SILICON EPITAXIAL
NPN TRANSISTOR
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Semelab Limited
emelab Limitedemelab Limited
emelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8123
Issue 2
Page 1 of 3
BC109CSM
• Hermetic Ceramic Surface Mount Package
• Designed For Low Noise General Purpose Amplifiers,
Driver Stages and Signal Processing Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 30V
VCEO Collector – Emitter Voltage 20V
VEBO Emitter – Base Voltage 5V
IC Continuous Collector Current 100mA
ICM Peak Collector Current 200mA
PD Total Power Dissipation at TA = 25°C 300mW
Derate Above 25°C 2mW/°C
TC = 25°C 750mW
Derate Above 25°C 5mW/°C
TJ Junction Temperature Range -65 to +175°C
Tstg Storage Temperature Range -65 to +175°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJA Thermal Resistance, Junction To Ambient 500 °C/W
RθJC Thermal Resistance, Junction To Case 200 °C/W
SILICON EPITAXIAL
NPN TRANSISTOR
BC109CSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8123
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
VCB = 20V 15 nA
ICBO Collector-Cut-Off Current
TA = 150°C 15 µA
V(BR)CBO Collector-Base Breakdown
Voltage IC = 10µA 30
V(BR)CEO(1) Collector-Emitter
Breakdown Voltage IC = 10mA 20
V(BR)EBO Emitter-Base Breakdown
Voltage IE = 10µA 5
V
IC = 2mA VCE = 5V 550 700
VBE(1) Base-Emitter Voltage IC = 10mA VCE = 5V 700
IC = 10mA IB = 0.5mA 250
VCE(sat)(1) Collector-Emitter Saturation
Voltage IC = 100mA IB = 5mA 600
IC = 10mA IB = 0.5mA 750
VBE(sat)(1) Base-Emitter Saturation
Voltage IC = 100mA IB = 5mA 900
mV
hFE(1) IC = 2mA VCE = 5V 200 800
Forward-current transfer
ratio IC = 10µA VCE = 5V 40
DYNAMIC CHARACTERISTICS
IC = 10mA VCE = 5V
fT Transition Frequency
f = 100MHz
150 MHz
IC = 2mA VCE = 5V
hfe Small-Signal Current Gain f = 1.0KHz 240 900
VCB = 10V IE = 0
Cobo Output Capacitance f = 1.0MHz 6 pF
VEB = 0.5V IC = 0
Cibo Input Capacitance f = 1.0MHz 12 pF
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON EPITAXIAL
NPN TRANSISTOR
BC109CSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8123
Issue 2
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
LCC1
Underside View
Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector
2 1
0.51 ± 0.10
(0.02 ± 0.004) 0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012) rad.
rad.
A =
3
