MMBT2222ATT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 600 mAdc Symbol Max Unit PD 150 mW RJA 833 C/W TJ, Tstg -55 to +150 C Rating Collector Current - Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25C Thermal Resistance, Junction-to-Ambient Operating and Storage Junction Temperature Range 3 2 1 CASE 463 SOT-416/SC-75 STYLE 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. MARKING DIAGRAM 1P M 1 1P M = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping MMBT2222ATT1 SOT-416 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 September, 2004 - Rev. 2 1 Publication Order Number: MMBT2222ATT1/D MMBT2222ATT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector -Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector -Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 75 -- Vdc Emitter -Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 -- Vdc Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) IBL -- 20 nAdc Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) ICEX -- 10 nAdc 35 50 75 100 40 -- -- -- -- -- -- -- 0.3 1.0 0.6 -- 1.2 2.0 fT 300 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 30 pF Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie 0.25 1.25 k ohms Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre -- 4.0 X 10- 4 Small -Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe 75 375 -- Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe 25 200 mhos Noise Figure (VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) NF -- 4.0 dB (VCC = 3.0 Vdc, VBE = - 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td -- 10 tr -- 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts -- 225 tf -- 60 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) HFE DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector -Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base -Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain -- Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 ns ns MMBT2222ATT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 s, DUTY CYCLE 2.0% +16 V 200 1.0 to 100 s, DUTY CYCLE 2.0% +16 V 0 0 -2 V 1 k < 2 ns 1k -14 V CS* < 10 pF 200 < 20 ns CS* < 10 pF 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time hFE , DC CURRENT GAIN 1000 700 500 TJ = 125C 300 200 25C 100 70 50 -55C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region http://onsemi.com 3 3.0 5.0 10 20 30 50 MMBT2222ATT1 200 500 IC/IB = 10 TJ = 25C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 ts = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn -On Time IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k 8.0 500 6.0 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 300 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE 4.0 2.0 IC = 50 A 100 A 500 A 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 0 50 50 100 20 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 7. Frequency Effects Figure 8. Source Resistance Effects f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) RS, SOURCE RESISTANCE (OHMS) 20 Ceb 10 7.0 5.0 Ccb 3.0 0.2 0.3 100 200 f, FREQUENCY (kHz) 30 CAPACITANCE (pF) 200 Figure 6. Turn -Off Time 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 300 t, TIME (ns) t, TIME (ns) 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 500 VCE = 20 V TJ = 25C 300 200 100 70 50 1.0 Figure 9. Capacitances 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current-Gain Bandwidth Product http://onsemi.com 4 MMBT2222ATT1 1.0 +0.5 TJ = 25C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) -2.5 500 1.0 k 0.1 0.2 Figure 11. "On" Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 5 500 MMBT2222ATT1 PACKAGE DIMENSIONS SC-75/SOT-416 CASE 463-01 ISSUE C -A- S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 D 3 PL 0.20 (0.008) G -B- 1 M B K J DIM A B C D G H J K L S 0.20 (0.008) A C L MILLIMETERS MIN MAX 0.70 0.90 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC --- 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.035 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC --- 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR H ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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