 0.90 0.028 0.035
B1.40 1.80 0.055 0.071
C0.60 0.90 0.024 0.035
D0.15 0.30 0.006 0.012
G1.00 BSC 0.039 BSC
H−−− 0.10 −−− 0.004
J0.10 0.25 0.004 0.010
K1.45 1.75 0.057 0.069
L0.10 0.20 0.004 0.008
S0.50 BSC 0.020 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) B
−A−
−B−
S
D
G
3 PL
0.20 (0.008) A
K
J
L
C
H
3
2
1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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MMBT2222ATT1/D
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